Oxide semiconductors have been extensively studied as active channel layers of thin-film transistors (TFTs) for electronic applications. However, the field-effect mobility (μFE) oxide TFTs is not sufficiently high to compete with that low-temperature-processed polycrystalline-Si (50-100 cm2V-1s-1). Here, we propose a simple process obtain high-performance TFTs, namely hydrogenated polycrystalline In2O3 (In2O3:H) grown via low-temperature solid-phase crystallization (SPC) process. In2O3:H...

90 - nm -thick a-Ge films were melted and solidified by excimer laser annealing method. The superlateral growth (SLG) distance increased from 0.5to4.1μm with increasing absorption coefficient of the light-absorptive underlayer. Real-time reflectivity measurement revealed that increase in SLG resulted an Ge film solidification term 60to650ns. velocity calculated proportionality constant was 6–7m∕s. It shown grains exhibit a single-crystalline structure.

High-performance InGaN-based p-i-n photodetectors (PDs) were fabricated using a typical light-emitting diode (LED) epitaxial structure and surface texturing. A multiple-quantum-well active-layer effectively mitigates the indium clustering problem achieves high rejection ratio scalability. Two types of texturing for enhancing spectral responsivity compared. High responsivities 0.21, 0.23, 0.24 A/W attained at wavelength 388 nm biases 0, -1.5, -3.0 V, respectively, corresponding to external...

Fast epitaxy of Ge on Si(001) was realized by DC sputtering at 2.1 nm·s−1 and 360°C; the resulting film optically flat without a cross-hatch structure. After annealing 700°C, 90°-full-edge dislocations dominated Ge–Si interface threading-dislocation density (TDD) below 104 cm−2, which is three orders magnitude lower than value films prepared other methods. The extremely low TDD might be attributable to spaces vacated desorbed Ar within that served as dislocation sinks during sputtering....

Abstract A single grain with a length of 450 µm and width 5–6 was grown in 60 nm Si film on SiO 2 by scanning chevron-shaped cw laser beam, which formed passing linear beam through novel one-sided Dove prism. The crystal did not have any dominant orientations both the growth normal directions. orientation rotated about transverse direction at rate 0.47–0.51°/µm forward direction, suggests that lattice constant surface 0.049–0.053% larger than bottom.

Area-selective growth of iridium dioxide (IrO2) nanorods has been demonstrated via metalorganic chemical vapor deposition (MOCVD) using precursor (methylcyclopentadienyl)(1,5-cyclooctadiene)Ir on a sapphire (012) or (100) substrate which consists patterned SiO2 as the nongrowth surface. The optimal temperature for selective is 450 ± 10 °C at chamber pressure 20 mbar. Orientation dictated by in-plane epitaxial relation between IrO2 crystal and sapphire, along with habit in [001] direction....

Abstract The lattice defects in neutron irradiated αCu-Al, αCu-Ga and αCu-Ge solid solution alloys have been observed by transmission electron microscopy the defect structures are compared with copper. Alloys 0.5 at. % of either aluminium, gallium or germanium show both large resolvable dislocation loops small ‘black spots’; same seen ≥ 5 solute only spots’. effect these higher suppressing formation has also after alpha particle irradiation. Since believed to be interstitial nature, results...

Abstract Metal-induced crystallization was applied to an electrodeposited Ge film on insulator. It confirmed that occurred at 150 °C for 1 h in ambient N 2 and Cu, which used as electrode plating, started diffusing into the even 100 °C. The diffused Cu distributed uniformly film, ratio of ∼2.5. A fine particulate pattern, attributed effect diffusion, observed surface by scanning electron microscopy. We considered because diffusion from electroplate electrode. Consequently, (220)-oriented...

Direct-current sputter epitaxy of Si on a Si(001) substrate was realized at 175 °C growth rate 3.3 nm·s −1 and applied to form n + -emitters crystalline-Si solar cells. A cell with 50-nm-thick -emitter exhibited short current density 23.8 mA·cm −2 owing an increased internal quantum efficiency wavelengths between 400 600 nm. The improved due the step junction characteristics epitaxially grown exhibiting better response wavelengths, performance than that graded formed by thermal diffusion.

Rotation of the crystal orientation a laterally grown grain in Si thin film was investigated with micro-chevron laser beam scanning (μCLBS) method. The rate rotation Rθ found to be inversely proportional thickness tSi, and model explain proposed. is caused by 2.2% difference expansion between top bottom surfaces on solidification. An SiO2 capping used suppress rotation, as result, twin-free (100)-faced single-crystal stripe longer than 3 mm formed. It that all sustainably grains had = 0,...

Excimer-laser-induced lateral-crystallization of Si thin-films has been characterized numerically. The effects the film thickness, light intensity profile and thermal properties underlayer on grain growth are discussed. tilted melt-solid interface is essential for large super-cooled region in front also important quick start crystal growth. It was concluded that gradient method suitable growth, since it can satisfy both requirements. Elongating melt duration using a low specific heat...

Continuous Si homoepitaxy was realized without substrate heating by using dc magnetron sputtering. at least thick can be grown epitaxially on a substrate. Characterization reflective high-energy electron diffraction, micro-Raman spectroscopy, and transmission microscopy showed that the epitaxial film exhibited good crystallinity. Electrons were shown to dominant species for surface bombardment in It suggested energetic plays an important role low-temperature continuous-sputtering epitaxy.

Hydrogenated polycrystalline In2O3 (In2O3:H) thin-film transistors (TFTs) fabricated via the low-temperature solid-phase crystallization (SPC) process with a field-effect mobility (μFE) exceeding 100 cm2 V-1 s-1 are promising candidates for future electronics applications. In this study, we investigated effects of SPC temperature Ar + O2 H2-sputtered In2O3:H films on electron transport properties TFTs. The TFT an 300 °C exhibited best performance, having largest µFE 139.2 s-1. contrast, was...

60-µm-long grains were grown laterally in a 50-nm-thick Si layer on thermally oxide by single shot irradiation of an excimer-laser-light pulse. The origin such marked (about 10 times) enlargement can be found newly introduced photosensitive capping the layer, which has been heated uniformly to extremely high temperatures absorbing fraction and gradually transfers stored heat after laser irradiation, resulting extension liquid-phase duration layer. Ultrathinning effectively reduce lateral...

Twin formation in one directional crystal growth of Si strip were investigated. By comparing all {111} planes before and after twinning, twin plane was identified. From synthesizing a over 1 mm, it found most downward with respect to substrate, have low inclined angle Si/SiO2 interface. This result indicate interface is the origin so both good quality avoiding orientation having approximately parallel film are essential for reducing twinning. by chemical vapor deposition drastically lower...

High performance and uniform thin-film transistors were fabricated on a grain-boundary (GB) free single crystal Si strip for the first time. Here sputter-SiO2 gate insulator was used. Electron mobility μ 548 cm2 V−1 s−1, subthreshold swing ss 0.279 V dec−1, on/off ratio 2.4 × 107. Variability of only 9.4% but that 34.2%. Carrier scattering known to be dominated by GB in conventional polycrystalline Si, it phonon GB-free irrespective value. The deviation shown due orientation variation along...

We have successfully deposited SiNx:H films at temperatures as low 350°C by the chemical-vapor-deposition (CVD) method using hexachloro-disilane (Si 2 Cl 6 ) and hydrazine (N H 4 ). The atomic ratio (N/Si) of film 400°C was 1.26 with a total hydrogen content about 30 at.%. breakdown-field strength 5.3 MV/cm leakage-current density 1 µA/cm , low-field resistivity more than 10 15 Ω·cm. Amorphous-silicon thin-film transistors equipped this gate dielectric showed clear transfer characteristics.

The location of crystal grains in polycrystalline Si thin films under excimer laser crystallization is controlled. A local area film was melted by a microlight beam with diameter less than 1 µm, and only one comparatively large grain grown within the melt. Then, remelted uniform light, superlateral growth (SLG) originated from seed. As result, location-controlled SLG 6 µm were formed.