The term junction spectroscopy embraces a wide range of techniques used to explore the properties semiconductor materials and devices. In this tutorial review, we describe most widely approaches for characterizing deep-level defects in semiconductors present some early work on which principles today's methodology are based. We outline ab-initio calculations defect give examples how density functional theory conjunction with formation energy marker methods can be guide interpretation...

By studying the minority carrier lifetime in recently manufactured commercially available n‐ and p‐type float‐zone (FZ) silicon from five leading suppliers, we observe a very large reduction bulk when FZ is heat‐treated range 450–700 °C. Photoluminescence imaging of these samples at wafer scale revealed concentric circular patterns, with higher recombination occurring centre, far less around periphery. Deep level transient spectroscopy measurements indicate presence active defects, including...

We have observed very large changes in the minority carrier lifetime when high purity float‐zone (FZ) silicon wafers are subject to heat‐treatments range of 200–1100 °C. Recombination centres were found become activated upon annealing at 450–700 °C, causing significant reductions bulk lifetime, detrimental for efficiency solar cells and stable powered devices. Photoluminescence imaging annealed 500 °C revealed concentric circular patterns, with lower lifetimes occurring centre, higher around...

In recent years it has been shown that graphene oxide (GO) can be used to passivate silicon surfaces resulting in increased photocurrents metal-insulator-semiconductor (MIS) tunneling diodes, and improved efficiencies Schottky-barrier solar cells with either metal or barriers, however, the source of this passivation is still unclear. The suggested mechanisms responsible for enhanced device performance include dangling bond saturation at surface by diverse functional groups decorating GO...

Optical characterization of the oxygen dimer in silicon has been performed for first time. The vibrational IR absorption bands at 1012, 1060, and $1105{\mathrm{cm}}^{\ensuremath{-}1}$ are shown to arise from this complex. Using heat-treatment studies, binding energy is determined be about 0.3 eV. Indications high migration ability predicted earlier found as well.

The electronic properties and thermal stability of centers incorporating a vacancy group-V-impurity atom (P, As, Sb, or Bi) in Ge crystals have been investigated. vacancy-group-V-impurity pairs ($E$ centers) induced by irradiation with $^{60}\mathrm{Co}$ $\ensuremath{\gamma}$ rays studied means capacitance transient techniques the use Au-Ge Schottky barriers. It is argued that $E$ three charge states: double negative, single negative neutral, introduce two energy levels into gap. There are...

It is known that the interstitial iron concentration in silicon reduced after annealing wafers coated with plasma-enhanced chemical vapour deposited (PECVD) nitride films. The underlying mechanism for significant reduction has remained unclear and investigated this work. Secondary ion mass spectrometry (SIMS) depth profiling of performed on annealed iron-contaminated single-crystalline passivated PECVD SIMS measurements reveal a high uniformly distributed This accumulation film matches loss...

Silicon solar cells containing boron and oxygen are one of the most rapidly growing forms electricity generation. However, they suffer from significant degradation during initial stages use. This problem has been studied for 40 years resulting in over 250 research publications. Despite this, there is no consensus regarding microscopic nature defect reactions responsible. In this paper, we present compelling evidence mechanism degradation. We observe, using deep level transient spectroscopy...

Formation kinetics of oxygen–hydrogen (O–H) complexes which give rise to an infrared absorption line at 1075.1 cm−1 have been studied in Czochralski-grown silicon crystals the temperature range 30–150 °C. Hydrogen was incorporated into by high (1200 °C) diffusion from H2 gas. It found that observed can be explained as being due interaction mobile neutral hydrogen-related species with bond-centered oxygen atoms. The binding energy O–H complex determined 0.28±0.02 eV. An activation for...

Schottky barriers formed by depositing Au on n-type Ge have been used to study the antimony-vacancy complex (E center). Both hole and electron transitions observed because formation of an inversion layer at semiconductor surface enables minority carriers be injected when barrier is forward biased. It argued that E center in has three charge states: double negative, single neutral. The free energy ionization for acceptor level found ΔG(=/−)=0.294−4.2 kT (eV), where k Boltzmann’s constant....

A center from the family of ``fourfold coordinated (FFC) defects'', previously predicted theoretically, has been experimentally identified in crystalline silicon. It is shown that trivacancy $({V}_{3})$ Si a bistable neutral charge state, with FFC configuration lower energy than (110) planar one. ${V}_{3}$ gives rise to two acceptor levels at 0.36 and 0.46 eV below conduction band edge $({E}_{c})$ gap, while it trigonal symmetry an level ${E}_{c}\ensuremath{-}0.075\text{ }\text{eV}$. From...

It is widely believed that the light induced degradation of crystalline silicon solar cells due to formation a BsO2i recombination center created by optically excited migration oxygen dimer (charge-state-driven motion). In this letter concentration dependence neutral state O2i on [Oi] in p- and n-type Cz–Si has been determined using infrared absorption. A systematic search for absorption signature doubly positively charged unsuccessful. These data strongly suggest charge-state-driven motion...

Abstract Electronic grade Czochralski and float zone silicon in the as grown state have a very low concentration of recombination generation centers (typically <10 10 cm −3 ). Consequently, integrated circuit technologies using such material, electrically active inadvertent impurities structural defects are rarely detectable. The quest for cheap photovoltaic cells has led to use less pure silicon, multi‐crystalline cost processing solar applications. Cells made this way significant...

The interstitial carbon-oxygen defect is a prominent formed in e-irradiated Cz-Si containing carbon. Previous stress alignment investigations have shown that the oxygen atom weakly perturb carbon but lack of high-frequency mode has been taken to imply severely affected and becomes overcoordinated. Local vibrational spectroscopy ab initio modeling are used investigate defect. We find new modes whose isotopic shifts give further evidence for overcoordination. Moreover, we calculated...

It is argued that the vacancy–oxygen (VO) complex (A center) in Ge has three charge states: double negative, single and neutral. Corresponding energy levels are located at Ec−0.21 eV (VO−−/−) Ev+0.27 (VO−/0). An absorption line 716 cm−1 been assigned to asymmetrical stretching vibration mode of doubly negatively charged VO complex.

In this work, conventional deep-level transient spectroscopy (DLTS) and high-resolution Laplace-DLTS (L-DLTS) have been used to characterize traps in (010) β-Ga2O3 epilayers grown by metal organic chemical vapor deposition on native Sn-doped substrates. Two types of studied, one doped with silicon during growth about 1.5 × 1017 cm−3 the other type was unintentionally (UID). Electrical measurements were conducted Au Pt Schottky barrier diodes. Si-doped samples, only electron trap emission...

Defect reactions associated with the elimination of divacancies (V2) have been studied in n-type Czochralski (Cz) grown and float-zone (FZ) Si crystals by means conventional deep-level transient spectroscopy high-resolution Laplace (LDLTS). Divacancies were introduced into irradiation 4 MeV electrons. Temperature ranges divacancy disappearance found to be 225–275 °C Cz 300–350 FZ upon 30 min isochronal annealing. Simultaneously V2 a correlated appearance two electron traps activation...

The trivacancy (V${}_{3}$) in silicon has been recently shown to be a bistable center the neutral charge state, with fourfold-coordinated configuration, V${}_{3}$[FFC], lower energy than $(110)$ planar one [V. P. Markevich et al., Phys. Rev. B 80, 235207 (2009)]. Transformations of V${}_{3}$ defect between different configurations, its diffusion, and disappearance upon isochronal isothermal annealing electron-irradiated Si:O crystals are reported from joint deep level transient spectroscopy...

Results available in the literature on minority carrier trapping and light‐induced degradation (LID) effects silicon materials containing boron oxygen atoms are briefly reviewed. Special attention is paid to phenomena associated with “deep” electron traps (J. A. Hornbeck J. R. Haynes, Phys. Rev . 1955 , 97 311) recently reported results that have linked LID transformation of a defect consisting substitutional atom an dimer (B s O 2 ) from configuration deep donor state into recombination...

Abstract We have recently found that the silicon trivacancy (V 3 ) is a bistable defect can occur in fourfold coordinated and (110) planar configurations for both neutral singly negative charge states [V. P. Markevich et al., Phys. Rev. B 80 , 235207 (2009)]. Acceptor levels of V these been determined. It has also shown at T > 200 °C, interaction mobile trivacancies with interstitial oxygen atoms results formation O complex first second acceptor E c −0.46 −0.34 eV. In present work we...

Electrically active defects introduced into Ge crystals co-doped with tin and phosphorus atoms by irradiation 6 MeV electrons have been studied means of transient capacitance techniques ab-initio density functional modeling. It is shown that Sn are effective traps for vacancies (V) in the irradiated Ge:Sn+P crystals. The electronic structure Sn-V unraveled on basis hybrid states from a atom divacancy. Unlike case Si, not donor. A hole trap 0.19 eV activation energy emission to valence band...

This review aims at providing a retrospective, as well description of the state-of-the-art and future prospects regarding theoretical experimental characterisation negative-U defects in semiconductors. is done by complementing account with work that resulted some most detailed, yet more complex defect models The essential physics underlying behaviour presented, including electronic correlation, electron–phonon coupling, disproportionation, transition levels rates. Techniques for analysis...