A5040515064- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Ferroelectric and Negative Capacitance Devices
- MXene and MAX Phase Materials
- Silicon Carbide Semiconductor Technologies
- Nanowire Synthesis and Applications
- ZnO doping and properties
- Perovskite Materials and Applications
- 2D Materials and Applications
- Dendrimers and Hyperbranched Polymers
- Semiconductor Quantum Structures and Devices
- Electron and X-Ray Spectroscopy Techniques
- Radiation Effects in Electronics
- Integrated Circuits and Semiconductor Failure Analysis
- Supercapacitor Materials and Fabrication
- Advancements in Battery Materials
- Advanced Fiber Laser Technologies
- Electrospun Nanofibers in Biomedical Applications
- Semiconductor materials and interfaces
- Photocathodes and Microchannel Plates
- Anodic Oxide Films and Nanostructures
- Electronic and Structural Properties of Oxides
IBM (United States)
2020-2021
Yale University
2016-2020
Interface (United States)
2016
National University of Singapore
2014-2015
Recently, black phosphorus (BP) has joined the two-dimensional material family as a promising candidate for photonic applications due to its moderate bandgap, high carrier mobility, and compatibility with diverse range of substrates. Photodetectors are probably most explored BP devices, however, their unique potential compared other layered materials in mid-infrared wavelength not been revealed. Here, we demonstrate detectors at 3.39 μm internal gain, resulting an external responsivity 82...
Black phosphorus (BP) has recently attracted significant attention due to its exceptional physical properties. Currently, high-quality few-layer and thin-film BP are produced primarily by mechanical exfoliation, limiting their potential in future applications. Here, the synthesis of highly crystalline on 5 mm sapphire substrates conversion from red black at 700 °C 1.5 GPa is demonstrated. The synthesized ≈50 nm thick thin films polycrystalline with a crystal domain size ranging 40 70 µm...
Trapping characteristics of MOS structures with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> substrates and Al gate dielectrics are evaluated via constant-voltage stress X-ray irradiation. Traps that affect bias-induced charging located primarily in the...
Stacked Gate-All-Around (GAA) nanosheet pFETs with compressively strained Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> Ge xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> channel have been fabricated to explore their electrical benefits. The NS structure high crystalline quality and 1GPa compressive stress has realized for the first time. Systematic study performed understand effect of epitaxial thickness, fraction, cap...
Recent years have seen a boom in the interest of using alleged ferroelectric `negative capacitance' to realize low subthreshold swing MOSFETs. According "quasi-static negative (QSNC) theory, (FE) capacitor has an intrinsic but unstable (NC) region. By adding matching linear dielectric (DE) series, it is possible `stabilize' NC In this work, we examined validity QSNC and performed several key experiments verify that experimental results are consistent with our theoretical assessment....
The radiation hardness of AlGaN/GaN high-electron-mobility transistors (HEMTs) is found to improve with increasing GaN channel thickness. Epitaxial MgCaO shows promise as a radiation-tolerant gate dielectric, only small shifts in operating parameters metal–oxide–semiconductor HEMTs observed at doses up 1 Mrad(SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>2</i></sub> ). Bias-induced electron trapping and radiation-induced-hole can occur...
Thin film microbatteries require electrode materials with high areal specific capacities and good cyclability. Use of vapor-deposited silicon thin films as anodes in Li-ion offers the advantage capacity well compatibility other processes used for microsystem fabrication. Unfortunately, monolithic greater than 200 nm thickness pulverize during lithiation delithiation. We have metal-assisted-chemical-etching sputter-deposited amorphous to make nanoporous layers arrays nanopillars a means...
The band-alignment of atomic layer deposited (ALD)-HfO2/Al0.25Ga0.75N was studied by high resolution x-ray photoelectron spectroscopy measurements for both the non-passivated and SiH4 passivated AlGaN surfaces. valence band offset conduction ALD-HfO2/Al0.25Ga0.75N interface were found to be 0.43 eV 1.47 eV, respectively, sample, 0.59 1.31 SiH4-passivated sample. difference in alignment is dominated bending or shift substrate as a result different interlayers formed two surface preparations.
Total ionizing dose (TID) effects in ultra-thin body Ge on Insulator (GOI) junctionless CMOSFETs with recessed source/drain and channel have been studied. 10-keV X-ray irradiation leads to net hole trapping at the top bottom Ge/dielectric interfaces of both GOI NFETs PFETs. The thickness post-oxidation processing can strongly affect radiation response. Application negative back-gate bias moderate radiation-induced threshold-voltage shifts.
Abstract We have investigated the channel mobility in gated region of a set high-quality AlGaN/GaN high-electron-mobility transistors (HEMTs). The resistances contact, access, and regions were extracted from straightforward I D ( V G ) measurements on sets HEMTs with four different gate-to-drain distances. By correcting for effects contact access resistances, much more accurate effective curves region, compared to those reported past, been obtained. maximum that has found be 1100 cm 2 −1 s...
This work presents the results of our study Back-End-of-Line (BEOL)-processed Hf <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</inf> Zr O xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> (HZO)-based Metal-Ferroelectric-Metal (MFM) capacitors fabricated at temperatures never exceeding 400 <sup xmlns:xlink="http://www.w3.org/1999/xlink">0</sup> C, and over a wide range areas (10 xmlns:xlink="http://www.w3.org/1999/xlink">˗2</sup> to 10...
We report a thorough study of the negative bias temperature instability (NBTI) reliability in stacked gate-all-around (GAA) nanosheet (NS) devices with (100) and (110) top surfaces. demonstrated that NBTI stresses not only create more permanent defects than surface due to higher density Si-H bond but also induce recoverable damages. Finally, we show deteriorates at narrow sheet width NS is independent NS.
We report the fabrication and characterization of high voltage AlGaN/GaN metal–oxide–semiconductor high-electron mobility transistors (MOSHEMTs) with selectively regrown In0.14Ga0.86N contact using a CMOS compatible gold-free process. Device InGaN gate-to-drain spacing LGD 5 µm achieves an off-state breakdown VBR 800 V on-state resistance Ron 2 mΩ·cm2. The achieved in this work is higher than those GaN MOSHEMTs below 10 µm.
The band-alignment of atomic layer deposited (ALD)-HfO2/In0.18Al0.82N was studied by high resolution angle-resolved X-ray photoelectron spectroscopy measurements. band bending near the HfO2/In0.18Al0.82N interface investigated, and potential variation across taken into account in alignment calculation. It is observed that binding energies for N 1s Al 2p In0.18Al0.82N decreases corresponding extracted valence offsets increases with increasing θ (i.e., closer to interface), as a result an...
Various GaN channel thicknesses (0.5, 2.0, 3.5 and 6.3 μm) grown by metal organic vapor chemical deposition (MOCVD) on sapphire substrate were prepared to investigate the effects of thickness transistor characteristics. X-ray diffraction (XRD), pulsed ID(VD), as well gate stress DC measurements employed in this study. The results have revealed that charge trapping AlGaN/GaN hetero-structure is reduced performance improved increased up a certain value (TGaN_Channel = μm); More specifically,...
Epitaxially grown La-based oxide has shown promise as a gate dielectric for GaAs substrate materials with low interface trap density in the mid to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{11}$ </tex-math></inline-formula> cm notation="LaTeX">$^{\mathrm {-2}}$ eV {-1}}$ range. Total ionizing dose (TID) effects have been studied on MOSFETs Al <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>...
Horizontally stacked nanosheet gate-all-around devices enable area scaling of transistor technology, while providing improved electrostatic control over FinFETs for a wide range channel widths within single chip simultaneous low power applications and high-performance computing. Fabrication inner spacers Si channels is challenging, but essential to device performance, yield, reliability. We elucidate these challenges detail their impact the device. overcome with novel, highly selective,...
We have invented a novel channel mobility extraction method in the gated region of AlGaN/GaN high-electron-mobility transistors (HEMTs). The resistances contact, gated, and access were extracted from Id(Vg) measurements on set HEMTs with various gate-to-drain distances gate lengths. By considering impact contact resistances, an accurate model to describe behavior has been achieved. This employed for different GaN thickness devices study effect device performance. Our systematic revealed that...
For the first time, we demonstrate gate-all-around nanosheet based I/O transistors with a gate-last fabrication flow compatible logic using two different gate oxides: deposited oxide (DO) and selective (SO). The novel oxidation process enables thick formation by expanding space between silicon sheets (Tsus). Advanced surface treatment techniques are used to enhance drive current. Proper functioning of devices at starting Tsus 12nm has been achieved for both NFETs PFETs operation. flows...