A5008730927- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Photovoltaic System Optimization Techniques
- Photovoltaic Systems and Sustainability
- Silicon Nanostructures and Photoluminescence
- solar cell performance optimization
- Electronic Packaging and Soldering Technologies
- Semiconductor materials and devices
- Solar Thermal and Photovoltaic Systems
- Advanced Surface Polishing Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Chemical and Physical Properties of Materials
- Advancements in Semiconductor Devices and Circuit Design
- Silicone and Siloxane Chemistry
- Advanced Battery Technologies Research
- Advancements in Battery Materials
- Silicon Carbide Semiconductor Technologies
- Silk-based biomaterials and applications
- Advanced MEMS and NEMS Technologies
- Green IT and Sustainability
- Structural Analysis of Composite Materials
- Smart Cities and Technologies
- Extraction and Separation Processes
- Non-Destructive Testing Techniques
UNSW Sydney
2013
Australian National University
2012
IMEC
1997-2002
STEAG (Germany)
1988
University of Freiburg
1966
Through an advanced hydrogenation process that involves controlling and manipulating the hydrogen charge state, substantial increases in bulk minority carrier lifetime are observed for standard commercial grade boron-doped Czochralski grown silicon wafers from 250-500 μs to 1.3-1.4 ms 8 550 on p-type upgraded metallurgical silicon. However, passivation is reversible, whereby passivated defects can be reactivated during subsequent processes. With appropriate processing state of hydrogen,...
Abstract In this paper, we investigate gallium co‐doping during CZ crystallization of boron and phosphorus compensated Si. It is shown that the addition yields a fully p‐type ingot with high resistivity despite B P contents in silicon. Segregation doping impurities consistent theory. Minority carrier lifetime majority mobility measurements indicate material suitable for realization solar cells comparable efficiencies to standard material. Significant light‐induced degradation minority...
This paper investigates the potential of three different methods-tabula rasa (TR), phosphorus diffusion gettering (PDG), and hydrogenation, for improving carrier lifetime in n-type Czochralski-grown upgraded metallurgical-grade (UMG) silicon samples. Our results show that lifetimes UMG wafers used this study were affected by both mobile metallic impurities as-grown oxygen precipitate nuclei. Thus, dissolution grown-in nuclei via TR removal PDG step found to significantly improve electronic...
Abstract In this work, we integrate defect engineering methods of gettering and hydrogenation into silicon heterojunction solar cells fabricated using low‐lifetime commercial‐grade p‐type Czochralski‐grown monocrystalline high‐performance multicrystalline wafers. We independently assess the impact on removal bulk impurities such as iron well passivation grain boundaries B‐O defects. Furthermore, report for first time susceptibility devices to light‐ elevated temperature–induced degradation...
A number of ingots were grown from solar grade poly Silicon, to which Boron, Phosphorous and Gallium added as dopants. The introduction a third dopant allowed for better control the resistivity doping type during ingot growth. Measured in this material is shown be systematically higher than that calculated using Scheil's law dopants distribution Klaassen's model majority carrier mobility. This underestimation be, at least partially, due reduction mobility highly compensated Si compared...
Apollon Solar's NICE (New Industrial Solar Cell Encapsulation) module technology is an innovative to encapsulate and electrically interconnect solar The electrical series connection made using under-pressure in the allowing front back glasses press copper ribbons directly onto cell busbars. Contrary standard modules, modules do not use EVA-like encapsulants. Instead a PIB (Poly-Isobutylene) edge sealing used provide barrier for moisture ingress. This paper proposes full overview of this from...
Pre‐fabrication gettering and bulk hydrogenation processes are applied to low‐bulk‐lifetime (25 μs) p‐type Czochralski silicon wafers before heterojunction (SHJ) solar cell fabrication, resulting in effective minority carrier lifetime enhancements by a factor of six. On complete SHJ cells, this translates an improvement the open‐circuit voltage ( V OC ) 71 mV, values as high 692 mV. This remarkably suggests that efficiencies approaching 25% could be possible for low‐cost – not typical...
We present solar cells fabricated with n-type Czochralski–silicon wafers grown strongly compensated 100% upgraded metallurgical-grade feedstock, efficiencies above 20%. The have a passivated boron-diffused front surface, and rear locally phosphorus-diffused structure using an etch-back process. local heavy phosphorus diffusion on the helps to maintain high bulk lifetime in substrates via gettering, whilst also reducing recombination under rear-side metal contacts. independently measured...
The presented work is part of the French PHOTOSIL project which deals with purification metallurgical grade (MG) silicon to obtain Solar Grade (SoG) by a combination innovative refinement/up-grading techniques such as segregation and plasma purification. main objectives this are production costs <;15€/kg, photovoltaic performance >15% solar cell efficiencies, material yields >85% after crystallization. In paper we present latest results obtained intensely purified via modified process....
Abstract High efficiency solar cells have been fabricated with wafers from an n‐type Czochralski grown (Cz) ingot using 100% Upgraded Metallurgical‐Grade (UMG) silicon feedstock. The UMG a passivated emitter and rear totally diffused (PERT) structure independently confirmed cell of 19.8%. This is the highest reported for based on at time publication. current power losses are analysed as function measured material parameters, including carrier mobility, lifetime presence boron–oxygen defect....
We present n-type Czochralski-grown silicon solar cells made from 100% upgraded metallurgical grade feedstock, with an independently certified peak efficiency of 21.1%. look at the impact net doping and minority carrier lifetime mobility on short-circuit current open-circuit voltage.
Our simulation work aims at analyzing optical loss mechanisms for two types of glass-glass modules: laminated modules, using example EVA (ethylene vinyl acetate) as encapsulant, and modules without encapsulant that are filled with neutral gas. The results give arguments in favor the use gas PV instead EVA. Indeed, an anti-reflection coating (ARC) on both sides front glass module appropriate ARC cell, collected current a cell encapsulated is almost equal than one obtained standard single side...
In difference to laminated state-of-the-art PV modules, major components of Apollon Solar's proprietary NICE (`New Industrial Cell Encapsulation') modules are not physically attached each other due the absence soldering and lamination. This allows for an efficient low-cost disassembly end life into their original components, such as glasses, copper connectors, solar cells. The fact that these can be recovered entire pieces opens up a more sustainable high value recycling reuse potential, in...
The limitations associated with the most widely used anisotropic etching techniques in industrial multicrystalline solar cell manufacturing processes can be reduced by using acidic solutions. Optimised conditions were found which lower reflectance from multi-c wafers below levels obtained texturing NaOH surfaces of textured show a very homogeneous distribution reflected light. Solar cells produced on higher performance than case alkaline texturing.
Czochralski (Cz)‐grown upgraded metallurgical‐grade (UMG) silicon wafers degrade significantly during high‐temperature processes, eroding their appeal as a low‐cost alternative to conventional electronic‐grade wafers. However, the thermal degradation in UMG can be delayed by utilizing prefabrication annealing step. Based on this, high‐efficiency solar‐cell process is modified selecting single‐boron diffusion step and applying phosphorus‐doped polycrystalline films electron‐selective contacts...