A5065819162- Silicon and Solar Cell Technologies
- Semiconductor materials and interfaces
- Thin-Film Transistor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- solar cell performance optimization
- Silicon Nanostructures and Photoluminescence
- Nanowire Synthesis and Applications
- Photovoltaic System Optimization Techniques
- Force Microscopy Techniques and Applications
- Chemical and Physical Properties of Materials
- Advanced Surface Polishing Techniques
- Silicon Carbide Semiconductor Technologies
- Sensor Technology and Measurement Systems
- Optical Coatings and Gratings
- Gear and Bearing Dynamics Analysis
- Mining and Industrial Processes
- Laser Material Processing Techniques
- Bladder and Urothelial Cancer Treatments
- Cardiovascular Disease and Adiposity
- Graphene and Nanomaterials Applications
- Engineering Applied Research
- Near-Field Optical Microscopy
- Vibration and Dynamic Analysis
- Wireless Sensor Networks for Data Analysis
- Solar Thermal and Photovoltaic Systems
CEA LITEN
2012-2023
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2012-2023
Université Grenoble Alpes
2018-2022
Institut de Microélectronique, Electromagnétisme et Photonique
2022
Centre National de la Recherche Scientifique
2022
Institut polytechnique de Grenoble
2022
Institut National de l'Énergie Solaire
2008-2019
CEA Grenoble
2008
Al2O3 deposited using Atomic layer Deposition (ALD) technique is known as an excellent material for p-type silicon surface passivation. However a post-deposition annealing step needed to make the passivation effective. Thanks coupled electrical measurements (capacitance and photoconductance) chemical analyses (X-ray Photoelectron Spectroscopy (XPS) Secondary Ion Mass Spectrometry (SIMS)) carried out on same Cz sample, closer explanation of this activation process given. The presence hydrogen...
This work deals with the understanding of transport behavior different deposited Indium Tin Oxide (ITO) layers on emitter n-type heterojunction solar cells. A complete study based effective lifetime measurements has been carried out samples ITO thicknesses to evaluate passivation quality before and after deposition, showing that increasing thickness degrades properties only at low injection level. Further characterizations coupled numerical simulations demonstrate such a is due recombination...
The aim of the study was to develop a very simple process for fabrication large area n-type PERT cells by means ion implantation. We showed an improvement implanted boron activation rate with annealing temperature comparing SIMS and ECV concentration profiles. A direct positive impact on emitter saturation current density (J0e) measured. also investigated effect varying oxidation conditions during phosphorus BSF quality. Low 131 fA/cm2 measured textured surfaces, close value obtained...
Herein, the interest of a sputtering power reduction during physical vapor deposition (PVD) rear side indium‐based transparent conduction oxide (TCO) is investigated to reduce In consumption in silicon heterojunction (SHJ) solar cells. Halving supplied allows for TCO thickness 50%. Process fine‐tuning shown retain satisfying electrical properties, thus preventing unwanted additional resistance losses despite drastic thickness. The produced SHJ cells with 50% reduced show similar performances...
Passivating the contacts of crystalline silicon (c‐Si) solar cells with a poly‐crystalline (poly Si) layer on top thin oxide (SiO x ) film are currently growing interest to reduce recombination at interface between metal electrode and c‐Si substrate. This study focuses development boron‐doped poly‐Si/SiO structure obtain hole selective passivated contact reduced current density high photo‐voltage potential. The poly‐Si is obtained by depositing hydrogen‐rich amorphous plasma enhanced...
In this study, we describe the fabrication of n-type solar cells using an industrial process. The open-circuit voltage limitation is discussed by investigating influence screen-printed metallization at front and rear sides. Efficiencies above 19.0% were obtained on 125PSQ Cz-Si wafers with a reference Narrow metalized fingers deposited means stencil screen associated silver-plating step. Recombination below contacts due to metal area reduction resulted in V <sub...
The hydrogenation step contributing to the high efficiencies (>25%) reached with poly-Si/SiOx passivated contacts solar cells is still poorly understood. In this study, Fourier transform infrared spectroscopy (FTIR) used follow different bonding configurations of H during fabrication process. carrier lifetime degradation upon annealing correlated an important loss Si–H bonds, from both a‑Si:H film and SiOx interfaces. subsequent results in formation a small number bonds near crystalline...
Experimental work on laser induced ablation of thin Al2O3(20 nm)/SiN:H (70 nm) and a-Si:H (20 stacks acting, respectively, as p-type n-type silicon surface passivation layers is reported. Results obtained using two different sources are compared. The efficiently removed a femtosecond infra-red (1030 nm wavelength, 300 fs pulse duration) but the underlying highly damaged in ripple-like pattern. This collateral effect almost completely avoided nanosecond ultra-violet (248 50 ns duration),...
Bifacial solar cell n-PERT concept involves boron and phosphorus doped regions requiring both proper surface passivation. In order to reduce technology related €/W, one way considered is simplify process-flow. do so, we developed passivating/ anti-reflective/ doping SiOxNy:B SiNx:P layers. The co-anneal of these multifunctional layers allows for (1) emitter & BSF formation, (2) subsequent passivation, (3) providing satisfying optical properties. features our PECV-deposited are detailed. By...
An alternative process to the aluminium full back side is necessary realize high efficiency solar cell on thin wafers. Even if metallization paste manufacturers deliver that minimize wafer bowing 1.5 mm for lower than 200 μm, it more and critical wafers thinner 150 μm with side. The objective of this work demonstrate monocristalline silicon boron surface field (BSF), diffused from BCl3 gas source or oxide doped layer like Boron Silicon Glass (BSG), as efficient BSF. In addition deal...
Polysilicon (poly-Si) based passivating contacts are promising to improve silicon solar cells conversion efficiency. Thin poly-Si layers usually feature high sheet resistances compared conventional diffused junctions. Therefore the use of Transparent Conductive Oxides (TCO) has be considered lateral conductivity while maintaining good optical and surface passivation properties. Standard sputtered Indium Tin Oxide (ITO) can alter In this work different TCO-based have been investigated...
The use of ion implantation for PV application could be an innovative way developing advanced cell structures with respect to a very simple fabrication process. Its on p-type silicon solar cells has already showed its potential the achievement efficiency above 19% selective emitter structure [1]. Nevertheless, development more complexes architectures like n-type boron is even promising as process would remain and significantly improved. This study dedicated high quality implanted textured...
Summary form only given. The fabrication of n-type solar cell using industrial process is presented in this study. boron emitter was formed novel diffusion technique with BCl <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> precursor and the passivation made by means dry oxidation. influence grid coverage ratio on backside studied an optimized value 5% found. Efficiencies above 19.0% were obtained 125PSQ Cz wafers. We also report a...