A5103325536- Crystallization and Solubility Studies
- X-ray Diffraction in Crystallography
- GaN-based semiconductor devices and materials
- Crystallography and molecular interactions
- Classical Antiquity Studies
- Ga2O3 and related materials
- Semiconductor Quantum Structures and Devices
- Chalcogenide Semiconductor Thin Films
- ZnO doping and properties
- Archaeological and Historical Studies
- Quantum Dots Synthesis And Properties
- Copper-based nanomaterials and applications
- Ancient Mediterranean Archaeology and History
- Ferroelectric and Piezoelectric Materials
- 2D Materials and Applications
- Acoustic Wave Resonator Technologies
- Semiconductor materials and devices
- Archaeological and Geological Studies
- Medieval Architecture and Archaeology
- Metal and Thin Film Mechanics
- Aluminum Alloys Composites Properties
- Boron and Carbon Nanomaterials Research
- Electronic and Structural Properties of Oxides
- Aluminum Alloy Microstructure Properties
- Historical Studies of Medieval Iberia
Travaux et Recherches Archéologiques sur les Cultures, les Espaces et les Sociétés
2015-2024
Centre National de la Recherche Scientifique
2011-2024
Laboratoire Charles Coulomb
2013-2024
Université de Montpellier
2013-2024
Université de Toulouse
2024
BioVentures (United States)
2022
Université Bordeaux Montaigne
2019
Cameca (France)
2010-2015
STMicroelectronics (France)
2011
Biophy Research (France)
2011
Epitaxial PbZrxTi1−xO3 (PZT) films have been prepared by metalorganic chemical vapor deposition on SrTiO3 substrates. Two sets of thicknesses 50–100 and 700–1400 nm, containing 0%, 40%, 60%, 100% Zr, were investigated. The refractive index n was determined ellipsometry for the thin reflectivity thicker films. Results obtained over energy range from 1.55 to 3.72 eV, with a Cauchy-fit extrapolation down 0.62 eV. refractive-index curves show systematic variation composition. For all...
Abstract InSe is a promising material in many aspects where the role of excitons decisive. Here we report sequential appearance its luminescence exciton, biexciton, and P-band exciton-exciton scattering while excitation power increases. The strict energy momentum conservation rules are used to reexamine exciton binding energy. new value ≥20 meV markedly higher than currently accepted one (14 meV), being however well consistent with robustness up room temperature. A peak controlled by...
Diamond-like carbon (DLC) and silicon carbide (SiC) coatings are attractive because of low friction coefficient, high hardness, chemical inertness smooth finish, which they provide to biomedical devices. Silicon wafers (Si(waf)) silicone rubber (Si(rub)) plates were coated using plasma-enhanced vapour deposition (PE-CVD) techniques. This article describes: 1- the characterization modified surfaces attenuated total reflection-Fourier transform infrared spectroscopy (ATR/FTIR) contact angle...
Abstract Since a few years, indium nitride promising properties for device applications have attracted much attention worldwide. Huge efforts are dedicated to optimize growth. However, this growth is extremely challenging, in particular using the metal organic vapor phase epitaxy (MOVPE) technique which exhibits very low rates. This may explain why most of samples available scientific community, also present best electrical properties, were grown by molecular beam (MBE). up date, no...
The sp2-bonded layered compound boron nitride (BN) exists in more than a handful of different polytypes (i.e., layer stacking sequences) with similar formation energies, which makes obtaining pure monotype single crystals extremely tricky. co-existence crystal leads to the many interfaces and structural defects having deleterious influence on internal quantum efficiency light emission charge carrier mobility. However, despite this, lasing operation was reported at 215 nm, has shifted...
Experimental studies were carried out on infrared-active phonons in the Aurivillius ferroelectric ${\mathrm{SrBi}}_{2}{\mathrm{Ta}}_{2}{\mathrm{O}}_{9}$ (SBT), using reflectivity measurements (down to $200{\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$) and transmission $100{\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$) crystals, pellets, thin films. An analysis was done of contrasting consequences competing orthorhombic pseudotetragonal symmetries SBT. Reflectivity results for light polarized...
Polarized microscope observation of ferroelastic domains in a SrBi2Ta2O9 (SBT) single crystal reveals the presence up to Tc1≃770 K, which supports ferroelasticity and Amam symmetry intermediate phase between ferroelectric paraelectric phases. Far-infrared spectra SBT ceramics, thin films show well underdamped optical soft mode at 28 cm−1, partially softens 21 cm−1 near transition temperature (Tc2≅600 K). This softening does not explain entire anomaly low-frequency permittivity observed Tc2....
We report a study of polymorphic boron nitride (BN) samples. interpret the photoluminescence (PL) line at $6.032\ifmmode\pm\else\textpm\fi{}0.005\phantom{\rule{0.16em}{0ex}}\mathrm{eV}$ that can be recorded 8 K in $s{p}^{2}$-bonded BN as being signature excitonic fundamental bandgap Bernal (bBN) [or graphitic (gBN)] polymorph. This is determined by advanced PL measurements combined with x-ray characterizations on pure hexagonal (hBN) and crystal samples, later compared theoretical...
Boron nitride (BN) layers with sp2 bonding have been grown by metal organic chemical vapor deposition on AlN underlayers, which are deposited c-plane sapphire substrates. Two different boron precursors were employed—trimethylboron and triethylboron—while ammonia was used as the nitrogen precursor. The BN obtained epitaxial films contain ordered rhombohedral (rBN) partially turbostratic (tBN) stackings evidenced x-ray diffraction analysis. We discriminatively identify PL signatures of rBN tBN...
We extend to any temperature, the sophisticated calculation of evolution 2 K photoluminescence energy InN proposed by Arnaudov et al. [Phys. Rev. B 69, 115216 (2004)], in view determining residual doping thin films. From detailed line shape modeling, we extract full width at half maximum which, first order, varies like n0.51 low temperature. This allows us propose a handy tool for rapid evaluation. Last, temperature and inhomogeneous broadening effects are analyzed. Ignoring latter is shown...
Indium nitride (InN) quantum dots have been grown on gallium (GaN) templates with heights of 10 and 20nm. The authors demonstrate that the surface densities are strongly affected by nature carrier gas used during growth, which can be to modulate density. show here replacing nitrogen helium leads a decrease dot density, while argon induces strong increase Although validated for InN∕GaN system, this approach has more general scope extended other material systems.
The original goal of our study is to synthesize by co‐evaporation the phase that could be formed at interface between polycrystalline p‐Cu(In,Ga)Se 2 treated with KF and n‐CdS. Hence, a new buffer layer, CdIn S 4 (C24), deposited presented for use in thin film solar cells, exhibiting device efficiencies as high 16.2%, comparable obtained on reference standard CdS‐buffered device. physico‐chemical optical properties close stoichiometry 400 nm‐thick films C24 show similar what has been...
Thermal annealing of InN layers grown by metal organic vapor phase epitaxy (MOVPE) is investigated in nitrogen atmosphere for temperatures ranging from 400 to 550 °C and heat treatment times up 12 h. This results hydrogen outdiffusion, lowering significantly the residual n-type background doping. mechanism shown be reversible through thermal under ammonia atmosphere, responsible incorporation during growth. These establish a MOVPE process allowing obtention samples, which exhibit similar...
Abstract We have investigated the heteroepitaxial growth of indium nitride on sapphire substrates having different orientations. Growths were performed C‐, A‐, M‐, and R‐plane‐oriented in order to analyze substrate orientation effect structural, optical, electronic properties InN. The relationship between InN was deduced by θ /2 High‐resolution X‐ray diffraction (HRXRD) measurements. These experiments show ability grow along nonpolar (11 2 0) semipolar 2) orientation, depending orientations...