A5102740266- Quantum Dots Synthesis And Properties
- Chalcogenide Semiconductor Thin Films
- Organic Electronics and Photovoltaics
- Ferroelectric and Piezoelectric Materials
- Conducting polymers and applications
- Semiconductor materials and devices
- Organic Light-Emitting Diodes Research
- Thin-Film Transistor Technologies
- Perovskite Materials and Applications
- Microwave Dielectric Ceramics Synthesis
- Multiferroics and related materials
- Copper-based nanomaterials and applications
- Nanowire Synthesis and Applications
- ZnO doping and properties
- Phase-change materials and chalcogenides
- Semiconductor materials and interfaces
- Acoustic Wave Resonator Technologies
- Catalytic Processes in Materials Science
- High-Temperature Coating Behaviors
- Integrated Circuits and Semiconductor Failure Analysis
- Transition Metal Oxide Nanomaterials
- Liquid Crystal Research Advancements
- Graphene research and applications
- Copper Interconnects and Reliability
- Crafts, Textile, and Design
Dankook University
2013-2024
Chonnam National University
2009
Electronics and Telecommunications Research Institute
2003-2006
Virginia Tech
1997-2003
We report on the thin films of solid–solution material (1−x)SrBi2Ta2O9−xBi3Ti(Ta1−yNby)O9 fabricated by a modified metalorganic solution deposition technique for ferroelectric random access memory devices. Using technique, it was possible to obtain pyrochlore free crystalline at an annealing temperature as low 600 °C. The layered perovskite materials helped us significantly improve properties, higher Pr and Tc, compared SrBi2Ta2O9; leading candidate applications. For example, with 0.7...
Polycrystalline SrBi2Ta2O9 thin films having a layered-perovskite structure were fabricated by modified metalorganic solution deposition technique using room temperature processed alkoxidecarboxylate precursor solution. It was possible to obtain complete perovskite phase at an annealing of 650 °C and no pyrochlore observed even up 600 °C. In addition, the annealed 750 exhibited better structural, dielectric, ferroelectric properties than those reported previous techniques. The effects...
The crystallization behavior of antimony(Sb)-excess was examined. Sb-excess GST showed and melting temperatures 205 550°C, respectively, slightly higher lower values than stoichiometric compounds. It also a substantially different compared to the composition. resulting GeSbTe thin film grain growth dominated behavior.
Abstract Black phosphorus (BP) is considered among the promising material for electronic devices. A wide range of studies involving properties, exfoliation, and applications thin‐layered BP nanosheets (NSs) has been put forward. Along with understanding properties NSs, efforts to enlighten intrinsic characteristics film should be also accompanied extend material. In this study, a facile efficient inkjet printing approach introduced fabricate patterned films. This successfully addresses...
Thin films of solid-solution material 0.7SrBi2Ta2O9–0.3Bi3TaTiO9 (0.7SBT–0.3BTT) were fabricated on n+-polycrystalline (n+-poly) Si substrates by a metalorganic solution deposition technique at low processing temperature 650 °C using Pt–Rh/Pt–Rh–Ox electrode-barrier structure. The structure was deposited an in situ reactive radio frequency sputtering process. electrodes had smooth and fine-grained microstructure excellent diffusion barriers between the 0.7SBT–0.3BTT thin film substrate....
We report on the crystallization and electrical properties of Bi3.47La0.85Ti3O12 (BLT) thin films for possible ferroelectric non-volatile memory applications. The film were found to be strongly dependent process conditions especially intermediate heat treatment conditions. crystallographic orientation showed sharp changes at rapid thermal annealing (RTA) temperature 450°C. Below 450°C, BLT have <117 > while they preffered c-axis above that RTA first coating layer play a major role in...
TiO2 thin films as electron-transporting layers for planar-type perovskite solar cells were prepared by atomic layer deposition (ALD). Perovskite MAPbI3−xClx formed on the ALD sequential vapor processing. The resulting uniform and pinhole-free, with an average grain size of ∼370 nm. high crystallinity was also confirmed, optical bandgap ∼1.58 eV. Planar n-i-p using vapor-grown perovskite. temperature thickness optimized, in a superior efficiency ∼11.6% compared to conventional TiO2.
For the writing current reduction, we firstly proposed and successfully manufactured phase change memory device with U-shaped heater (PCM-U) device, in which TiN surrounds Ge2Sb2Te5 (GST). The experimental results clearly indicate that PCM-U has noticeably shorter SET operation time 50% smaller RESET current, compared conventional. We suggest improved properties of are due to overlap programmable volume.
Achieving high efficiency in graphene production and printing process simultaneously is challenging, but it needs to be addressed as critical for realizing the commercial viability of printed devices. This study successfully substantiates these requirements by significantly improving subsequently developing an inkjet-printable ink that enables rapid formation percolation network flakes. The integration a flow coil reactor into ultrasonic bath results scalable production, with productivity up...
60 nm thick (SBT) thin films were fabricated using plasma-enhanced atomic layer deposition (ALD) with an alternating supply of single cocktail source and oxygen plasma. The linear relationship between the number cycles film thickness a constant rate pulse time suggests that self-limiting process has distinct characteristics ALD was achieved. annealed at 750°C completely crystallized to layer-structured perovskite phase. SBT capacitors showed excellent ferroelectric switching properties. Low...
This letter reports the effects of post thermal annealing in H 2 O on structural and optical properties Zinc oxide (ZnO) films deposited Si substrate. The were investigated by atomic force microscopy (AFM), X-ray diffraction (XRD), transmission electron (TEM) photoluminescence (PL) measurements. Our experiments demonstrated that ZnO have better crystal quality at high temperatures there are no emission peaks even visible region annealed 900°C. After 900°C, however, surface roughness was...