A5075644911- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Quantum and electron transport phenomena
- Semiconductor Quantum Structures and Devices
- Transition Metal Oxide Nanomaterials
- GaN-based semiconductor devices and materials
Micron (United States)
2010-2024
Purdue University West Lafayette
2015-2018
University of Notre Dame
2009-2011
We present NVDRAM, the world's first dual-layer, high-performance, high-density (32Gb) and non-volatile ferroelectric memory technology. NVDRAM uses an ultra-scaled (5.7nm) capacitor as cell a dual gated, stackable, polycrystalline silicon transistor access device. To achieve high density, two layers utilizing 4F <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> architecture with 48nm pitch are fabricated above CMOS circuitry. Full package...
Abstract The role of spontaneous and piezoelectric polarization in III–V nitride heterostructure devices is discussed. Problems as well opportunities incorporating abrupt graded heterojunctions composed binary, ternary, quaternary nitrides are outlined.
Landau field effect transistors promise to lower the power-dissipation of integrated circuits (ICs) by reducing subthreshold swing (S) below Boltzmann limit 60 mV/dec. The key idea is replace classical gate insulator with dielectrics that exhibit negative capacitance (NC) associated double-well energy landscape, for example, ferroelectrics (FE), air-gap capacitors, or a combination thereof. Indeed, S dramatically reduced, constrained only limits hysteresis-free operation. Unfortunately,...
A 27nm 16Gb Cu based NV Re-RAM chip has been demonstrated. Novel process introduction to enable this technology include a Damascene Cell, Line-SAC Digit Lines filled with Cu, exhumed-silicided array contacts, raised epitaxial arrays, and high-drive buried access devices.
Among the various sub-60 mV/decade transistors proposed to reduce supply voltage (and thereby, power dissipation) of an integrated circuit, a Landau switch achieves this goal by amplifying gate replacing dielectric (DE) with ferroelectric (FE) that exhibits negative capacitance. The subthreshold swing (S) and dissipation are indeed reduced, but one wonders if switching speed would suffer at low operating voltage, reliability degrade due polarization switching. Based on coupled kinetics FE-DE...
Mott materials have been investigated since late 1950s for their remarkably abrupt insulator to metal transition (IMT) in response changes temperature, strain, or electrical stimulus. Interest these has revived by recent demonstration of nanosecond-scale switching along with reproducible and fully reversible transitions VO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based thin film devices. These phenomena make devices...
A one-transistor tunnel SRAM cell is proposed and analyzed. The new uses the bistability of a diode pair to latch body voltage MOSFET which then shifts threshold enables sensing state by measurement MOS transistor current. Band-to-band tunneling used write cell.
A one-transistor tunnel static random access memory (SRAM) cell is proposed and analyzed. The new uses the bistability of a diode pair to latch body voltage MOSFET that then shifts threshold enables sensing state by measurement transistor current. Band-to-band tunneling used write cell. This offers more than 10 000× reduction in power compared 6-transistor (T) SRAM at 32-nm technology node. size 48 <i xmlns:mml="http://www.w3.org/1998/Math/MathML"...
The Landau field-effect transistors have been previously investigated to lower the power dissipation of integrated circuits by reducing subthreshold swing (SS) below Boltzmann limit 60 mV/dec. basic idea is replace classical gate insulator with dielectrics that exhibit a negative capacitance (NC) associated double-well energy landscape, for example, ferroelectrics (FE), air-gap capacitors, or combination thereof. In this article, we demonstrate same NC effect can also be used achieve devices...