Oxide semiconductors have been extensively studied as active channel layers of thin-film transistors (TFTs) for electronic applications. However, the field-effect mobility (μFE) oxide TFTs is not sufficiently high to compete with that low-temperature-processed polycrystalline-Si (50-100 cm2V-1s-1). Here, we propose a simple process obtain high-performance TFTs, namely hydrogenated polycrystalline In2O3 (In2O3:H) grown via low-temperature solid-phase crystallization (SPC) process. In2O3:H...

In this paper, high-performance bottom-gate thin-film transistors (TFTs) with transparent zinc oxide (ZnO) channels have been developed. The ZnO film for active was deposited by RF magnetron sputtering. crystallinity of the drastically improved when it on a doublelayer SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /SiN gate insulator. order to achieve TFT back-plane liquid-crystal display (LCD) required pattern accuracy, dry...

Highly crystalline α-phase gallium oxide (Ga 2 O 3 ) thin films were grown by fine-channel mist chemical vapor deposition on c -sapphire substrates at 400 °C a rate of more than 20 nm/min. The doped with Sn(IV) atoms, which obtained from Sn(II) chloride the reaction SnCl + H 2HCl→SnCl 4 2H O. Conductive Ga successfully source solutions containing less 10 at. % Sn(IV). solution resulted in obtaining film an n-type conductivity as high 0.28 S cm -1 , mobility 0.23 V s carrier concentration...

This paper demonstrates the use of cost-effective solution-processed α-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> thin films (TFs) for electronic device applications. MESFETs based on AgO xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Schottky diode (SD) gates were fabricated highly crystalline Sn-doped TFs, grown by mist chemical vapor deposition at atmospheric pressure...

A wide dynamic range CMOS image sensor with a burst readout multiple exposure method is proposed. In this method, maximally four different exposure-time signals are read out in one frame. To achieve the high-speed readout, compact cyclic analog-to-digital converter (ADC) noise canceling function proposed and arrays of ADCs integrated at column. prototype has been developed 0.25-/spl mu/m 1-poly 4-metal technology. The expanded by factor 1791 compared to case single exposure. measured be 19.8...

To investigate the effect of hydrogen diffusion from silicon oxide etch-stopper (SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>x</i></sub> ES) layer into amorphous In–Ga–Zn–O (a-IGZO) on thin-film transistor (TFT) properties and stabilities, we fabricated a-IGZO TFTs with a SiO ES deposited by plasma-enhanced chemical vapor deposition at various silane (SiH xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> ) partial pressures (P[SiH...

Stability is the most crucial issue in fabrication of oxide thin-film transistors (TFTs) for next-generation displays. We have investigated thermal distribution an InSnZnO TFT under various gate and drain voltages by using infrared imaging system. An asymmetrical was observed at a local region depending on bias stress. These phenomena were decelerated or accelerated with stress time. discussed degradation mechanism analyzing electrical properties distribution. concluded that are caused...

Abstract Oxide semiconductors have been investigated as channel layers for thin film transistors (TFTs) which enable next-generation devices such high-resolution liquid crystal displays (LCDs), organic light emitting diode (OLED) displays, flexible electronics, and innovative devices. Here, high-performance stable Ga-Sn-O (GTO) TFTs were demonstrated the first time without use of rare metals In. The GTO films deposited using radiofrequency (RF) magnetron sputtering. A high field effect...

Abstract— High‐performance top‐gate thin‐film transistors (TFTs) with a transparent zinc oxide (ZnO) channel have been developed. ZnO thin films used as active channels were deposited by rf magnetron sputtering. The electrical properties and thermal stability of the are controlled deposition conditions. A gate insulator made silicon nitride (SiN x ) was on conventional P‐CVD. novel ZnO‐TFT process based photolithography is proposed for AMLCDs. AMLCDs having an aperture ratio pixel density...

A vertically stacked image sensor composed of green (G)- and red (R)-sensitive organic photoconductive films, each having a thin-film transistor (TFT) that uses transparent zinc oxide (ZnO) channel to read out signal generated in the film, was fabricated. The effective number pixels ZnO-TFT circuits 1410 (47 times 30), their pitch 600 mum. current on/off ratio turn-on voltage were over 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup>...

The electrical properties of thin-film transistors (TFTs) with ZnO channels which were deposited by radio-frequency magnetron sputtering at various oxygen partial pressures [ <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</i> ( O <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> )] are investigated. A negative shift the turn-on voltage a "hump" was observed, and donorlike traps generated intermediate energy levels from conduction band...

Double-sweeping gate voltage mode and positive pulse were used to investigate the mechanism of negative bias illumination stress (NBIS) induced hysteresis in bottom-gate InGaZnO TFTs. Threshold voltages (Vth) reverse measurement shifted positively well fitted a stretched-exponential equation under various conditions. "Hump" effect appeared forward gradually increased with time. The results indicate that trapped electrons at back interface, holes front interface generation donor-like states...

In-Ga-Zn-O (IGZO) thin films (TFs) were grown by cost-effective nonvacuum solution-processed mist chemical vapor deposition. High quality AgO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Schottky contacts (SCs) fabricated on these IGZO TFs with rectification ratios and barrier heights as high 7.9 × 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> 1 eV, respectively, combined ideality factors low 1.32. These SCs subsequently...

Abstract We propose and demonstrate the concept of hydrogen‐free (H‐free) amorphous oxide semiconductor thin‐film transistors (AOS TFTs) to resolve hydrogen‐associated instability TFT. H‐free SiO 2 SiN x films were successfully deposited by large‐area inductively coupled plasma chemical vapor deposition (ICP‐CVD) using source gases. applied as gate insulator passivation layers TFT, respectively. The In–Ga–Zn–Sn–O (IGZTO) TFT exhibited field‐effect mobility 23.2 cm V −1 s excellent stability...

We developed a thin-film transistor (TFT) with an amorphous-indium–gallium–zinc oxide (IGZO) channel and aluminium ( <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\hbox{AlO}_{\rm x}$</tex></formula> ) gate dielectric stack that was formed using solution-based atmospheric pressure chemical vapor deposition. A breakdown electric field of 5.9 MV/cm constant 6.8 were achieved for the...

A highly stable fluorine-passivated In–Ga–Zn–O (IGZO) thin-film transistor (TFT) was demonstrated under positive gate bias and temperature stress (PBTS). The defects in the IGZO TFT were passivated by fluorine, which introduced into a SiOx etching stopper during deposition of fluorinated silicon nitride for passivation diffused post-fabrication annealing. From results secondary ion mass spectrometry analysis, reliability PBTS observed to be markedly improved even at 100 °C when fluorine...

Abstract Silver oxide Schottky contacts (SCs), reactively sputtered using a low-power Ar:O 2 rf-plasma on SnO films grown by mist-CVD, showed significantly improved figures-of-merit compared with plain-metal SCs, barrier heights of 0.91 eV and ideality factors close to unity. These SCs were used fabricate thin-film metal-semiconductor FETs on/off ratios &gt;10 6 the same solution-processed material. It is proposed that high quality these due oxidized fabrication methodology, whereby reactive...

Mechanically flexible vertical-channel-structured thin-film transistors (VTFTs) with a channel length of 200 nm were fabricated on 1.2 μm thick colorless polyimide (CPI) substrates. All layers composing the gate stacks prepared by atomic-layer deposition (ALD) good step coverage, and process thermal budget was designed below 180 °C. Zeocoat introduced as spacer material to improve device characteristics properly determining conditions for clearly forming vertical sidewalls. The transfer ZnO...

High-performance In–Ga–Zn–O (IGZO) Schottky diodes (SDs) were fabricated using hydrogenated IGZO (IGZO:H) at a maximum process temperature of 150 °C. IGZO:H was prepared by Ar + O2 H2 sputtering. SDs on glass substrate exhibited superior electrical properties with very high rectification ratio 3.8 × 1010, an extremely large barrier height 1.17 eV, and low ideality factor 1.07. It confirmed that the hydrogen incorporated during deposition increased band gap energy from 3.02 eV to 3.29...

Transparent oxide semiconductors (TOSs) based thin-film transistors (TFTs) that exhibit higher field effect mobility (µ

A 10-b 30-MS/s low-power CMOS pipelined analog-to-digital converter (ADC) is described. The ADC using a pseudodifferential architecture and capacitor cross-coupled sample-and-hold stage consumes 16 mW with single 2-V supply. chip fabricated in standard 0.3-μm two-poly three-metal technology. achieved dissipation normalized by the sampling frequency of 0.52 mW/MHz superior to other high-speed ADCs reported. has signal-to-noise-and-distortion ratio 54 dB at an input 15 MHz. maximum...

The effects of postdeposition annealing at up to 350 °C on the crystallinity and thermal stability sputter-deposited ZnO films have been investigated in terms deposition pressure. average crystallite size biaxial film stress an as-deposited is strongly related A crystallization process during was only observed when deposited under low Thermal desorption spectrometry (TDS) measurement revealed that Zn from suppressed with decreasing correlated rf plasma analysis results. It found oxygen...

A color image was produced by a vertically stacked sensor with blue (B)-, green (G)-, and red (R)-sensitive organic photoconductive films, each having thin-film transistor (TFT) array that uses zinc oxide (ZnO) channel to read out the signal generated in film. The number of pixels fabricated is 128×96 for color, pixel size 100×100 µm 2 . current on/off ratio ZnO TFT over 10 6 , B-, G-, R-sensitive films show excellent wavelength selectivity. can produce at frames per second resolution...