A5028583115- Semiconductor materials and interfaces
- Silicon and Solar Cell Technologies
- Silicon Nanostructures and Photoluminescence
- Ion-surface interactions and analysis
- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor Quantum Structures and Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Surface Polishing Techniques
- Advanced Research in Systems and Signal Processing
- Advanced Signal Processing Techniques
Institute of Physics
2006-2024
National Academy of Sciences of Ukraine
2010-2024
In this study, the new data concerning electronic and vibrational properties of B s O 2i * defect in Czochralski‐grown boron‐doped silicon are reported. subjected to treatment at elevated temperatures, a boron‐related is detected. An additional intracenter transition for boron associated with revealed observed. The identified as due linear dependence its formation efficiency on content quadratic oxygen concentration. complex formed synchronously annealing previously defect. detected result...
The evolution of radiation-induced carbon-related defects in low temperature irradiated oxygen containing silicon has been studied by means Fourier transform infrared absorption spectroscopy (FTIR) and deep level transient (DLTS). FTIR measurements have shown that annealing interstitial carbon atom Ci, occurring the interval 260-300 K, results a gradual appearance number new bands along with well known related to CiOi complex. are positioned at 812, 910.2, 942.6, 967.4 1086 cm-1. It found...
A new absorption spectrum has been detected in the region of 770–805 cm−1 following annealing low temperature irradiated Sn-doped Ge. The develops simultaneously with disappearance V2-related band. spectra arise both p- (doping gallium) and n- antimony) type samples are completely identical to corresponding dopants. studies have shown that defects responsible for registered hydrogen-like excited states similar those observed group-III acceptors group-V donors identified as SnV2Ga SnV2Sb....
Interstitial boron-related defects in silicon subjected to irradiation with 5 MeV electrons at a temperature of 80 K are investigated by Fourier-transform infrared absorption spectroscopy. This study demonstrates the radiation-enhanced annealing interstitial boron during irradiation. We have revealed interaction, which occurs course irradiation, diffusing atoms one another and oxygen. The local vibrational modes associated these identified, thermal stability is determined.
New experimental and theoretical results on the silicon di‐interstitial (I 2 ) its interactions with oxygen carbon impurity atoms in Si crystals are reported. Electronic structure calculations indicate that I has an acceptor a donor level gap, which close to conduction valence band edges, respectively. Experimental results, support theoretically predicted high mobility of , discussed. It is argued mobile can be trapped by impurities. The O center at E v +0.09 eV. Two absorption bands 936 929...
The FTIR absorption studies of boron-doped silicon irradiated at 80 K by 5 MeV electrons have shown the recombination-enhanced migration interstitial boron Bourgoin-Corbett mechanism. interaction diffusing atoms B i with one another and oxygen was revealed. For as-irradiated samples we observed appearance three LVMs 739.4, 759.6, 780.9 cm -1 , which are attributed to complex, LVM 923.5 identified as O complex.
In silicon with high oxygen and boron content a new absorption band situated near 1026 cm-1 was found in Si after light illumin Superscript text ation intensity of 70 mW/cm 2 . It shown that both are the component defect to which corresponds. revealed occurs also during thermal treatments without illumination when weak current applied sample upon treatment. The assumption made formation as result direct interaction components through intermediate metastable states.
The measurements of stress induced dichroism on oxygen absorption band near 1107 cm-1 in Si1-xGex compounds and subsequent kinetics the recovery upon isothermal annealing have been carried out. It has found that magnitude introduced by uniaxial decreases with increasing Ge content. Two components found. On basis studying spectra samples under investigations it was assumed two relaxation correspond to diffusion being a different nearest environment: one component corresponds surrounded...
We report the data on electronic absorption of interstitial boron‐related defects in silicon, irradiated with 5 MeV electrons. Two new features have been revealed spectrum boron‐doped Si. The sharp line at 4385.2 cm −1 is detected Si 80 K and subjected to subsequent annealing up 300 K. emergence registered depends concentration boron does not depend presence oxygen carbon samples. associated B i s complex. It shown that samples inhibits formation defects. disappearance −1 upon accompanied...
Herein, the influence of heat treatment at 400 °C on spectrum boron intracenter transitions in silicon using IR absorption spectroscopy is investigated. In transition region from ground 1Γ 8 + state associated with p 3/2 valence band Si to odd‐parity excited states boron, a new line its maximum 261.3 cm −1 observed thermally treated boron‐doped Cz‐Si. Oxygen component defect that responsible for detected line. Perturbation atoms due inhomogeneous stress effect neighboring oxygen results...
Silicon doped with boron is the most widely used material in modern microelectronic devices based on p-Si. Therefore, it important to thoroughly understand boron’s role processes of defect-impurity interaction Si both growing and during operation devices. In this work, interactions oxygen are investigated by studying absorption intracenter transitions, which known be highly sensitive local environment. boron-doped Si, two lines maxima at 228 261.3 cm−1 were detected. The linear dependence...
The interstitial carbon impurity (CI) vibrational modes in monocrystalline Si-rich SiGe were investigated by Fourier Transform Infra Red spectroscopy and density functional modelling. two absorption bands of CI are found to be close those silicon, but show shifts opposite directions with increasing Ge content. transversal mode band at 932 cm-1 slightly the high frequency side, while longitudinal 922 suffers a pronounced red-shift. Each Ci-related is consist components. An annealing Si1-xGex...
The data on the features of electronic absorption in boron‐doped silicon irradiated at 80 K with 5 MeV electrons are presented this paper. transition a frequency 4296.8 cm –1 is revealed spectra as‐irradiated Si samples. intensity registered line grows boron concentration. formation defect responsible for independent presence oxygen and carbon investigations show that vacancies not components related to line. study thermal stability shows disappearance annealing accompanied by synchronous...