A5021117198- Semiconductor materials and interfaces
- Silicon and Solar Cell Technologies
- Semiconductor materials and devices
- Silicon Nanostructures and Photoluminescence
- Quantum Dots Synthesis And Properties
- Thin-Film Transistor Technologies
- Chalcogenide Semiconductor Thin Films
- Porphyrin and Phthalocyanine Chemistry
- Conducting polymers and applications
- Nonlinear Optical Materials Studies
- Organic Electronics and Photovoltaics
- Photochemistry and Electron Transfer Studies
- Molecular Junctions and Nanostructures
- Integrated Circuits and Semiconductor Failure Analysis
- Nanowire Synthesis and Applications
- Dental materials and restorations
- Nonlinear Optical Materials Research
- Perovskite Materials and Applications
- Building materials and conservation
- Nanoplatforms for cancer theranostics
- Copper-based nanomaterials and applications
- Innovations in Concrete and Construction Materials
- Advancements in Semiconductor Devices and Circuit Design
- Solid-state spectroscopy and crystallography
- Nanoparticle-Based Drug Delivery
Australian National University
2021-2024
Minia University
2017-2024
Doped polysilicon (poly-Si) passivating contacts have emerged as a key technology for the next generation of silicon solar cells in mass production, owing to their excellent performance and high compatibility with existing passivated emitter rear cell technology. However, current architecture based on rear-side electron-selective (n+) poly-Si contact is also approaching its practical limit (∼26%) production. The full potential doped can only be realized through incorporation both...
One of the important factors in performance perovskite solar cells (PSCs) is effective defect passivation. Dimensional engineering technique a promising method to efficiently passivate non‐radiative recombination pathways bulk and surface PSCs. Herein, passivation approach for perovskite/hole transport layer interface presented, using mixture guanidinium n‐octylammonium cations introduced via GuaBr n‐OABr. The dual‐cation can provide an open‐circuit voltage 1.21 V with power conversion...
Abstract Passivating contact technologies are essential for fabricating high‐efficiency crystalline silicon (c‐Si) solar cells, and their application incorporation into manufacturing lines has ranked as a hot topic of research. Generally, ideal passivating contacts should combine excellent electrical contact, outstanding surface passivation, high optical transparency. However, addressing all these criteria concurrently is challenging since it unlikely any single material to exhibit both...
Passivating contacts based on transition metal oxides (TMOs) have the potential to overcome existing performance limitations in high‐efficiency crystalline silicon (c‐Si) solar cells, which is a significant driver for continuing cost/Watt reductions of photovoltaic electricity. Herein, innovative stacks Al‐alloyed TiO x (Al y ) and pure as transparent electron‐selective passivating n‐type c‐Si surfaces are explored. An optimized stack 2 nm Al shown provide both record‐quality surface...
Amorphous thin-film TiOx prepared via atomic layer deposition (ALD) has been identified as one of the most promising materials for use in transparent passivating contacts high-efficiency and low-cost crystalline silicon (c-Si) solar cells. As highlighted this work, passivation performance ALD layers strongly depends on metal precursor used, with films using TiCl4 recently showing best results. However, a full understanding how such achieve their high level surface not yet demonstrated. This...
III–V semiconductors are among the highest performing materials for solar energy conversion devices. Exposing to a hydrogen plasma can improve optoelectronic properties and is critical step in fabricating efficient InP cells. However, there limited understanding of changes induced by exposure surface bulk semiconductors. Herein, it demonstrated that 19.3% p‐InP cell with TiO 2 electron selective contact layer be achieved exposing substrate plasma. Detailed investigations employing...
Cu2O is an important p-type semiconductor material with applications in thin-film transistors, photovoltaics, and water splitting. For such applications, pinhole-free uniform thin films are desirable, thus making atomic layer deposition (ALD) the ideal fabrication technique. However, existing ALD Cu precursors suffer from various problems, including limited thermal stability, fluorination, or narrow temperature windows. Additionally, some processes result CuO instead of Cu2O. Therefore, it...
Our research unveils strategies for developing exceptional TiO x -based passivating contacts, potentially replacing traditional Si-based ones with highly stable, transparent alternatives.
Abstract Surface passivation is crucial for many high-performance solid-state devices, especially solar cells. It has been proposed that 2D hexagonal boron nitride (hBN) films can provide near-ideal due to their wide bandgap, lack of dangling bonds, high dielectric constant, and easy transferability a range substrates without disturbing bulk properties. However, so far, the hBN studied small areas, mainly because its sizes. Here, we report characteristics wafer-scale, few monolayers thick,...