Benlin Hu

ORCID: 0000-0001-6576-2485
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About
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Research Areas
  • Conducting polymers and applications
  • Advanced Sensor and Energy Harvesting Materials
  • Advanced Memory and Neural Computing
  • Organic Electronics and Photovoltaics
  • Dielectric materials and actuators
  • Ferroelectric and Piezoelectric Materials
  • Perovskite Materials and Applications
  • Luminescence and Fluorescent Materials
  • Synthesis and properties of polymers
  • Ferroelectric and Negative Capacitance Devices
  • Electronic and Structural Properties of Oxides
  • Transition Metal Oxide Nanomaterials
  • Molecular Junctions and Nanostructures
  • Acoustic Wave Resonator Technologies
  • Nonlinear Photonic Systems
  • Silicone and Siloxane Chemistry
  • Mass Spectrometry Techniques and Applications
  • Organic Light-Emitting Diodes Research
  • Plasmonic and Surface Plasmon Research
  • X-ray Diffraction in Crystallography
  • Synthesis and Properties of Aromatic Compounds
  • Crystallography and molecular interactions
  • Epoxy Resin Curing Processes
  • Crystallization and Solubility Studies
  • Electrohydrodynamics and Fluid Dynamics

Ningbo Institute of Industrial Technology
2010-2025

Chinese Academy of Sciences
2010-2025

University of Chinese Academy of Sciences
2024

Max Planck Institute for Polymer Research
2017-2022

University of Applied Sciences Mainz
2018

Nanyang Technological University
2014-2015

Singapore Polytechnic
2014-2015

University of Houston
2005-2010

Hong Kong Baptist University
2005-2010

Institute of Physics, Academia Sinica
1994

Conductance quantization phenomena are observed in oxide-based resistive switching memories. These can be understood by the formation and disruption of atomic-scale conductive filaments insulating oxide matrix. The quantum conductance effect artificially modulated controlling electrical parameters Set Reset processes, used for multi-level data storage help understand design one-dimensional structures at atomic scales various materials systems. Detailed facts importance to specialist readers...

10.1002/adma.201201506 article EN Advanced Materials 2012-06-18

Ferroelectrics are an integral component of the modern world and importance in electrics, electronics, biomedicine. However, their usage emerging wearable electronics is limited by inelastic deformation. We developed intrinsically elastic ferroelectrics combining ferroelectric response resilience into one material slight cross-linking plastic polymers. The precise can realize complex balance between crystallinity resilience. Thus, we obtained with a stable under mechanical deformation up to...

10.1126/science.adh2509 article EN Science 2023-08-03

A multi-redox polyoxometalate-based hybrid polymer has been demonstrated to show multilevel resistive switching memory behaviors.

10.1039/c4sc00823e article EN Chemical Science 2014-01-01

An all‐oxide transparent resistive random access memory (T‐RRAM) device based on hafnium oxide (HfO x ) storage layer and indium‐tin (ITO) electrodes is fabricated in this work. The demonstrates not only good optical transmittance but also a forming‐free bipolar switching behavior with room‐temperature R OFF / ON ratio of 45, excellent endurance ≈5 × 10 7 cycles long retention time over 6 s. More importantly, the HfO RRAM carries great ability anti‐thermal shock wide temperature range K to...

10.1002/adfm.201303274 article EN Advanced Functional Materials 2013-11-27

This review covers the recent progress in organic small molecules and inorganic–organic hybrid polymer based ORM.

10.1039/c5tc02080h article EN Journal of Materials Chemistry C 2015-01-01

The uniformity of operating parameters in organic nonvolatile memory devices is very important to avoid false programming and error readout problems. In the present work, we fabricated an resistive-switching based on protonic-acid-doped polyazomethine (PA-TsOH), which demonstrates excellent operative multilevel storage capability. deliberate tuning resistance states can be attributed electric-field-controlled molecular doping imine-containing polymers.

10.1021/ja307933t article EN Journal of the American Chemical Society 2012-10-09

A comparison of the asymmetric OFF-state current-voltage characteristics between Cu/ZnO/Pt and Cu/ZnO/Al-doped ZnO (AZO) electrochemical metallization memory (ECM) cells demonstrates that Cu filament rupture rejuvenation occur at ZnO/Pt (or AZO) interface, i.e., cathodic interface. Therefore, is most likely to have a conical shape, with wider narrower diameters formed anodic interfaces, respectively. It inferred growth starts anode surface stops cathode surface. Our results indicate...

10.1063/1.3683523 article EN Applied Physics Letters 2012-02-13

Abstract N‐substituted heteroacenes have been widely used as electroactive layers in organic electronic devices, and only a few of them investigated resistive memory devices. Here, novel heteroacene 2‐(4′‐(diphenylamino)phenyl)‐4,11‐bis((triisopropylsilyl)ethynyl)‐1H‐imidazo[4,5‐b]phenazine ( DBIP ) has designed, synthesized, characterized. Sandwich‐structure devices based on fabricated the show non‐volatile stable character with good endurance performance.

10.1002/asia.201301547 article EN Chemistry - An Asian Journal 2014-01-02

With the emergence of wearable electronics, ferroelectrics are poised to serve as key components for numerous potential applications. Currently, intrinsically elastic featuring a network structure through precise "slight cross-linking" approach have been realized. The resulting demonstrate combination stable ferroelectric properties and remarkable resilience under various strains. However, challenges arose cross-linking temperature was too high when integrating with other functional...

10.1021/jacs.3c14310 article EN Journal of the American Chemical Society 2024-02-14

We predict theoretically that stable subwavelength plasmonic lattice solitons (PLSs) are formed in arrays of metallic nanowires embedded a nonlinear medium. The tight confinement the guiding modes nanowires, combined with strong nonlinearity induced by enhanced field at metal surface, provide main physical mechanisms for balancing wave diffraction and formation PLSs. As conditions required PLSs satisfied variety systems, we expect these to have important applications nanophotonics. In...

10.1103/physrevlett.104.106802 article EN Physical Review Letters 2010-03-10

The past decades have witnessed the development of many technologies based on nanoionics, especially lithium-ion batteries (LIBs). Now there is an urgent need for developing LIBs with good high-rate capability and high power. nanostructured electrodes show great potentials achieving such goals. However, nature Li-ion transport behaviors within not well clarified yet. Here, in LixCoO2 nanograins are investigated by employing conductive atomic force microscopy (C-AFM) technique to study local...

10.1038/srep01084 article EN cc-by-nc-nd Scientific Reports 2013-01-17

Abstract A new tetraazatetracene derivative, 2,3‐[4,4′‐bis( N , ‐diphenylamino)benzyl]‐5,12‐bis[(triisopropylsilyl)ethynyl]‐1,4,6,11‐tetraazatetracene (TPAs‐BTTT), displays rewritable multilevel memory behavior, which is probably induced by multielectron intramolecular charge transfer (CT).

10.1002/asia.201402899 article EN Chemistry - An Asian Journal 2014-09-22

A new polyimide bearing the functional pendant 9-phenyl-9H-carbazole moieties, poly[2,2-(4,4′-di(N-benzyloxycarbazole)-3,3′-biphenylene)propane-hexafluoroisopropylidenediphthalimide] (6F-BAHP-PC PI), has been designed as a material for resistance memory devices. The ITO/6F-BAHP-PC PI/Ag device exhibits nonvolatile resistive switching (RS) with high ON/OFF ratio (>106), long retention time (>6 × 104 s), good endurance, and low power consumption (∼100 μW). In situconductive atomic force...

10.1039/c1jm13849a article EN Journal of Materials Chemistry 2011-11-01

Two donor–acceptor (D–A) polyazothines (PAs), incorporating the oxadiazole entity either acting as an electron acceptor (A) to form D–A structured PA-1 with triphenylamine donor (D), or a PA-2 3,3′-dinitro-diphenylsulfone acceptor, have been successfully synthesized via polycondensation reaction. The variation in role of moiety polymers, together use different top electrode metals, leads interesting electronic transport properties and various resistive switching behaviors present...

10.1039/c3tc30826j article EN Journal of Materials Chemistry C 2013-01-01

Four three-dimensional (3D) pyrene-fused N-heteroacenes (P1-P4) are designed and synthesized. From P1 to P4, their lengths extended in an iterative way, where the thiadiazole unit can be reduced diamine obtained diamines further condensed with diketones a unit. Compared two-dimensional counterparts, solubility of these 3D is improved by this covalent linkage units. The diameters P1-P4 3.66, 6.06, 8.48 10.88 nm, respectively, molecules characterized 1H, 13C 2D NMR, MS, UV-vis, PL CV spectra....

10.1021/jacs.9b01082 article EN cc-by Journal of the American Chemical Society 2019-03-12

Organic piezomaterials have attracted much attention because of their easy processing, lightweight, and mechanic flexibility properties. Developing new smart organic is highly required for new-generation electronic applications. Here, we found a novel piezomaterial charge-transfer complex (CTC) consisting dibenzcarbazole analogue (DBCz) tetracyanoquinodimethane (TCNQ) in the molecular-level heterojunction stacking mode. The DBCz–TCNQ exhibited ferroelectric properties (the saturated...

10.1021/acsami.3c16678 article EN ACS Applied Materials & Interfaces 2024-01-03

Abstract As ferroelectrics hold significance and application prospects in wearable devices, the elastification of becomes more important. Nevertheless, achieving elastic requires stringent synthesis conditions, while relaxor ferroelectric materials remains unexplored, presenting an untapped potential for utilization energy storage actuation electronics. The thiol‐ene click reaction offers a mild rapid platform to prepare functional polymers. Therefore, we employed this approach obtain by...

10.1002/anie.202400511 article EN Angewandte Chemie International Edition 2024-03-16

Three thiadiazoloquinoxaline-containing long pyrene-fused N-heteroacenes with 8, 13, and 18 rings were designed synthesized. They show high electron affinities (EAs) of approximately 4.1 eV, which derived from the onset reduction peaks in cyclic voltammetry. Crystal structure analysis revealed in-plane extension through close contacts between thiadiazole units as well layered packing, enabling interlayer transport. Organic field-effect transistor devices provided mobilities, suggest a...

10.1002/anie.201803230 article EN Angewandte Chemie International Edition 2018-08-04

Abstract High‐dielectric‐constant elastomers always play a critical role in the development of wearable electronics for actuation, energy storage, and sensing; therefore, there is an urgent need effective strategies to enhance dielectric constants. The present methods mainly involve adding inorganic or conductive fillers polymer elastomers, however, addition causes series problems, such as large loss, increased modulus, deteriorating interface conditions. Here, elastification relaxor...

10.1002/adma.202404001 article EN Advanced Materials 2024-06-05

We demonstrate the electrically controlled electron transfer of thionine-functionalized reduced graphene oxide (rGO–th) in form a homogeneous solution and films. The can be realized bidirectional way, which provides method to control electronic properties through π–π noncovalent functionalization. Based on aforementioned controllable between sheets thionine, resistance random access memories with configuration Pt/rGO–th/Pt were fabricated show nonvolatile resistive switching large ON/OFF...

10.1039/c2jm32121a article EN Journal of Materials Chemistry 2012-01-01
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