A5023779923- Advanced Memory and Neural Computing
- Transition Metal Oxide Nanomaterials
- Ferroelectric and Negative Capacitance Devices
- Neuroscience and Neural Engineering
Tianjin University of Technology
2015-2017
Abstract SiO 2 is the most significantly used insulator layer in semiconductor devices. Its functionality was recently extended to resistance switching random access memory, where defective played an active role as (RS) layer. In this report, bias-polarity-dependent RS behaviours top electrode W-sputtered -bottom Pt (W/SiO /Pt) structure were examined based on current-voltage (I-V) sweep. When memory cell electroformed with a negative bias applied W electrode, showed typical electronic...
Reliability and uniformity in resistance switching behaviours top electrode Cu-sputtered TiO2-bottom Pt memory structure were greatly improved by inserting an interface layer of 5 nm-thick HfO2 between Cu 50 TiO2. The thin layer, with much smaller cluster size than TiO2, limited the migration appropriately induced more uniform conducting filament distribution. repeated rejuvenation rupture was within thereby improving reliability uniformity. This also decreased operation power compared to a...
Ta2O5 has been an appealing contender for the resistance switching random access memory (ReRAM). The (RS) in this material is induced by repeated formation and rupture of conducting filaments (CFs) oxide layer, which are accompanied almost inevitable randomness parameters. In work, a 1 to 2 nm-thick Ti layer was deposited on 10 RS greatly improved performances, including much-improved uniformity. metal naturally oxidized TiOx (x < 2) played role series resistor, whose value comparable...