Microelectronic products are very sensitive to ionizing radiation (electrons, protons, heavy charged particles, X-ray, and γ radiation). Lead is the commonly used material for protection. Bismuth deposition has become an interesting subject electrochemical community because of bismuth's unique electrical, physical, chemical properties. There a limited number authors dealing with continuous bismuth films onto metallic substrates by electrodeposition method. The conditions Bi structure...

A center from the family of ``fourfold coordinated (FFC) defects'', previously predicted theoretically, has been experimentally identified in crystalline silicon. It is shown that trivacancy $({V}_{3})$ Si a bistable neutral charge state, with FFC configuration lower energy than (110) planar one. ${V}_{3}$ gives rise to two acceptor levels at 0.36 and 0.46 eV below conduction band edge $({E}_{c})$ gap, while it trigonal symmetry an level ${E}_{c}\ensuremath{-}0.075\text{ }\text{eV}$. From...

Comparative studies employing Deep Level Transient Spectroscopy and C-V measurements have been performed on recombination-enhanced reactions between defects of interstitial type in boron doped silicon diodes irradiated with alpha-particles. It has shown that self-interstitial related which are immobile even at room temperatures can be activated by very low forward currents liquid nitrogen temperatures. Their activation is accompanied the appearance carbon atoms. found rather high current...

The method of IR-spectroscopy using a module for diffuse reflection, the films negative photoresists AZ nLOF 5510 thick 0,99 μm, applied to surface silicon plates by centrifugation, were studied. Electron irradiation with an energy 3,5 MeV dose 7∙1016 cm-2 was carried out on ELU-4 linear accelerator electrons. It is shown that carbon-hydrogen bonds main component photoresist – phenol-formaldehyde resin - are stable up doses ~ (1–3)∙1016 cm-2. bands associated solvent disappear from spectrum...

Defect reactions associated with the elimination of divacancies (V2) have been studied in n-type Czochralski (Cz) grown and float-zone (FZ) Si crystals by means conventional deep-level transient spectroscopy high-resolution Laplace (LDLTS). Divacancies were introduced into irradiation 4 MeV electrons. Temperature ranges divacancy disappearance found to be 225–275 °C Cz 300–350 FZ upon 30 min isochronal annealing. Simultaneously V2 a correlated appearance two electron traps activation...

The trivacancy (V${}_{3}$) in silicon has been recently shown to be a bistable center the neutral charge state, with fourfold-coordinated configuration, V${}_{3}$[FFC], lower energy than $(110)$ planar one [V. P. Markevich et al., Phys. Rev. B 80, 235207 (2009)]. Transformations of V${}_{3}$ defect between different configurations, its diffusion, and disappearance upon isochronal isothermal annealing electron-irradiated Si:O crystals are reported from joint deep level transient spectroscopy...

Abstract We have recently found that the silicon trivacancy (V 3 ) is a bistable defect can occur in fourfold coordinated and (110) planar configurations for both neutral singly negative charge states [V. P. Markevich et al., Phys. Rev. B 80 , 235207 (2009)]. Acceptor levels of V these been determined. It has also shown at T > 200 °C, interaction mobile trivacancies with interstitial oxygen atoms results formation O complex first second acceptor E c −0.46 −0.34 eV. In present work we...

Electrically active defects introduced into Ge crystals co-doped with tin and phosphorus atoms by irradiation 6 MeV electrons have been studied means of transient capacitance techniques ab-initio density functional modeling. It is shown that Sn are effective traps for vacancies (V) in the irradiated Ge:Sn+P crystals. The electronic structure Sn-V unraveled on basis hybrid states from a atom divacancy. Unlike case Si, not donor. A hole trap 0.19 eV activation energy emission to valence band...

The elimination of divacancies (V2) upon isochronal and isothermal annealing has been studied in oxygen-rich p-type silicon by means deep level transient spectroscopy (DLTS) high resolution Laplace DLTS. Divacancies were introduced into the crystals irradiation with 4 or 6 MeV electrons. temperature range divacancy disappearance was found to be 225-300 °C 30 min samples studied. A clear anti-correlation between V2 appearance two hole traps activation energies for emission 0.23 eV 0.08...

It has been recently suggested that oxygen-related bistable thermal double donors (BTDDs) are responsible for the reduction of minority carrier lifetime and conversion efficiency novel amorphous-crystalline Si heterojunction solar cells with their base formed from n-type Czochralski-grown (Cz) silicon [M. Tomassini et al., J. Appl. Phys. 119, 084508 (2016)]. To test this hypothesis, we have studied processes associated emission capture by BTDDs in p+-n Schottky barrier diodes on Cz-Si...

New findings on the formation and annealing of interstitial boron-interstitial oxygen complex (BiOi) in p-type silicon are presented. Different types n+−p structures irradiated with electrons alpha-particles have been used for DLTS MCTS studies. Electronic excitation essentially changes rate BiOi. It has found that increase content slows BiOi down. The activation energy dissociation determined it was germanium doping does not change energy.

Using forward current injection with densities in the range 15–30 A/cm2 we can effectively eliminate radiation-induced boron–oxygen complex, which is main compensating center irradiated Si solar cells. It was found that for a given density elimination rate decreasing increasing irradiation dose. Additionally, some evidences have been obtained on negative-U properties of complex.

Electrically active defects induced by electron irradiation in Czochralski (Cz)-grown Si crystals with low carbon content (NC≤2 × 1015 cm−3) have been studied means of Hall effect measurements, deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS (LDLTS). It has found that n-type carbon-lean Cz-Si irradiated at room temperature a centre an acceptor Ec−0.11 eV (E0.11) is one the dominant radiation-induced defects. This not observed after NC> 1016 cm−3. The E0.11 trap...

It is argued in this work that a DLTS signal associated with hole emission from radiation-induced defect an energy level at E v + 0.09 eV related to complex of silicon di-interstitial oxygen atom (I 2 O). This has been observed the spectra p-type Si:O samples irradiated either 4-6 MeV electrons or alpha particles. Isochronal and isothermal annealing studies have shown responsible for disappears upon heat-treatments temperature range 75-100 °C its formation behavior similar center giving rise...

The evolution of radiation-induced carbon-related defects in low temperature irradiated oxygen containing silicon has been studied by means Fourier transform infrared absorption spectroscopy (FTIR) and deep level transient (DLTS). FTIR measurements have shown that annealing interstitial carbon atom Ci, occurring the interval 260-300 K, results a gradual appearance number new bands along with well known related to CiOi complex. are positioned at 812, 910.2, 942.6, 967.4 1086 cm-1. It found...