A5083975154- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Silicon and Solar Cell Technologies
- Photonic and Optical Devices
- Advancements in Semiconductor Devices and Circuit Design
- Copper-based nanomaterials and applications
- Nanomaterials and Printing Technologies
- Semiconductor Quantum Structures and Devices
- ZnO doping and properties
- Thin-Film Transistor Technologies
- Advanced Sensor and Energy Harvesting Materials
- Integrated Circuits and Semiconductor Failure Analysis
- Quantum and electron transport phenomena
- Chalcogenide Semiconductor Thin Films
- Surface and Thin Film Phenomena
- Semiconductor Lasers and Optical Devices
- Silicon Nanostructures and Photoluminescence
- Electronic and Structural Properties of Oxides
- Gas Sensing Nanomaterials and Sensors
- Advanced Memory and Neural Computing
- Magnetic properties of thin films
- Nanoparticles: synthesis and applications
- Physics of Superconductivity and Magnetism
- Quantum Dots Synthesis And Properties
- Ga2O3 and related materials
University of Liège
2016-2025
Ho Chi Minh City Medicine and Pharmacy University
2025
Duy Tan University
2023-2024
Vietnam Atomic Energy Instiute
2013-2023
Institute of Physics
2022
Thammasat University
2021
National Electronics and Computer Technology Center
2021
Le Quy Don Technical University
2021
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2021
Kansas State University
2019
Metallic nanowire networks have huge potential in devices requiring transparent electrodes. This article describes how the electrical resistance of metal evolve under thermal annealing. Understanding behavior such films is crucial for optimization electrodes which find many applications.
Silver nanowire (AgNW) networks offer excellent electrical and optical properties have emerged as one of the most attractive alternatives to transparent conductive oxides be used in flexible optoelectronic applications. However, AgNW still suffer from chemical, thermal, instabilities, which some cases can hinder their efficient integration electrodes devices such solar cells, heaters, touch screens, organic light emitting diodes. We atmospheric pressure spatial atomic layer deposition...
Abstract An original self‐powered UV photodetector integrating ZnO/CuCrO 2 core–shell nanowire heterostructures is fabricated using low‐cost and scalable chemical deposition techniques operating at moderate temperatures. A 35 nm thick delafossite phase CuCrO shell formed with high uniformity by aerosol‐assisted vapor over an array of vertically aligned ZnO nanowires grown bath deposition. The consists columnar grains the top as well nanograins some preferential orientations on their vertical...
Hole mobility in $N,{N}^{\ensuremath{'}}$-diphenyl-$N,{N}^{\ensuremath{'}}$-bis(1-naphtylphenyl)-$1,{1}^{\ensuremath{'}}$-biphenyl-$4,{4}^{\ensuremath{'}}$-diamine ($\ensuremath{\alpha}$-NPD) is evaluated by electrical characterization the ac regime. The frequency-dependent complex admittance and impedance of structure consisting organic layer, grown thermal evaporation, sandwiched indium tin oxide aluminum electrodes, are measured as functions applied dc voltage. capacitance response shows...
The past few years have seen a considerable amount of research devoted to nanostructured transparent conducting materials (TCM), which play pivotal role in many modern devices such as solar cells, flexible light-emitting devices, touch screens, electromagnetic and thin film heaters. Currently, the most commonly used TCM for applications (ITO: Indium Tin oxide) suffers from two major drawbacks: brittleness indium scarcity. Among emerging electrodes, silver nanowire (AgNW) networks appear be...
Advancement in the science and technology of random metallic nanowire (MNW) networks is crucial for their appropriate integration many applications including transparent electrodes optoelectronics film heaters. We have recently highlighted discontinuous activation efficient percolating pathways (EPPs) having densities slightly above percolation threshold. Such exhibit abrupt drops electrical resistance when thermal or annealing performed, which gives rise to a "geometrically quantized...
Abstract This paper provides an overview of the physical vapor technologies used to synthesize Cu 2 ZnSn(S,Se) 4 thin films as absorber layers for photovoltaic applications. Through years, CZT(S,Se) have been fabricated using sequential stacking or co-sputtering precursors well co-evaporation elemental sources, leading high-efficient solar cells. In addition, pulsed laser deposition composite targets and monograin growth by molten salt method were developed alternative methods kesterite...
Silver nanowire (AgNW) networks have been lately much investigated thanks to their physical properties and are therefore foreseen play a key role in many industrial devices as transparent electrodes, but stability can be an issue.
Nowadays, stress is becoming increasingly common, especially among those who experience violence and face an increased risk of developing mood disorders. As the need to find effective treatments for anxiety depression increasing, use herbal medicine receiving more attention due its perceived safety therapeutic benefits. In this study, a social defeat model was developed using female mice evaluate anxiety-reducing memory-improving effects incense containing agarwood ( Aquilaria crassna ),...
We report on the fabrication InGaAs/InP implant free quantum well (IFQW) n-MOSFET devices 200mm wafers in a Si CMOS processing environment. The starting virtual InP substrates were prepared by means of aspect-ratio-trapping technique. Post CMP these substrate resulted planar with rms roughness 0.32 nm. After channel and gate source drain regions formed selective epitaxial growth doped InGaAs. Contact to source/drain was made standard W-plug/metal 1 process. contact resistance estimated be...
We present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.4% 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn buffers formation high-k/metal gate stacks thereon. Annealing experiments reveal that process temperatures are limited to 350 °C avoid Sn diffusion. Particular emphasis is placed electrical characterization various high-k dielectrics, as 5 nm Al2O3, HfO2, or 1 nmAl2O3/4 strained Ge0.94Sn0.06. Experimental capacitance-voltage...
We present a thorough investigation by magneto-optical imaging of the magnetic flux penetration in Nb thin films with lithographically defined border indentations. demonstrate that discontinuity lines ($d$ lines), caused abrupt bending current streamlines around indentations, depart from expected parabolic trend close to defect and depend on shape size indentation as well temperature. These findings are backed up compared theoretical results obtained numerical simulations analytical...
This work directly compares the percolation threshold of silver nanowire networks to predictions from Monte Carlo simulations, focusing particularly on incorporating impact real world imperfections. SEM image compared MATLAB simulation based physical characteristics sample.
A novel composite material is introduced and its unique electrical conduction properties are investigated using the original concept of bridge percolation. The study provides key insights into percolation resistive scaling behaviors.
Abstract Local polarization of a magnetic layer, well-known method for storing information, has found its place in numerous applications such as the popular drawing board toy or widespread credit cards and computer hard drives. Here we experimentally show that similar principle can be applied imprinting trajectory quantum units flux (vortices), travelling superconducting film (Nb), into soft layer permalloy (Py). In full analogy with board, vortices act tiny scribers leaving wake polarized...
The lack of a successful p‐type transparent semiconductor delays the future implementation electronics. In group semiconducting compounds, cuprous oxide (Cu 2 O) presents promising electrical and manufacturing features that establish it as suitable candidate for semiconductors. However, high absorbance in visible range reduces its application practical devices. this work, we achieved incorporation magnesium grown by aerosol‐assisted metal‐organic chemical vapour deposition. fabricated doped...
In this study, we report the synthesis of Ti-doped mesoporous hematite films by soft-templating for application as photoanodes in photoelectrolysis water (water splitting). Because activation dopant requires a heat treatment at high temperature (≥800 °C), it usually results collapse mesostructure. We have overcome obstacle using temporary SiO2 scaffold to hinder crystallite growth and thereby maintain mesoporosity. The beneficial effect activated has been confirmed comparing photocurrent...
This is the first report of a Si/SiGe resonant interband tunneling diodes (RITDs) on silicon substrates grown by chemical vapor deposition process. The nominal RITD structure forms two quantum wells created sharp delta-doping planes which provide for condition through intrinsic spacer. phase doping technique was used to achieve abrupt degenerate profiles at higher substrate temperatures than previous reports using low-temperature molecular beam epitaxy, and postgrowth annealing experiments...
In this paper, we report a comprehensive investigation of InP selective growth in shallow trench isolation (STI) structures on Si(001) substrates off-cut toward (111). Extended defect-free layers were obtained the top region 100 nm wide trenches. A thin Ge epitaxial layer was used as an intermediate buffer between Si substrate and layer. to reduce thermal budget for surface clean promote double-step formation surfaces. Baking As ambient improved morphology crystalline quality. showed highly...