A5100676391- ZnO doping and properties
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and devices
- Silicon Nanostructures and Photoluminescence
- Ga2O3 and related materials
- Semiconductor materials and interfaces
- Nanowire Synthesis and Applications
- Gas Sensing Nanomaterials and Sensors
- Photonic and Optical Devices
- Graphene research and applications
- Thermal properties of materials
- Copper-based nanomaterials and applications
- Advanced Memory and Neural Computing
- Advanced Thermoelectric Materials and Devices
- Random lasers and scattering media
- 2D Materials and Applications
- Electronic and Structural Properties of Oxides
- Quantum and electron transport phenomena
- Advancements in Semiconductor Devices and Circuit Design
- Thermal Radiation and Cooling Technologies
- GaN-based semiconductor devices and materials
- Ferroelectric and Negative Capacitance Devices
- Photonic Crystals and Applications
- Quantum Dots Synthesis And Properties
- Diamond and Carbon-based Materials Research
Sun Yat-sen University
2025
Qingdao Agricultural University
2025
University of California, Riverside
2015-2024
Zhejiang University of Technology
2019-2024
Sichuan University
2023-2024
Biocat
2023
Heilongjiang Bayi Agricultural University
2015-2023
Shaoyang University
2021-2022
Weatherford College
2021
Chongqing University
2014-2018
The carrier recombination processes in ZnO quantum dots ($\ensuremath{\sim}4\phantom{\rule{0.3em}{0ex}}\mathrm{nm}$ diameter), nanocrystals ($\ensuremath{\sim}20\phantom{\rule{0.3em}{0ex}}\mathrm{nm}$ diameter) and bulk crystal have been studied using photoluminescence (PL) spectroscopy the temperature range from $8.5\phantom{\rule{0.3em}{0ex}}\text{to}\phantom{\rule{0.3em}{0ex}}300\phantom{\rule{0.3em}{0ex}}\mathrm{K}$. obtained experimental data suggest that ultraviolet PL originates of...
Electrically pumped ZnO quantum well diode lasers are reported. Sb-doped p-type ZnO/Ga-doped n-type with an MgZnO/ZnO/MgZnO embedded in the junction was grown on Si by molecular beam epitaxy. The diodes emit lasing at room temperature a very low threshold injection current density of 10 A/cm2. mechanism is exciton-related recombination and feedback provided close-loop scattering from closely packed nanocolumnar grains formed Si.
Neonicotinoid insecticides have been widely applied in modern agriculture to improve crop productivity, but their residues adverse impacts on the environment and human health. Hence, address these issues, a portable self-powered/colorimetric dual-mode sensing platform was developed for simple, rapid, precise, sensitive on-site detection of acetamiprid (ATM) vegetables. In this case, multifunctional bioconjugate with specific recognition capability, excellent enzyme-like activity, loading...
Reproducible Sb-doped p-type ZnO films were grown on n-Si (100) by electron-cyclotron-resonance-assisted molecular-beam epitaxy. The existence of Sb in ZnO:Sb was confirmed low-temperature photoluminescence measurements. An acceptor-bound exciton (A°X) emission observed at 3.358 eV 8 K. acceptor energy level the dopant is estimated to be 0.2 above valence band. Temperature-dependent Hall measurements performed films. At room temperature, one sample exhibited a low resistivity 0.2Ωcm, high...
We investigated photoluminescence (PL) from reliable and reproducible Sb-doped p-type ZnO films grown on n-Si (100) by molecular-beam epitaxy. Well-resolved PL spectra were obtained completely dopant-activated samples with hole concentrations above 1.0×1018cm−3. From free electron to acceptor transitions, binding energy of 0.14 eV is determined, which in good agreement analytical results the temperature-dependent measurements. Another broad peak at 3.050 eV, shifts lower higher temperatures,...
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> In recent years, quantum dots have been successfully grown by self-assembling processes. For optoelectronic device applications, the quantum-dot structures advantages such as reduced phonon scattering, longer carrier lifetime, and lower detector noise due to low-dimensional confinement effect. Comparing traditional III-V other materials, self-assembled Ge on Si substrates a potential be...
Cu-doped p-type ZnO films are grown on c-sapphire substrates by plasma-assisted molecular beam epitaxy. Photoluminescence (PL) experiments reveal a shallow acceptor state at 0.15 eV above the valence band edge. Hall effect results indicate that growth condition window is found for formation of thin films, and best conductivity achieved with high hole concentration 1.54 × 1018 cm–3, low resistivity 0.6 Ω cm, moderate mobility 6.65 cm2 V–1 s–1 room temperature. Metal oxide semiconductor...
Resistive memory is one of the most promising candidates for next-generation nonvolatile technology due to its variety advantages, such as simple structure and low-power consumption. Bipolar resistive switching behavior was observed in epitaxial ZnO nanoislands with base diameters heights ranging around 30 40 nm, respectively. All four different states (initial, electroformed, ON, OFF) nanoscale memories were measured by conductive atomic force microscopy immediately after voltage sweeping...
Waste heat has been regarded as one of the most important renewable and green energy sources, its widespread reclamation could help to reduce negative impacts global warming crisis.
Understanding wildlife-pathogen interactions is crucial for mitigating zoonotic risk. Through meta-transcriptomic sequencing we profiled the infectomes of 1,922 samples from 67 mammalian species across China, uncovering a remarkable diversity viral, bacterial, fungal, and parasitic pathogens. Of 195 pathogens identified, 62 were novel, including bi-segmented coronavirus in diseased lesser pandas, which propose represents new genus - Zetacoronavirus. The orders Carnivora Rodentia exhibited...
An experimental proof-of-principle of an enhanced Z3DT (thermoelectric figure merit) is demonstrated using (001) oriented Si/Ge superlattices. The highest value the at 300 K for a Si(20 Å)/Ge(20 Å) superlattice 0.1 κ=5 Wm−1 K−1, in-plane thermal conductivity, which factor seven enhancement relative to estimated Z3DT=0.014 bulk Si. good agreement between experiment and theory validates our modeling approach (denoted as “carrier pocket engineering”) design superlattices with values Z3DT....
Thermoelectric properties, i.e., thermal conductivity, electrical and the Seebeck coefficient, have been measured in directions parallel (in-plane) perpendicular to interface of an n-type Si(80 Å)/Ge(20 Å) superlattice. A two-wire 3ω method is employed measure in-plane cross-plane conductivities. The coefficient deduced by using a differential measurement between superlattice reference samples conductivity determined through modified transmission-line method. Si/Ge 5–6 times higher than one,...
We report the ability to arrange self-organized Ge islands on patterned Si (001) substrates. Selective epitaxial growth of is carried out with gas-source molecular beam epitaxy form mesas followed by subsequent growth. Self-aligned and regularly spaced are formed 〈110〉-oriented ridges stripe mesas. A mono-modal size distribution has been observed ridges. Using preferential nucleation sites allows us place at predetermined positions. The controlled arrangement nanostructures offers potential...
ZnO p-n homojunction light emitting diodes were fabricated based on p-type Sb-doped ZnO∕n-type Ga-doped thin films. Low resistivity Au∕NiO and Au∕Ti contacts formed top of n-type layers, respectively. exhibited a low specific 7.4×10−4Ωcm2. The yielded strong near-band-edge emissions in temperature-dependent injection current-dependent electroluminescence measurements.
p-Type ZnO microwires were first synthesized by a simple chemical vapor deposition method using Na as the dopant source. doping was confirmed electrical transport in single-wire field-effect transistors and low-temperature photoluminescence. The carrier mobility of estimated to be approximately 2.1 cm(2) V(-1) S(-1).
Antimony (Sb) doping was used to realize p-type ZnO films on n-Si (100) substrates by molecular beam epitaxy. These samples were fabricated into p-n heterojunction diodes. behavior of Sb-doped studied carrying out I-V and capacitance-voltage (C-V) measurements. curves showed rectifying similar a Schottky diode with turn-on voltage around 2.4V, which is consistent the barrier about 2.2V obtained from C-V characterization. Good photoresponse in UV region obtained, further proved that Sb could...
Phosphorus-doped p-type ZnO films were grown on r-plane sapphire substrates using molecular-beam epitaxy with a solid-source GaP effusion cell. X-ray diffraction spectra and reflection high-energy electron patterns indicate that high-quality single crystalline (112¯0) obtained. Hall resistivity measurements show the phosphorus-doped have high hole concentrations low resistivities at room temperature. Photoluminescence (PL) 8 K reveal dominant acceptor-bound exciton emission an energy of...
Heterojunction light emitting diodes (LEDs) were fabricated by making Au∕Ni top Ohmic contacts on Sb-doped p-type ZnO film with low specific contact resistivity and Al∕Ti back n-type Si substrate. Near-band edge deep-level emissions observed from the LED devices at both temperatures room temperature, which is due to band-to-band band-to-deep level radiative recombinations in ZnO, respectively. The electroluminescence precisely match those of photoluminescence spectra indicating that layer...
An electrically pumped ZnO homojunction random laser diode based on nitrogen‐doped p‐type nanowires is reported. Nitrogen‐doped are grown a thin film silicon substrate by chemical vapor deposition without using any metal catalyst. The behavior studied output characteristics and transfer characteristic of the nanowire back‐gated field‐effect transistor, as well low‐temperature photoluminescence. formation p–n junction confirmed current–voltage electron beam‐induced current. nanowire/thin‐film...
ZnO p-n homojunctions based on Sb-doped p-type nanowire array and n-type film were grown by combining chemical vapor deposition (for nanowires) with molecular-beam epitaxy film). Indium tin oxide Ti/Au used as contacts to the nanowires film, respectively. Characteristics of field-effect transistors using channels indicate conductivity nanowires. Electron beam induced current profiling confirmed existence homojunction. Rectifying I-V characteristic showed a turn-on voltage around 3 V. Very...
Abstract Van der Waals materials have received a great deal of attention for their exceptional layered structures and exotic properties, which can open up various device applications in nanoelectronics. However, situ epitaxial growth dissimilar van remains challenging. Here we demonstrate solution fabricating heterostructures. Graphene/hexagonal boron nitride (h-BN) heterostructures were synthesized on cobalt substrates by using molecular beam epitaxy. Various characterizations carried out...
Ultraviolet (UV) photodetectors based on heterojunctions of conventional (Ge, Si, and GaAs) wide bandgap semiconductors have been recently demonstrated, but achieving high UV sensitivity visible-blind photodetection still remains a challenge. Here, we utilized semitransparent film p-type semiconducting single-walled carbon nanotubes (SC-SWNTs) with an energy gap 0.68 ± 0.07 eV in combination molecular beam epitaxy grown n-ZnO layer to build vertical p-SC-SWNT/n-ZnO heterojunction-based...
A highly flexible micro-supercapacitor based on a pen ink-carbon-fiber thread structure is fabricated with excellent characteristics of lightweight, small volume, flexibility and portability. By integrating triboelectric nanogenarator, the micro-supercapacitors are charged used to power LEDs, demonstrating its feasibility as an efficient storage component for self-powered micro/nanosystems.