A5101465586- Advanced Surface Polishing Techniques
- Metal and Thin Film Mechanics
- Diamond and Carbon-based Materials Research
- Advanced machining processes and optimization
- Advanced materials and composites
- Advanced Machining and Optimization Techniques
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Corrosion Behavior and Inhibition
- Copper Interconnects and Reliability
- Force Microscopy Techniques and Applications
- Adhesion, Friction, and Surface Interactions
- ZnO doping and properties
- Nanomaterials and Printing Technologies
- Electrodeposition and Electroless Coatings
- Fluid Dynamics and Thin Films
- Lubricants and Their Additives
- Tribology and Wear Analysis
- Fluid Dynamics and Heat Transfer
- Hydrogen embrittlement and corrosion behaviors in metals
- High Entropy Alloys Studies
- Electric Vehicles and Infrastructure
- Tunneling and Rock Mechanics
- Electric and Hybrid Vehicle Technologies
- Advancements in Photolithography Techniques
Jiangsu University
2024
Tsinghua University
2011-2023
State Key Laboratory of Tribology
2008-2022
Chemical mechanical polishing (CMP) of GaN(0001) with a H2O2-SiO2-based slurry is investigated in this paper. The result shows that an atomically flat surface roughness 0.065 nm obtained after polishing. Compared SiO2-based slurry, the can realize higher material removal rate (MRR) and better quality less scratches. pH value mainly affects mean particle size SiO2 chemical environment corrosion reaction H2O2, resulting different MRRs. An off-site auxiliary method employed along system using...
Galvanic corrosion of Cu is a critical issue during the chemical mechanical polishing (CMP) process barrier layer, especially when KIO4 used as oxidant in slurry. This paper focuses on investigation galvanic inhibitors (BTA and 1, 2, 4-triazole) for Cu/Ru couple KIO4-based solutions. The current was directly measured, inhibition efficiencies (CIE) were calculated. Results show that both BTA 4-triazole are effective Cu. CIE 5 mM 2 up to 69.4 59.7, respectively. On this basis, mechanism...