A5077826305- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Nanostructures and Photoluminescence
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Perovskite Materials and Applications
- Photovoltaic System Optimization Techniques
- 2D Materials and Applications
- Chalcogenide Semiconductor Thin Films
- Advanced Surface Polishing Techniques
- Ion-surface interactions and analysis
- Quantum Dots Synthesis And Properties
- Conducting polymers and applications
- Silicon Carbide Semiconductor Technologies
- Organic Electronics and Photovoltaics
- Nanowire Synthesis and Applications
- solar cell performance optimization
- Electron and X-Ray Spectroscopy Techniques
- MXene and MAX Phase Materials
- Copper-based nanomaterials and applications
- Chemical and Physical Properties of Materials
- Magnetic Properties and Applications
- Advanced Materials Characterization Techniques
Australian National University
2016-2025
Fraunhofer Institute for Solar Energy Systems
2022
Leibniz University Hannover
2022
Canberra (United Kingdom)
2018
University of Warwick
2016
University of Manchester
2016
Observatoire de la Côte d’Azur
2015
Centre National de la Recherche Scientifique
2015
Macquarie University
2015
Beijing Solar Energy Research Institute
2012
Interstitial iron in crystalline silicon has a much larger capture cross section for electrons than holes. According to the Shockley–Read–Hall model, low-injection carrier lifetime p-type should therefore be lower that n-type silicon, while high injection they equal. In this work we confirm modeling using purposely iron-contaminated samples. A survey of other transition metal impurities reveals those which tend occupy interstitial sites at room temperature also have significantly sections...
We analyze the uncertainty of coefficient band-to-band absorption crystalline silicon. For this purpose, we determine at room temperature (295 K) in wavelength range from 250 to 1450 nm using four different measurement methods. The data presented work derive spectroscopic ellipsometry, measurements reflectance and transmittance, spectrally resolved luminescence spectral responsivity measurements. A systematic analysis based on Guide expression (GUM) as well an extensive characterization...
An existing technique for accurate measurement of iron in silicon, which was previously restricted to low injection and a narrow doping range, has been extended arbitrary levels. This allows contactless lifetime techniques be used very sensitive rapid detection under wide range conditions. In addition, an easily measured unambiguous “fingerprint” silicon identified. It is based on the invariant nature excess carrier density at injection-dependent curves, before after iron–boron pair...
Abnormally high effective carrier lifetimes have been observed in multicrystalline silicon wafers using both transient and steady-state photoconductance techniques. A simple model based on the presence of trapping centers explains this phenomenon qualitatively quantitatively. By fitting to experimental data acquired with a quasi-steady-state technique, it is possible determine trap density, energy, ratio between mean-trapping time mean-escape time. correlation density dislocation material has found.
The concentrations of transition-metal impurities in a photovoltaic-grade multicrystalline silicon ingot have been measured by neutron activation analysis. results show that the Fe, Co, and Cu are determined segregation from liquid-to-solid phase central regions ingot. This produces high near top ingot, which subsequently diffuse back into during cooling. extent this diffusion is shown to correlate diffusivity impurities. Near bottom, higher again due solid-state crucible after...
Imaging the band-to-band photoluminescence of silicon wafers is known to provide rapid and high-resolution images carrier lifetime. Here, we show that such images, taken before after dissociation iron-boron pairs, allow an accurate image interstitial iron concentration across a boron-doped p-type wafer be generated. Such can obtained more rapidly than with existing point-by-point mapping techniques. However, because technique best used at moderate illumination intensities, it important adopt...
Molybdenum telluride (MoTe2) has emerged as a special member in the family of two-dimensional transition metal dichalcogenide semiconductors, owing to strong spin-orbit coupling and relatively small energy gap, which offers new applications valleytronic excitonic devices. Here we successfully demonstrated electrical modulation negatively charged (X(-)), neutral (X(0)), positively (X(+)) excitons monolayer MoTe2 via photoluminescence spectroscopy. The binding energies X(+) X(-) were measured...
Low‐resistance contact to lightly doped n‐type crystalline silicon (c‐Si) has long been recognized as technologically challenging due the pervasive Fermi‐level pinning effect. This hindered development of certain devices such c‐Si solar cells made with partial rear contacts (PRC) directly lowly wafer. Here, a simple and robust process is demonstrated for achieving mΩ cm 2 scale resistivities on via lithium fluoride/aluminum contact. The realization this low‐resistance enables fabrication...
Abstract The impact of the transition metals iron, chromium, nickel, titanium and copper on solar‐cell performance is investigated. Each impurity intentionally added to silicon feedstock used grow p‐type, directionally solidified, multicrystalline ingots. A state‐of‐the‐art screen‐print process applied this material. Impurities like chromium cause a reduction in diffusion length. Nickel does not reduce length significantly, but strongly affects emitter recombination, reducing significantly....
Perovskite material with a bandgap of 1.7–1.8 eV is highly desirable for the top cell in tandem configuration lower bottom cell, such as silicon cell. This can be achieved by alloying iodide and bromide anions, but light-induced phase-segregation phenomena are often observed perovskite films this kind, implications solar efficiency. Here, we investigate phase segregation inside quadruple-cation complete structure find that magnitude phenomenon dependent on operating condition Under...
The concentration of boron-oxygen defects generated in compensated p-type Czochralski silicon has been measured via carrier lifetime measurements taken before and after activating the defect with illumination. rate formation these was also measured. Both were found to depend on net doping rather than total boron concentration. These results imply that additional exists a form is not able bond oxygen dimers, thus prohibiting defect. This could be explained by presence boron-phosphorus...
Abstract Mixed‐dimensional perovskite solar cells combining 3D and 2D perovskites have recently attracted wide interest owing to improved device efficiency stability. Yet, it remains unclear which method of works best obtain a mixed‐dimensional system with the advantages both types. To address this, different strategies are investigated, namely surface coating bulk incorporation. It is found that through aliphatic alkylammonium bulky cations, Ruddlesden–Popper “quasi‐2D” phase formed on...
Of all the materials available to create carrier-selective passivating contacts for silicon solar cells, those based on thin films of doped have permitted achieve highest levels performance. The commonly used chemical vapour deposition methods use pyrophoric or toxic gases like silane, phosphine and diborane. In this letter, we propose a safer simpler approach physical (PVD) both dopant. An in-situ polycrystalline film is formed, upon annealing, onto an ultrathin SiOx interlayer, thus...
Abstract Over the past five years, there has been a significant increase in both intensity of research and performance crystalline silicon devices which utilize metal compounds to form carrier‐selective heterocontacts. Such heterocontacts are less fundamentally limited have potential for lower costs compared current industry dominating heavily doped, directly metalized contacts. A low temperature (≤230 °C), TiO x /LiF /Al electron heterocontact is presented here, achieves mΩcm 2 scale...
Abstract The fundamental light–matter interactions in monolayer transition metal dichalcogenides might be significantly engineered by hybridization with their organic counterparts, enabling intriguing optoelectronic applications. Here, atomically thin organic–inorganic (O–I) heterostructures, comprising MoSe 2 and mono‐/few‐layer single‐crystal pentacene samples, are fabricated. These heterostructures show type‐I band alignments, allowing efficient layer‐dependent exciton pumping across the...
By studying the minority carrier lifetime in recently manufactured commercially available n‐ and p‐type float‐zone (FZ) silicon from five leading suppliers, we observe a very large reduction bulk when FZ is heat‐treated range 450–700 °C. Photoluminescence imaging of these samples at wafer scale revealed concentric circular patterns, with higher recombination occurring centre, far less around periphery. Deep level transient spectroscopy measurements indicate presence active defects, including...
Two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors exhibit many important structural and optoelectronic properties, such as strong light-matter interactions, direct bandgaps tunable from visible to near-infrared regions, flexibility atomic thickness, quantum-confinement effects, valley polarization possibilities, so on. Therefore, they are regarded a very promising class of materials for next-generation state-of-the-art nano/micro devices. To explore different...
Doped polysilicon (poly-Si) passivating contacts have emerged as a key technology for the next generation of silicon solar cells in mass production, owing to their excellent performance and high compatibility with existing passivated emitter rear cell technology. However, current architecture based on rear-side electron-selective (n+) poly-Si contact is also approaching its practical limit (∼26%) production. The full potential doped can only be realized through incorporation both...
This paper presents a direct quantitative comparison of the effectiveness boron diffusion, phosphorus and aluminum alloying in removing interstitial iron crystalline silicon context solar cells. Phosphorus diffusion gettering was effective more than 90% across range temperatures, sheet resistances, doses. Even relatively light diffusions (145 Ω/□) were found to give very gettering, especially when combined with extended low temperature annealing. Aluminum extremely removed 99% implanted for...
The band-band absorption coefficient in crystalline silicon has been determined using spectral photoluminescence measurements across the wavelength range of 990–1300 nm, and a parameterization temperature dependence established to allow interpolation accurate values for any between 170 363 K. Band-band 78–363 K are found match well with previous results from MacFarlane et al. [Phys. Rev. 111, 1245 (1958)], extended significantly longer wavelengths. In addition, we report 270–350 10...