A5010519196- Semiconductor materials and devices
- Copper Interconnects and Reliability
- Electron and X-Ray Spectroscopy Techniques
- Semiconductor materials and interfaces
- Electronic and Structural Properties of Oxides
- Advancements in Semiconductor Devices and Circuit Design
- Plant-derived Lignans Synthesis and Bioactivity
- Surface and Thin Film Phenomena
- Integrated Circuits and Semiconductor Failure Analysis
- Enzyme Structure and Function
- Advanced Chemical Physics Studies
- Advanced Materials Characterization Techniques
- Silicon Nanostructures and Photoluminescence
- Synthetic Organic Chemistry Methods
- Biochemical and Molecular Research
- Advanced X-ray Imaging Techniques
- Biological Activity of Diterpenoids and Biflavonoids
- Ferroelectric and Piezoelectric Materials
- Dielectric materials and actuators
- Magnetic Properties and Synthesis of Ferrites
- Phytochemistry and Biological Activities
- Diet, Metabolism, and Disease
- Data Quality and Management
- Optical Coatings and Gratings
- Big Data Technologies and Applications
Rigaku (United States)
2024
Rigaku (Japan)
2024
University of Cambridge
2011-2023
Intel (United States)
2012-2022
Intel (United Kingdom)
2010-2021
The University of Texas at Austin
2019-2020
University of South Florida
2019-2020
University of Missouri–Kansas City
2020
Technische Universität Braunschweig
2016
Saarland University
2004-2010
In this paper, Bias-temperature instability (BTI) characterization on 45nm high-K + metal-gate (HK+MG) transistors is presented and degradation mechanism discussed. Transistors with an unoptimized HK film stack in the early development phase exhibited pre-existing traps large amount of hysteresis that was consistent literature. The optimized final process demonstrated NMOS PMOS BTI HK+MG are better than SiON at matched E-fields comparable targeted 30% higher use fields. also showed no due to...
This paper discusses the historical role that SiGe has played in driving CMOS scaling roadmap, including discussion of NMOS biaxial strain and PMOS uniaxial strain. The also potential future Ge or may play as a high mobility replacement for Si channel. Challenges such poor quality germanium oxide small bandgap are reviewed light recent developments (high-k metal gate, ultra-thin body devices) MOSFET scaling.
Abstract A new method for the synthesis of glycosides is described. Epipodophyllotoxin ( 4 ) reacts with 2,3,4,6‐tetra‐O‐acetyl‐β‐ D ‐glucopyranose in presence BF 3 ‐etherate at low temperature to yield tetra‐O‐acetyl‐epipodophyllotoxin‐β‐ ‐glucopyranoside 6 ). This compound, which sensitive acid and base, can be converted into free glucoside 8 by zinc acetate catalysed methanolysis. Glycosidation podophyllotoxin 1 occurs under same conditions but associated an inversion C‐1 aglycone moiety,...
We have investigated the structural and compositional changes that are induced by segregation of substrate Mg to surface $1\ensuremath{\mu}$m-thick ${\mathrm{Fe}}_{3}$O${}_{4}(001)$ films on MgO(001). The thin been grown with plasma-assisted MBE. Characterization reflection high-energy electron diffraction, x-ray superconducting quantum interference device magnetometry, show slightly strained, single-crystalline ${\mathrm{Fe}}_{3}$O${}_{4}$ films. For studies, we combined low-energy scanning...
The electronic behavior of the Au 5d bands in ordered and disordered ${\mathrm{Cu}}_{3}$Au has been investigated with x-ray-absorption near-edge structure (XANES) Al K\ensuremath{\alpha} x-ray (1486.6 eV) photoemission (XPS) measurements. XANES XPS results clearly show that loses character (count) upon formation both phases count depletes more phase than phase. In addition, hole population is found to be nonstatistical ([${\mathit{h}}_{5/2}$]:[${\mathit{h}}_{3/2}$]1:1) alloys as compared a...
Abstract Podorhizol‐β‐ D ‐glucoside ( 1 ) = lignan F), C 28 H 34 O 13 , a new from the roots and rhizomes of Podophyllum species, represents one rare glucosides which are cleaved by acids as well bases. Acid hydrolysis furnished intact aglycone podorhizol 3 in addition two cyclisation products characterized desoxy‐podophyllotoxin 10 (−)‐isodesoxypodophyllotoxin 11 ), respectively. Base catalysed fission glucoside yielded ‐glucose anhydropodorhizol 9 ). Podorhizol was smoothly oxidized to...
Abstract 4′‐Demethylepipodophyllotoxin‐β‐ D ‐glucopyranoside (VIII) and 4′‐demethylepipodophyllotoxin‐β‐ ‐galactopyranoside (X) have been synthesized by reaction of the aglycones III IV with corresponding tetra‐O‐acetyl‐β‐ ‐hexopyranose in presence BF 3 ‐etherate. The suggested configurations at C‐1 aglycone moiety new glycosides could be confirmed NMR.‐spectra.
Electrical leakage in low-k dielectric/Cu interconnects is a continuing reliability concern for advanced <22 nm technologies. One mechanism deserving increased attention electron transport across the Cu/dielectric capping layer interface. The Schottky barrier formed at this interface an important parameter understanding charge In report, we have utilized x-ray photoelectron spectroscopy to investigate between polished Cu substrates and standard a-SiC(N):H dielectric layers deposited...
On platinum zinc surfaces at 150–300 K, CO adsorbs only on Pt sites. molecules bonded to these sites exhibit a significantly lower adsorption energy (4–8 kcal/mol) and larger O 1s binding (0.2–0.4 eV) than clean Pt(111). To explain changes in the Pt↔CO interaction, we have examined electronic properties of Zn/Pt(111) using core valence level photoemission, ab initio self-consistent-field calculations. At 80 Zn atoms deposited Pt(111) remain top surface. Above 400 alloy formation occurs. In...
Abstract 4′‐Demethylepipodophyllotoxin (III) has been synthesized by epimerisation of 4′‐demethylpodophyllotoxin (I) via the corresponding chloride II. An improved method for preparation III developed selective ether cleavage easily available podophyllotoxin (V) using bromoderivatives VI and VII as intermediates.
In order to understand the fundamental mechanisms involved in electrical leakage low-k/Cu interconnects, we have utilized x-ray photoelectron spectroscopy determine Schottky barrier present at interfaces formed by plasma enhanced chemical vapor deposition of low-k a-SiOxCy:H thin films on polished Cu substrates. We find Barrier this interface range widely from 1 >4 eV and be dependent amount network carbon incorporated into a-SiOC:H films.
An Al–W-silica integrated circuit interconnect sample was thinned to several μm and scanned across a 200 nm focal spot of Fresnel zone plate operating at photon energy 1573 eV. The experiment performed on beamline 2-ID-B the Advanced Photon Source, third-generation synchrotron facility. Thirteen projections were acquired over angular range ±69.2°. At least 301×301 pixels each angle with step size 77×57 nm. A three-dimensional image an approximate uncertainty 400 reconstructed from projection...
Electron tunneling into amorphous germanium films was studied using Al–Al2O3–Ge tunnel junctions. A ``conductance well'' observed, which is related to the band edges of film and its surface potential. Structure in conductance well interpreted as gap states. The results suggest a possible tool for study structure materials.
Beryllium oxide (BeO) is a wide band gap alkaline earth material that has recently shown significant promise as high-k dielectric in Si and III-V metal–oxide–semiconductor field effect transistor devices. However, many of the basic properties for BeO thin films utilized these devices have not been reported or remain question. In this regard, authors report an investigation chemical, physical, electrical, mechanical formed via atomic layer deposition (ALD). Combined Rutherford backscattering...
For applications such as low-power tunneling transistors and memory, lasers, qubits, spintronics, there is interest in using strain to enhance carrier mobility semiconductors. This experimental theoretical study investigates transport highly strained germanium, which multivalley electron conduction emerges. Surprisingly, all occurs via the L valley Ge for biaxial tensile below 1.6%, while above contribution from \ensuremath{\Gamma} increases, with negligible contributions underlying template.
The growth of epitaxial metal–oxide films on lattice-mismatched metal substrates often results in the formation unique overlayer structures. In particular, chromium oxide grown Pt(111) exhibit a p(2×2) symmetry through first two monolayers which is followed by (√3×√3)R30° phase that attributed to Cr2O3(0001) overlayer. Ultraviolet photoelectron spectroscopy measurements have been performed CrOx/Pt(111) system. electronic structures CrO2, Cr2O3, and Cr3O4 were calculated using linear...
In this paper, we present extensive breakdown results on our 45nm HK+MG technology. Polarity dependent and SILC degradation mechanisms have been identified are attributed gate substrate injection effects. Processing conditions were optimized to achieve comparable TDDB lifetimes structures at 30% higher E-fields than SiON with a reduction in growth. Extensive long-term stress data collection change voltage acceleration reported.
The crystal structure of the title compound (I; R = Br) has been determined in order to provide conclusive evidence for absolute configuration podophyllotoxin H) and related lignans. was from diffractometer data by heavy-atom method refined least-squares techniques 0·098 2043 observed reflections. Crystals are monoclinic, space group P21, with Z= 4 a unit cell dimensions a= 1321(4), b= 1558(2), c= 1168(5) pm, β= 102·0(2)°.
Abstract The synthesis of podophyllotoxin‐β‐ D ‐glucoside (III), an antimitotic lignan compound isolated from Podophyllum species, is reported. Reaction podophyllotoxin (I) with tetra‐O‐acetyl‐α‐ ‐glucopyranosyl bromide in acetonitrile the presence Hg(CN) 2 yields tetra‐O‐acetyl‐podophyllotoxin‐α‐ (II), which converted into (III) by ZnCl ‐catalysed methanolysis. This transesterification advantageous method for preparation glycosides, sensitive to base and acid, their corresponding acetyl...