A5058802383- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Integrated Circuits and Semiconductor Failure Analysis
- Photovoltaic System Optimization Techniques
- Semiconductor materials and devices
- solar cell performance optimization
- Silicon Nanostructures and Photoluminescence
- Photovoltaic Systems and Sustainability
- Advancements in Semiconductor Devices and Circuit Design
- Nanowire Synthesis and Applications
- Electron and X-Ray Spectroscopy Techniques
- Chalcogenide Semiconductor Thin Films
- Nuclear Materials and Properties
- Energy and Environment Impacts
- Environmental Impact and Sustainability
- Advanced Surface Polishing Techniques
- Advanced Semiconductor Detectors and Materials
- Advancements in Battery Materials
- Extraction and Separation Processes
- Laser Material Processing Techniques
- Global Energy and Sustainability Research
- Graphite, nuclear technology, radiation studies
- Perovskite Materials and Applications
- Electronic Packaging and Soldering Technologies
UNSW Sydney
2015-2024
The University of Sydney
2017-2022
Universidade Federal do Rio Grande do Sul
2017-2022
ARC Centre of Excellence in Advanced Molecular Imaging
2010-2018
Australian Centre for Advanced Photovoltaics
2018
University of Oxford
2018
KU Leuven
2014-2015
As the photovoltaic (PV) industry heading towards multi-TW scale, PV technologies need to be carefully evaluated based on material consumption rather than just efficiency or cost ensure sustainable growth of industry.
25% annual PV growth is possible over the next decade.
Light-induced or, more broadly, carrier-induced degradation (CID) in high-performance multicrystalline silicon (TIP mc-Si) solar cells remains a serious issue for many manufacturers, and the root cause of is still unknown. In this paper, impact firing temperature on stability lifetime test structures investigated, it found that substantial CID can be triggered if peak temperatures exceed approximately 700 °C. We then investigate two pathways to stabilize performance industrially produced TIP...
Through an advanced hydrogenation process that involves controlling and manipulating the hydrogen charge state, substantial increases in bulk minority carrier lifetime are observed for standard commercial grade boron-doped Czochralski grown silicon wafers from 250-500 μs to 1.3-1.4 ms 8 550 on p-type upgraded metallurgical silicon. However, passivation is reversible, whereby passivated defects can be reactivated during subsequent processes. With appropriate processing state of hydrogen,...
Advanced hydrogenation processes targeting the generation of neutrally charged hydrogen (H°) are applied to passivate structural defects in seeded-cast quasi mono-crystalline silicon wafers and boron-oxygen Czochralski silicon. The application a one minute laser process onto finished screen printed solar cell fabricated on dislocation-rich material resulted efficiency enhancements 0.6% absolute through improvements implied open circuit voltage internal quantum vicinity dislocated regions. A...
In this letter, we report on significant changes caused after dark annealing to the kinetics of carrier‐induced defect, present in p‐type multi‐crystalline silicon PERC cells. The characteristic shapes degradation and regeneration curves under light soaking at 75 °C are dramatically altered, depending temperature an initial anneal non‐degraded cell. Dark for a fixed time (2.5 h) temperatures 200 or below, is found accelerate both subsequent rate severity, while higher it appears that...
ABSTRACT Following intensive research and development, Suntech Power has successfully commercialised its Pluto technology with 0.5 GW annual production capacity, delivering up to 10% performance advantage over conventional screen‐printed cells. The next generation of involves the development improved rear surface design based on features passivated emitter locally diffused Cells an average efficiency 20% were fabricated 155 cm 2 commercial‐grade p‐type wafers using mass‐manufacturing...
We discuss the importance of gettering and hydrogenation for next‐generation silicon solar cells in context industrial cell fabrication. Gettering play a vital role p‐type technologies improving material's minority charge carrier lifetime. These mechanisms are naturally incorporated during screen‐printed fabrication through phosphorus emitter diffusion, nitride deposition subsequent metallisation firing processes. While transition towards emitters with lower dopant concentrations and/or...
This paper discusses developments in the mitigation of light-induced degradation caused by boron-oxygen defects boron-doped Czochralski grown silicon. Particular attention is paid to fabrication industrial silicon solar cells with treatments for sensitive materials using illuminated annealing. It highlights importance and desirability hydrogen-containing dielectric layers a subsequent firing process inject hydrogen throughout bulk cell annealing processes formation simultaneously manipulate...
We report on hydrogen passivation of boron-oxygen defects through manipulation the charge states within silicon. Standard hydrogenation processes which do not control appear to passivate a significant quantity and may result in reduction lifetime for wafers with high boron doping concentrations. An improved process state is observed lead substantial improvements lifetimes standard 2 Ωcm commercial grade boron-doped Czochralski experimental compensated Ωm grown wafers. The using fully...
Recently, a new carrier-induced defect has been reported in multi-crystalline silicon (mc-Si), and shown to be particularly detrimental the performance of passivated emitter rear contact (PERC) cells. Under normal conditions, this can take years fully form. This Letter reports on accelerated formation subsequent passivation through use high illumination intensity elevated temperatures resulting within minutes. The process was tested industrial mc-Si PERC solar cells, where degradation after...
Light- and elevated temperature-induced degradation (LeTID) has been extensively studied on p-type silicon materials with increasing evidence suggesting the involvement of hydrogen. Recent findings identical phenomenon in n-type wafers have further opened up new areas understanding into inherent behavior root cause defect. In this work, we compare LeTID observed both p- under dark illuminated annealing conditions, highlighting previously unobserved similarities defect formation recovery...
Abstract The understanding and development of advanced hydrogenation processes for silicon solar cells are presented. Hydrogen passivation is incorporated into virtually all cells, yet the properties hydrogen in still poorly understood. This largely due to complex behaviour its ability exist many different forms lattice. For commercial introduced device through deposition hydrogen‐containing dielectric layers subsequent metallisation firing process. process can readily passivate structural...
Abstract The clean energy transition could see the cumulative installed capacity of photovoltaics increase from 1 TW before end 2022 to 15–60 by 2050, creating a significant silver demand risk. Here, we present learning curve for photovoltaic industry with rate 20.3 ± 0.8%. Maintaining business as usual dominance p‐type technology require over 20% current annual supply 2027 and 450–520 kt until approximately 85–98% global reserves. A rapid higher efficiency tunnel oxide passivated contact...
Abstract High‐efficiency silicon‐based tandem solar cells will likely drive the push towards terawatt (TW) scale PV manufacturing on pathway to net zero emissions by 2050. In this work, we provide a comprehensive analysis of material consumption and sustainability issues for future cells. First, analyse sustainable capacity variety potential candidates top cell in cell. We show that III‐V, CIGS CdTe are not suitable support TW‐scale manufacturing. Perovskites thus present most approach, as...
This review details the design considerations for bottom silicon cell in perovskite/silicon tandems. The highlights shift mindset required when transitioning to mass production of tandem solar cells.
Passivation of defects in silicon solar cells using hydrogen has long been an area significant interest to the photovoltaic community. In this paper, we explore importance charge states for passivation p-type and how these might be manipulated illumination. We show that by illumination during hydrogenation processes at temperatures between 475 625 K, lifetime wafers containing high concentrations can strongly increased. The magnitude increase depends on temperature, with most occurring 545 K...
A record independently confirmed production cell efficiency of 19.3% is presented for a large-area p-type Czochralski (CZ) silicon solar cell, based on the University New South Wales (UNSW) laser-doped selective emitter technology. In this paper, innovative and patented laser-doping technology simply added to standard Centrotherm turnkey line, operating with modified process addition light-induced plating steps. Impressively, achieved by using commercial grade CZ-grown wafers equipment...