B. Drevet

ORCID: 0000-0002-1160-4307
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Research Areas
  • Solidification and crystal growth phenomena
  • Silicon and Solar Cell Technologies
  • Advanced ceramic materials synthesis
  • nanoparticles nucleation surface interactions
  • Aluminum Alloy Microstructure Properties
  • Metallurgical Processes and Thermodynamics
  • Surface Modification and Superhydrophobicity
  • Advanced Surface Polishing Techniques
  • Semiconductor materials and devices
  • Graphite, nuclear technology, radiation studies
  • Thin-Film Transistor Technologies
  • Silicon Nanostructures and Photoluminescence
  • Crystallization and Solubility Studies
  • Radiation Dose and Imaging
  • High-Temperature Coating Behaviors
  • Aluminum Alloys Composites Properties
  • Fluid Dynamics and Thin Films
  • Thermal properties of materials
  • Electronic and Structural Properties of Oxides
  • Catalytic Processes in Materials Science
  • Photovoltaic Systems and Sustainability
  • Nuclear materials and radiation effects
  • Metallic Glasses and Amorphous Alloys
  • Material Properties and Applications
  • Catalysis and Oxidation Reactions

Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2009-2021

CEA LITEN
2009-2021

Université Grenoble Alpes
2015-2021

Institut National de l'Énergie Solaire
2010-2017

CEA Grenoble
1996-2005

Science et Ingénierie des Matériaux et Procédés
1996

Centre National de la Recherche Scientifique
1990-1996

Laboratoire d’Electrochimie et de Physico-chimie des Matériaux et des Interfaces
1990-1994

ABSTRACT Work on silicon crystal quality improvement and defect control has been carried out lab‐scale seeded growth ingots allowing wafers with controlled grain orientations. Both <111> <100> monocrystalline‐like were produced using a combination of quartz rod dipping modulated conductive heat extraction system, made in‐house, in directional solidification system. Two mono‐like wafer morphology types have produced. Their structural electrical properties are presented detail....

10.1002/pip.1221 article EN Progress in Photovoltaics Research and Applications 2011-12-30

10.1016/j.jeurceramsoc.2009.01.024 article EN Journal of the European Ceramic Society 2009-02-28

10.1016/j.jcrysgro.2013.02.010 article EN Journal of Crystal Growth 2013-02-20

La liaison interfaciale entre un metal pur non reactif et oxyde iono-covalent (isolant) est generalement assuree par de faibles interactions type physique (van der Waals) chimique (etats electroniques interfaciaux faible densite). Par consequent, mauvais mouillage observe, caracterise angle contact superieur a 90 o . Un moyen d'ameliorer le rajouter, dans une matrice metallique, solute B capable modifier favorablement l'interface metal/oxyde. Cet effet obtenu via deux mecanismes, dependant...

10.1051/jp3:1994244 article FR Journal de Physique III 1994-10-01

10.1016/0956-716x(94)90326-3 article EN Scripta Metallurgica et Materialia 1994-05-01

The presented work is part of the French PHOTOSIL project which deals with purification metallurgical grade (MG) silicon to obtain Solar Grade (SoG) by a combination innovative refinement/up-grading techniques such as segregation and plasma purification. main objectives this are production costs <;15€/kg, photovoltaic performance >15% solar cell efficiencies, material yields >85% after crystallization. In paper we present latest results obtained intensely purified via modified process....

10.1109/pvsc.2010.5614418 article EN 2010-06-01

10.1016/s0921-5093(00)01790-1 article EN Materials Science and Engineering A 2001-02-01
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