A5075409423- 2D Materials and Applications
- Photonic and Optical Devices
- Neural Networks and Reservoir Computing
- Optical Network Technologies
- MXene and MAX Phase Materials
- Perovskite Materials and Applications
- Semiconductor Lasers and Optical Devices
- Advanced Fiber Optic Sensors
- Nanowire Synthesis and Applications
- Graphene research and applications
- Orbital Angular Momentum in Optics
- Advanced Photonic Communication Systems
- Mechanical and Optical Resonators
- Advanced Memory and Neural Computing
- Plasmonic and Surface Plasmon Research
- Gas Sensing Nanomaterials and Sensors
- Phase-change materials and chalcogenides
- Advanced Fiber Laser Technologies
- Optical Wireless Communication Technologies
- Photonic Crystals and Applications
- Advanced Thermoelectric Materials and Devices
- Advanced MEMS and NEMS Technologies
- Advanced Semiconductor Detectors and Materials
- Antenna Design and Optimization
- Sensor Technology and Measurement Systems
University of Florida
2023-2025
George Washington University
2019-2023
National Institute of Standards and Technology
2022
Abstract With the increasing need for large volumes of data processing, transport, and storage, optimizing trade-off between high-speed energy consumption in today’s optoelectronic devices is getting increasingly difficult. Heterogeneous material integration into silicon- nitride-based photonics has showed promise, albeit at expense millimeter-to centimeter-scale footprints. The hunt an electro-optic modulator that combines high speed, efficiency, compactness to support component density...
Graphene, renowned for its exceptional electrical, optical, and mechanical properties, takes center stage in the realm of next-generation electronics. In this paper, we provide a thorough investigation into comprehensive fabrication process graphene field-effect transistors. Recognizing pivotal role quality plays determining device performance, explore many techniques metrological methods to assess ensure superior layers. addition, delve intricate nuances doping examine effects on electronic...
Photodetectors converting light signals into detectable photocurrents are ubiquitously in use today. To improve the compactness and performance of next-generation devices systems, low dimensional materials provide rich physics to engineering light–matter interaction. based on two-dimensional (2D) material van der Waals heterostructures have shown high responsivity compact integration capability, mainly visible range due their intrinsic bandgap. The spectral region near-infrared (NIR) is...
Van der Waals (vdWs) heterostructures, assembled by stacking of two-dimensional (2D) crystal layers, have emerged as a promising new material system for high-performance optoelectronic applications, such thin film transistors, photodetectors, and light-emitters. In this study, we showcase an innovative device that leverages strain-tuning capabilities, utilizing MoS2/Sb2Te3 vdWs p-n heterojunction architecture designed explicitly photodetection across the visible to near-infrared spectrum....
Abstract Advancements in optical communications have increasingly focused on leveraging spatial-structured beams such as orbital angular momentum (OAM) for high-capacity data transmission. Conventional electronic convolutional neural networks exhibit constraints efficiently demultiplexing OAM signals. Here, we introduce a hybrid optical-electronic network that is capable of completing Fourier optics convolution and realizing intensity-recognition-based multiplexed under variable simulated...
Layered two-dimensional (2D) materials provide a wide range of unique properties as compared to their bulk counterpart, making them ideal for heterogeneous integration on-chip interconnects. Hence, detailed understanding the loss and index change on Si integrated platform is prerequisite advances in opto-electronic devices impacting optical communication technology, signal processing, possibly photonic-based computing. Here, we present an experimental guide characterize transition metal...
The exotic properties of two-dimensional materials and heterostructures, built by forming heterogeneous multi-layered stacks, have been widely explored across several subject matters following the goal to invent, design, improve applications enabled these materials. Successfully harvesting unique effectively increasing yield manufacturing material-based devices for achieving reliable repeatable results is current challenge. scientific community has introduced various experimental transfer...
Recent research and development in the mid-infrared (IR) wavelength range (2-20 um) for a variety of applications, such as trace gas monitoring, thermal imaging, free space communications have shown tremendous fascinating progress. MXenes, which mainly refer to two-dimensional (2D) transition-metal carbides, nitrides, carbonitrides, drawn lot interest since their first investigation 2011. MXenes project enormous potential use optoelectronics, photonics, catalysis, energy harvesting fields...
Here we demonstrate Tungsten Disulfide (WS<sub>2</sub>) integrated silicon nitride photodetector, and experimentally tested the responsivity of 0.32 A/W. The spectroscopic results using PL Raman mapping were used to understand strain effect on excitonic bandgap by studying characteristics like excitons, trions, E<sup>1</sup><sub>2g</sub>, A<sup>1</sup><sub>g</sub> opto-electronic response. We show high potential for flexible sensors spectral resolution sensing.
The rapid development of nanophotonic technologies has put forward higher requirements for optoelectronic devices, including ultra-small footprints, high-speed operation, high efficiency, and low power consumption. Optoelectronics based on emerging materials can provide the material framework that keep pace with future technological demands. Here we will share our latest innovations device demonstrations using low-dimensional towards discovering high-performance photodetector electro-optic...
Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional (2D) materials, resulting in an effective and continuous tuning physical properties. Ad hoc straining 2D materials has demonstrated state art photonic devices including efficient photodetectors at telecommunication frequencies, enhanced-mobility transistors, on-chip single photon sources, for example. However, order gain insights into underlying mechanism required enhance performance...
Here we propose using phase change material Sb 2 Se 3 for non-volatile, rapid focusing and defocusing. Due to its unique capabilities equipped with a resilient ITO microheater, showcasing progress towards dynamic meta lenses beamforming applications.
As Internet-of-Things (IoT) devices continue to grow rapidly in number, developing energy-efficient memory solutions has become critically important. This paper introduces an innovative Phase Change Memory (PCM) architecture that can significantly reduce energy consumption IoT devices. After highlighting the energy-inefficiency of current designs, we explore possibilities leveraging PCM. We demonstrate benefits exploiting PCM are dependent on working frequency CPU and show how surpass with...
Here we presented a waveguide integrated plasmonic MoTe 2 based photodetector with the new design to accomplish high speed (300 GHz) energy efficient (0.8 AW -1 ) detection of light at 1310 nm.
Here, we demonstrate the fabrication of tungsten di-sulfide integrated photodetector on silicon nitride photonic platform. We observe high responsivity ~100mA/W at exciton wavelength (~625 nm) due to strong photo-absorption.
Here, we demonstrate an efficient electro-absorption modulator (EAM) based on few-layered MoTe2 into a silicon photonics platform for the 1st time. The exhibits extinction ratio of ~0.1dB/m at 1310 nm.
We present a strain-tunable device using MoS2/Sb2Te3 vdWs p-n heterojunction for photodetection. The shows low dark current (few picoamperes), high photoresponsivity (0.12 A•W–1), and remarkable tunability (up to 0.3% compressive strain) in the visible near-infrared spectrum.
An electrically controllable ITO metasurface is a breakthrough in light manipulation. Theoretical frequency response 15–100 GHz for this cutting-edge technology. This technique might revolutionize high-speed optical data processing and enable integration with Vertical-Cavity Surface-Emitting Lasers (VCSELs) Photonic Integrated Circuits (PICs).
We investigate the effect of local non-homogeneous strain on WS 2 monolayer when integrated a SiN photonic waveguide showing strong spectral responsivity(80mA/W) at exciton wavelength(620nm) and shift ~10nm in photodetector device.
Here, we're pioneering a novel approach in photonics, targeting the development of ultra-low power communication systems and advanced sensing technologies. Central to our strategy is implementation unique zig-zag structure, designed achieve femtojoule (fJ) per bit efficiency. A key innovation integration unidirectional coupling through on-chip isolation, seamlessly connecting Transverse Coupled Cavity VCSEL (TCCVCSEL) modulator then waveguide. This project has wide-ranging implications,...
Binarized neural networks offer substantial reductions in memory and computational requirements compared to full precision networks. However, conventional CMOS-based hardware implementations still face challenges with resilience for deployment harsh environments like space. This paper proposes an optical XOR-based accelerator binarized enable low power resilient operation. The logic gates rely on wavelength-specific intensity propagation rather than absolute levels. provides inherent...
2D materials and specifically Transition Metal Dichalcogenides have received much attention as photoactive in photodetectors. These possess attractive properties, including a direct bandgap the visible range mechanical resilience to strain, making them an material for flexible Here we demonstrate 4x4 pixel photodetector arrays on non-flexible substrates based mechanically exfoliated flakes of MoS2. The minimum pitch between array pixels 9.5 µm both vertical horizontal directions....