This letter examines the application of transparent MoOx (x < 3) films deposited by thermal evaporation directly onto crystalline silicon (c-Si) to create hole-conducting contacts for solar cells. The carrier-selectivity based on both n- and p-type surfaces is evaluated via simultaneous consideration contact recombination parameter J0c resistivity ρc. Contacts made wafers p+ diffused regions achieve optimum ρc values 1 0.2 mΩ·cm2, respectively, result in a ∼200 fA/cm2. These suggest...

A high Schottky barrier (>0.65 eV) for electrons is typically found on lightly doped n‐type crystalline (c‐Si) wafers a variety of contact metals. This behavior commonly attributed to the Fermi‐level pinning effect and has hindered development c‐Si solar cells, while its p‐type counterparts have been commercialized several decades, utilizing aluminium alloys in full‐area, more recently, partial‐area rear configurations. Here authors demonstrate highly conductive thermally stable electrode...

In this study, we present a novel application of thin magnesium fluoride films to form electron–selective contacts n-type crystalline silicon (c-Si). This allows the demonstration 20.1%-efficient c-Si solar cell. The electron-selective contact is composed deposited layers amorphous (∼6.5 nm), (∼1 and aluminum (∼300 nm). X-ray photoelectron spectroscopy reveals work function 3.5 eV at MgF2/Al interface, significantly lower than that itself (∼4.2 eV), enabling an Ohmic between electrode c-Si....

Low‐resistance contact to lightly doped n‐type crystalline silicon (c‐Si) has long been recognized as technologically challenging due the pervasive Fermi‐level pinning effect. This hindered development of certain devices such c‐Si solar cells made with partial rear contacts (PRC) directly lowly wafer. Here, a simple and robust process is demonstrated for achieving mΩ cm 2 scale resistivities on via lithium fluoride/aluminum contact. The realization this low‐resistance enables fabrication...

Recent advances in the efficiency of crystalline silicon (c‐Si) solar cells have come through implementation passivated contacts that simultaneously reduce recombination and resistive losses within contact structure. In this contribution, low resistivity are demonstrated based on reduced titania (TiO x ) contacted with work function metal, calcium (Ca). By using Ca as overlying metal structure we able to achieve a reduction TiO up two orders magnitude compared previously reported data Al/TiO...

Effective surface treatments suppress possible recombination losses and confine photogenerated electrons holes within the bulk of silicon wafer, thus maximizing their number electrochemical potential that they can deliver to a load. For happen, it is necessary create regions with high conductivity for one carrier low other, which basis separation. There common thread joining passivation carrier-selective contacts, same principles apply both. One manipulation concentrations holes, be achieved...

This paper proposes the application of gallium oxide (Ga2O3) thin films to crystalline silicon solar cells. Effective passivation n- and p-type surfaces has been achieved by very Ga2O3 prepared atomic layer deposition using trimethylgallium (TMGa) ozone (O3) as reactants. Surface recombination velocities low 6.1 cm/s have recorded with less than 4.5 nm thick. A range parameters explored, growth rates approximately 0.2 Å/cycle providing optimum passivation. The thermal activation energy for...

Abstract Direct metallization of lightly doped n‐type crystalline silicon (c‐Si) is known to routinely produce non‐Ohmic (rectifying) contact behaviour. This has inhibited the development c‐Si solar cells with partial rear contacts, an increasingly popular cell design for high performance p‐type cells. In this contribution we demonstrate that low resistance Ohmic wafers can be achieved by incorporating a thin layer work function metal calcium (ϕ ~2.9 eV) between surface and overlying...

This paper explores the application of transparent MoO <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math>$_{x}$</tex-math></inline-formula> ( <italic xmlns:xlink="http://www.w3.org/1999/xlink">x</i> <3) films as hole-collecting contacts on rear side crystalline silicon solar cells. Two dimensional simulations, which consider experimental contact recombination xmlns:xlink="http://www.w3.org/1999/xlink">J</i> <sub...

Among the metals, magnesium has one of lowest work functions, with a value 3.7 eV. This makes it very suitable to form an electron-conductive cathode contact for silicon solar cells. We present here experimental demonstration amorphous silicon/magnesium/aluminium (a-Si:H/Mg/Al) passivating The conduction properties thermally evaporated Mg/Al structure on n-type crystalline (c-Si) are investigated, achieving low resistivity Ohmic moderately doped c-Si (∼5 × 1015 cm−3) ∼0.31 Ω cm2 and ∼0.22...

We examine the surface passivation properties of Al2O3 deposited on boron-doped planar ⟨100⟩ crystalline silicon surfaces as a function boron concentration. Both uniformly doped and diffused are studied, with concentrations ranging from 9.2 × 1015 to 5.2 1019 cm−3. Atmospheric pressure chemical vapor deposition thermal atomic layer used deposit films. The recombination rate each sample is determined photoconductance measurements together measured dopant profiles via numerical simulation,...

This work proposes gallium oxide grown by plasma‐enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se 2 (CIGS) solar cells. In preliminary experiments, metal‐insulator‐semiconductor (MIS) structure is used to compare aluminium oxide, and hafnium layers CIGS‐CdS interface. The findings suggest that on CIGS may show density positive charges qualitatively, least trap density. Subsequent cell results with an estimated 0.5 nm substantial...

Herein we report on the passivation of crystalline silicon by gallium oxide (Ga 2 O 3 ) using oxygen plasma as oxidizing reactant in an atomic layer deposition (ALD) process. Excess carrier lifetimes 2.1 ms have been measured 1.75 Ω cm p‐type silicon, from which a surface recombination current density J 0 7 fA –2 is extracted. From high frequency capacitance‐voltage (HF CV) measurements it shown that, case Al , presence negative charge Q tot / q up to –6.2 × 10 12 one factor contributing Ga...

We consider the problem of fusing probability scores from a set classifiers to estimate final fused score. Our interest is in scenarios where are statistically dependent. To that end, we propose new classifier fusion approach data driven and founded on statistical theory copulas. Numerical results with both simulated real show our copula based produces better than individual outperforms existing score approaches.

This work explores the application of transparent nitrogen doped copper oxide (CuOx:N) films deposited by reactive sputtering to create hole-selective contacts for p-type crystalline silicon (c-Si) solar cells. It is found that CuOx:N sputtered directly onto able form an Ohmic contact. X-ray photoelectron spectroscopy and Raman measurements are used characterise structural physical properties films. Both oxygen flow rate substrate temperature during deposition have a significant impact on...

Gallium oxide (Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) deposited by plasma-enhanced atomic layer deposition (PEALD) is shown to passivate crystalline silicon surfaces via a combination of high negative charge and reduction in the density surface defects below 1 × 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> cm...

Advances in the passivation of p-type and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$p^{+}$</tex-math> </inline-formula> surfaces have been one main developments crystalline silicon solar cell technology recent years, enabling significant progress cells with partial rear contacts, n-type front-side boron diffusions. In this contribution, we demonstrate improvements diffused...

In recent years a significant amount of effort has been devoted towards the development dopant-free carrier selective contacts for crystalline silicon (c-Si) solar cells. This short manuscript surveys range materials which have potential to induce carrier-selectivity when applied c-Si, including metals, metal oxides, alkali / alkaline earth salts, and organic conductors. Simple Ohmic test structures are used assess selectivity these materials, that is, hole tested on p-type c-Si electron...

We present an experimental investigation into light trapping within isotextured wafers. Measurements of reflectance and transmittance are performed on Si wafers both before after the deposition thin films their surfaces. The have a variety surface morphologies that were created by varying isotexture etch duration. find that, unlike external reflectance, in depends only weakly time (for practical durations). also induced is similar to random pyramids. Moreover, we conclude spherical-cap...

We report on significant progress towards the application of reactive ion etched (RIE) black silicon (b-Si) as an alternative to most commonly applied front-side textures utilized in crystalline photovoltaics industry - random pyramids and isotexture. The as-etched b-Si surface displays approximately 1% front side reflectance weighted across solar spectrum, outperforming both (2.83%) isotexture (6.06%) with optimized anti-reflection coatings. reduces below 0.4% after Al <sub...

Short-duration post-deposition thermal treatments at temperatures above those normally used for annealing activation have the potential to further improve already excellent passivation of crystalline silicon (c-Si) achieved by Al2O3, but so far received little attention. In this work we investigate influence rapid (RTA) on surface c-Si Al2O3 deposited atmospheric pressure chemical vapour deposition (APCVD) as a function RTA peak temperature between 500 and 900 °C, 325 440 °C. The saturation...

This paper explores the application of transparent MoO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> (x<;3) films as hole-collecting contacts on rear-side crystalline silicon solar cells. 2D simulations, which consider experimental contact recombination J xmlns:xlink="http://www.w3.org/1999/xlink">0c</sub> and resistivity ρ xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> values, demonstrate that benefits based are best exploited by...