A5075516622- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Semiconductor materials and interfaces
- Silicon and Solar Cell Technologies
- Copper-based nanomaterials and applications
- Semiconductor materials and devices
- Perovskite Materials and Applications
- Thin-Film Transistor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- solar cell performance optimization
- Conducting polymers and applications
- Photovoltaic System Optimization Techniques
- Silicon Nanostructures and Photoluminescence
- Nanowire Synthesis and Applications
- Phase-change materials and chalcogenides
- Solid-state spectroscopy and crystallography
- Advanced Thermoelectric Materials and Devices
- Advancements in Battery Materials
- Electron and X-Ray Spectroscopy Techniques
- Photovoltaic Systems and Sustainability
- 2D Materials and Applications
- Advanced Chemical Physics Studies
- Crystal Structures and Properties
- Advanced Surface Polishing Techniques
- Advanced Photocatalysis Techniques
IMEC
2016-2025
Hasselt University
2017-2025
Directorate-General for Energy
2023-2025
UCLouvain
2025
KU Leuven
2010-2024
Material (Belgium)
2017-2024
Stanford University
2024
KIIT University
2024
Imec the Netherlands
2010-2023
Institute for Materials Research, Tohoku University
2018-2023
Cu(In,Ga)(S,Se)2 absorbers with a bandgap in the near-infrared region are ideal candidates for bottom cell multi-junction solar architectures. In flexible and lightweight form factors, such devices could help power many applications through integrated cells. Here, we show use of two-step method to synthesize Cu(In,Ga)(S,Se)2, between 1.00 1.13 eV, on bendable ultra-thin glass, minority carrier lifetimes approaching 100 ns, homogenous repeatable fashion. We also report conventional...
Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption high Mo/CIGS rear interface recombination. In this work, an innovative design is developed to avoid effects: a highly reflective surface passivation with nano-sized local point contact openings employed enhance internal reflection decrease the recombination velocity...
For the first time, a novel rear contacting structure for copper indium gallium (di)selenide (CIGS) thin film solar cells is discussed theoretically, developed in an industrially viable way, and demonstrated tangible devices. The proposed cell design reduces back area by combining surface passivation layer nano-sized local point contacts. Atomic deposition (ALD) of Al2O3 used to passivate CIGS formation nano-sphere shaped precipitates chemical bath (CBD) CdS generate contact openings....
An innovative rear contacting structure for copper indium gallium (di) selenide (CIGS) thin-film solar cells is developed in an industrially viable way and demonstrated tangible devices. The idea stems from the silicon (Si) industry, where surface passivation layers are combined with micron-sized local point contacts to boost open-circuit voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OC</sub> ) and, hence, cell efficiency. However,...
Abstract Kesterite photovoltaic technologies are critical for the deployment of light‐harvesting devices in buildings and products, enabling energy sustainable buildings, households. The recent improvements kesterite power conversion efficiencies have focused on improving solution‐based precursors by material phase purity, grain quality, boundaries with many extrinsic doping alloying agents (Ag, Cd, Ge…). reported progress has been achieved due to a growth more electronically intrinsic...
Recently, Cu(In,Ga)Se <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (CIGS) solar cells have achieved 21% world-record efficiency, partly due to the introduction of a postdeposition potassium treatment improve front interface CIGS absorber layers. However, as high-efficiency essentially require long diffusion lengths, highly recombinative rear these devices also deserves attention. In this paper, an Al O...
Abstract Thin film solar cells based in Cu(In,Ga)Se 2 (CIGS) are among the most efficient polycrystalline cells, surpassing CdTe and even silicon cells. For further developments, CIGS technology has to start incorporating different cell architectures strategies that allow for very low interface recombination. In this work, ultrathin 350 nm with a rear passivation strategy studied characterized. The is achieved using an Al O 3 nanopatterned point structure. Using results, photoluminescence...
Atomic layer deposited (ALD) Al2O3 films on Cu(In,Ga)Se2 (CIGS) surfaces have been demonstrated to exhibit excellent surface passivation properties, which is advantageous in reducing recombination losses at the rear metal contact of CIGS thin-film solar cells. Here, we report, for first time, experimentally extracted electronic parameters, i.e. fixed charge density (Qf) and interface-trap (Dit), as-deposited (AD) post-deposition annealed (PDA) ALD using capacitance–voltage (C-V)...
This review summarizes all studies which used dielectric-based materials as a passivation layer at the rear surface of copper indium gallium (di)selenide, Cu(In,Ga)Se2, (CIGS)-based thin film solar cells, up to 2019. The results regarding kind dielectric materials, deposition techniques, contacting approaches, existence additional treatments, and current–voltage characteristics (J–V) passivated devices are emphasized by detailed table. techniques implement layer, approach for realization...
Previously, an innovative way to reduce rear interface recombination in Cu(In,Ga)(S,Se) <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (CIGSSe) solar cells has been successfully developed. In this work, concept is established Cu (Zn,Sn)(S,Se) xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> (CZTSSe) demonstrate its potential for other thin-film technologies. Therefore, ultrathin CZTS with Al O...
Al2O3 rear surface passivated ultra-thin Cu(In,Ga)Se2 (CIGS) solar cells with Mo nano-particles (NPs) as local contacts are developed to demonstrate their potential improve optical confinement in CIGS cells. The absorber layer is 380 nm thick and the NPs deposited uniformly by an up-scalable technique have typical diameters of 150 200 nm. passivates between NPs, while interface contact NP [Ga]/([Ga] + [In]) (GGI) grading. It shown that photon scattering due contributes absolute increase...
Ultrathin Cu(In,Ga)Se 2 solar cells are a promising way to reduce costs and increase the electrical performance of thin film cells. An optical lithography process that can produce sub‐micrometer contacts in SiO passivation layer at CIGS rear contact is developed this work. Furthermore, an optimization patterning dimensions reveals constrains over features sizes. High areas needed passivate interface so high performing be obtained. However, these should not achieved by using long distances...
Abstract This paper provides an overview of the physical vapor technologies used to synthesize Cu 2 ZnSn(S,Se) 4 thin films as absorber layers for photovoltaic applications. Through years, CZT(S,Se) have been fabricated using sequential stacking or co-sputtering precursors well co-evaporation elemental sources, leading high-efficient solar cells. In addition, pulsed laser deposition composite targets and monograin growth by molten salt method were developed alternative methods kesterite...
Current state-of-the-art Cu2ZnSn(S,Se)4 kesterite solar cells are limited by low open-circuit voltages (VOC). In order to evaluate what extent the substitution of Sn Ge is able result in higher VOC values, this article focuses on Cu2ZnGeSe4 "CZGSe" devices. To reveal their full potential, different strategies explored that, particular, aim at optimization CZGSe/buffer heterojunction. Here, employing hard X-ray photoelectron spectroscopy, it evidenced that only a combination surface...
Abstract The incorporation of interface passivation structures in ultrathin Cu(In,Ga)Se 2 based solar cells is shown. fabrication used an industry scalable lithography technique—nanoimprint (NIL)—for a 15 × cm dielectric layer patterning. Devices with NIL nanopatterned are benchmarked against electron-beam (EBL) patterning, using rigid substrates. patterned device shows similar performance to the EBL device.The impact lithographic processes cells’ were evaluated via X-ray Photoelectron...
The distinct electronic structure of the Cu 3 BiS compound (wittichenite) leads high optical absorption and suitable bandgap, making it promising for photovoltaics photoelectrochemical applications.
Sputtered nickel oxide (NiO x ) has become one of the most promising inorganic hole transport layers for p–i–n perovskite solar cells (PSCs) due to its appealing features such as robust nature, low material cost, and easy integration tandem structures large‐area applications. However, main drawback with NiO ‐based PSCs is typically open‐circuit voltage ( V OC inferior energy‐level alignment, charge mobility, high recombination at interface. Herein, two types phosphonic acid self‐assembled...
The efficiency of perovskite solar cells (PSCs) is advancing rapidly, yet their sensitivity to ambient conditions poses challenges. An additional degradation mechanism, potential‐induced (PID), can emerge during field operation, but the understanding PID within devices limited. To exclude environmental stressors, this study conducted in an inert environment at room temperature. PSCs and mini‐modules are subjected a 324 h stress test −1000 V, revealing relative losses around 29% 24% for...
ABSTRACT Atomic layer deposition (ALD) of thin Al 2 O 3 (≤10 nm) films is used to improve the rear surface passivation large‐area screen‐printed p‐type Si passivated emitter and cells (PERC). A blister‐free stack /SiO x /SiN developed, leading an improved back reflection a recombination current ( J 0,rear ) 92 ± 6 fA/cm . The if 700°C anneal in N performed after prior SiO capping. clear relationship between blistering density lower open‐circuit voltage V OC due increased contacting area...