A5088071105- Advanced Materials and Semiconductor Technologies
- Advanced Energy Technologies and Civil Engineering Innovations
- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- GaN-based semiconductor devices and materials
- Photonic and Optical Devices
- Physical Unclonable Functions (PUFs) and Hardware Security
- Polymer Nanocomposite Synthesis and Irradiation
- Calibration and Measurement Techniques
- Acoustic Wave Resonator Technologies
- Advanced Semiconductor Detectors and Materials
- Infrared Target Detection Methodologies
- Geophysics and Sensor Technology
- Semiconductor Lasers and Optical Devices
- Photorefractive and Nonlinear Optics
- Sensor Technology and Measurement Systems
- Ferroelectric and Negative Capacitance Devices
- Radio Frequency Integrated Circuit Design
- Geotechnical and Geomechanical Engineering
- Integrated Circuits and Semiconductor Failure Analysis
- Nonlinear Optical Materials Research
- Security and Verification in Computing
- Aerospace, Electronics, Mathematical Modeling
- Technology Assessment and Management
- Ferroelectric and Piezoelectric Materials
MIREA - Russian Technological University
2017-2024
Bauman Moscow State Technical University
2016
Moscow State Institute of Electronics and Mathematics
2001
The polarization state of a thin Pb(ZrTi)O3 film is probed by optical second-harmonic generation (SHG) while applying an external voltage (a sine wave). A hysteresis in the SHG intensity observed that corresponds to dielectric and analyzed using phenomenological relation between polarization. Based on this model, during reversal mapped.
Techniques and programs for calculation modeling of thermal characteristics MEMS-designs radiation receivers are offered. Comparative estimates with heatsensitive thin films executed. Results researches can be used development original radiation.
In work analytical expressions for assessment of the tribochemical changes and definition most effective direction regulation contact interactions are received. These results can be used analysis experimental data at a research mechanisms change polymeric materials superficial properties.
Design solutions of domestic VLSI were obtained as a result the application computeraided design tools foreign supplier (CAD Synopsys, Cadence Systems and Mentor Graphics), based on standard libraries PDK elements (Project KIT) factories IC-modules also supplied mainly by companies. As rule, developer does not have its own production facilities, using services provided (fablesscompanies). Due to this fact, relevant are studies aimed at development complex measures, excluding possibility...
Objectives . The development of computer technology and information systems requires the consideration issues their security, various methods for detecting hardware vulnerabilities digital device components, as well protection against unauthorized access. An important aspect this problem is to study existing possibility ability identify errors or search on corresponding models. aim work develop approaches, tools in at an early design stage, create a methodology detection risk assessment,...
The work is devoted to improving the functionality of semiconductor integrated matrix receiver visible range radiation with a capacitor multichannel analog-to-digital Converter on chip. Reading carried out by column sequential approximation digital-analog converter based switched capacitors DAC charge summation. In receiver, occupied area and dissipated power chip are significantly reduced simple implementation structures technology micro-devices manufacturing.
The combination of ion-beam spraying and raster electronic microscopy allows to receive images sections defects the growth nature origin in epitaxial films on GaN basis with nanodimensional permission, carry out their analysis classification irrespective conditions receiving. Results application specified methods for technological operations when forming microwave transistors are considered: formations locks, receiving holes drawing contacts.
This paper examines cathodoluminescence spectra of samples on sapphire substrates to develop methods non-destructive testing wafers with AlGaN/GaN heterostructures. It has been determined that the peak AlGaN compound was demonstrated for decreased energy excitation electrons (at 0.5 eV and 1 keV) only. Cathodoluminescence AlN 6.15 at any eV. spectrum analysis allowed determining aluminum percentage in AlGaN, which essential inward microwave transistors production. Data intensity distribution...
In work techniques of calculations the key parameters bimetal capacitive IR detectors matrix are presented. Sensitivity characteristics detector were calculated and prototype model in form bimetallic console was produced. The possibility use MEMS-receivers on basis effect as an alternative to pyroelectric microbolometer is shown.
The route of design and technique simulation a wave solid-state gyroscope with the ring resonator are developed. Simulation dependences characteristics on data their optimization for job necessary mode movement, in particular, resonance frequency excitation second executed. compensation mass defects resulting from admissions technological operations production (technological defects) leading to shift initial provision nodal points is presented.
In work results of researches in the area simulation electrical characteristics AlGaN/GaN field-effect transistor are provided. The considerable difference transport processes case strong and feeble polarization is shown. role capture centers volume a buffer layer GaN analyzed it shown that deep interruptions can influence considerably on distribution electrostatic potential density electrons layer. high concentration there sharp lowering free with increase distance from channel, current...
Abstract At the present time urgent direction is to investigate possibilities of new materials as a base for further improvement very large-scale integration in order create elements submicron digital circuits with improved characteristics. The paper presents and discusses results measurements volt-farad characteristics structures PbTiO 3 /YBa 2 Cu O 7-x ferroelectric films on strontium titanate substrate. New data heterostructures thin are obtained, particular it shown that studied local...