A5059540171- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- MXene and MAX Phase Materials
- Advanced Memory and Neural Computing
- 2D Materials and Applications
- Electronic and Structural Properties of Oxides
- Catalytic Processes in Materials Science
- Gas Sensing Nanomaterials and Sensors
- Ferroelectric and Piezoelectric Materials
- Laser-Ablation Synthesis of Nanoparticles
- Ion-surface interactions and analysis
- Transition Metal Oxide Nanomaterials
- Gold and Silver Nanoparticles Synthesis and Applications
- Graphene research and applications
- Diamond and Carbon-based Materials Research
- Metal and Thin Film Mechanics
- Neuroscience and Neural Engineering
- Advanced Chemical Sensor Technologies
- Perovskite Materials and Applications
- Silicon Nanostructures and Photoluminescence
- nanoparticles nucleation surface interactions
- Nanomaterials and Printing Technologies
- Neural Networks and Reservoir Computing
- Nonlinear Optical Materials Studies
- Bone Tissue Engineering Materials
Moscow Institute of Physics and Technology
2015-2024
Moscow Power Engineering Institute
2019-2023
Moscow Aviation Institute
2019-2023
Saratov State University
2023
Institute of Physics and Technology
2015-2021
Moscow Engineering Physics Institute
1991-2020
Plasma (Russia)
2020
Seoul National University
2018-2019
Pusan National University
2018
TU Dresden
2018
Hf0.5Zr0.5O2 thin films are one of the most appealing HfO2-based ferroelectric films, which have been researched extensively for their applications in memory devices. In this work, a 1 mol % La-doped film was grown by plasma-assisted atomic layer deposition and annealed at temperatures 450 500 °C to crystallize into desired orthorhombic phase. Despite use lower temperature than that used previous reports, showed highly promising properties-a remnant polarization ∼30 μC/cm2 switching cycle...
Because of their immense scalability and manufacturability potential, the HfO2-based ferroelectric films attract significant attention as strong candidates for application in memories related electronic devices. Here, we report behavior ultrathin Hf0.5Zr0.5O2 films, with thickness just 2.5 nm, which makes them suitable use tunnel junctions, thereby further expanding area practical application. Transmission electron microscopy diffraction analysis grown on highly doped Si substrates confirms...
Atomically thin transition metal dichalcogenides (TMDCs) present a promising platform for numerous photonic applications due to excitonic spectral features, possibility tune their constants by external gating, doping, or light, and mechanical stability. Utilization of such materials sensing optical modulation purposes would require clever design, as itself the 2D can offer only small phase delay - consequence atomic thickness. To address this issue, we combine films semiconductors which...
The crystalline structure and electrical response of La-doped HfO2-ZrO2 thin films which processing temperature did not exceed 400 °C were examined, where the La-doping concentration was varied from zero to ≈2 mol. %. film associated properties found vary sensitively with minute variation in La-concentration, ferroelectric at low La-concentration (<≈1 %) gradually became antiferroelectric-like for >≈1 %, accompanied by a significant increase dielectric permittivity. be very...
While the conductance of a first-order memristor is defined entirely by external stimuli, in second-order it governed both stimuli and its instant internal state. As result, dynamics such devices allows to naturally emulate temporal behavior biological synapses, which encodes spike timing information synaptic weights. Here, we demonstrate new type functionality ferroelectric HfO2-based tunnel junction on silicon. The continuous change p+-Si/Hf0.5Zr0.5O2/TiN achieved via gradual switching...
We report the possibility of employment low temperature (≤330 °C) plasma-enhanced atomic layer deposition for formation both electrodes and hafnium-oxide based ferroelectric in metal-insulator-metal structures. The structural properties La doped HfO2-based layers its evolution with change content (2.1, 3.7 5.8 at. %) rapid thermal processing (550–750 were investigated detail. Ferroelectric emerged only 2.1 % due to changes caused by given doping levels. also found depend strongly on...
Recently proposed novel neural network hardware designs imply the use of memristors as electronic synapses in 3D cross-bar architecture. Atomic layer deposition (ALD) is most feasible technique to fabricate such arrays. In this work, we present results detailed investigation gradual resistive switching (memristive) effect nanometer thick fully ALD grown TiN/HfO2/TiN stacks. The modelling I-V curves confirms interface limited trap-assisted-tunneling mechanism along oxygen vacancies HfO2 all...
The structural and ferroelectric properties of lightly La-doped (1 mol. %) HfO2 thin films grown by plasma-assisted atomic layer deposition were examined. An annealing temperature as low 400 °C crystallized the film into desired orthorhombic phase, which resulted in it displaying promising performance. remanent polarization (Pr) increased with temperature, but performance enhancement seemed to saturate at 500 °C. A slight decrease dielectric constant, was associated preferential formation a...
Since the discovery of ferroelectricity (FE) in HfO2-based thin films, they are gaining increasing attention as a viable alternative to conventional FE next generation non-volatile memory devices. In order further increase density elements integrated circuits, it is essential adopt three-dimensional design. atomic layer deposition (ALD) processes extremely conformal, ALD favored approach production 3D ferroelectric random access memory. Here, we report fabrication fully ALD-grown capacitors...
New interest in the implementation of ferroelectric tunnel junctions has emerged following discovery properties HfO2 films, which are fully compatible with silicon microelectronics technology. The coercive electric field to switch polarization direction is relatively high compared classical perovskite materials, and thus it can cause migration non-ferroelectric charges HfO2, namely charged oxygen vacancies. charge redistribution would change barrier shape electroresistance effect. In case...
Graphene is a promising building block material for developing novel photonic and optoelectronic devices. Here, we report comprehensive experimental study of chemical-vapor deposited (CVD) monolayer graphene’s optical properties on three different substrates ultraviolet, visible, near-infrared spectral ranges (from 240 to 1000 nm). Importantly, our ellipsometric measurements are free from the assumptions additional nanometer-thick layers water or other media. This issue critical practical...
The influence of the bottom TiO2 interfacial layer grown by atomic deposition on ferroelectric properties TiN/Hf0.5Zr0.5O2/TiN capacitors is systematically investigated. We show that integration leads to an increase in polar orthorhombic phase content Hf0.5Zr0.5O2 film. In addition, crystalline structure film highly dependent thickness inset, with monoclinic stabilization after thickness. Special attention this work given key reliability parameters-retention and endurance. demonstrate inset...
Control of the chemical composition and optical properties molybdenum disulfide nanoparticles by laser ablation fragmentation is demonstrated.
Neuromorphic capabilities of a self-aligned complementary metal-oxide-semiconductor compatible W/WOx/HfO2/Ru cell in 3D vertical memristive structure were investigated. We show that the device exhibits nonfilamentary forming-free multilevel resistive switching with gradual resistance change. In addition, poor retention low state allows integration these structures architectures require short-term memory characteristics such as reservoir computing systems. The ability to rely on temporal...
The plasma-enhanced atomic layer deposition (PEALD) process using Ta(OC2H5)5 as a Ta precursor and plasma-activated hydrogen reactant for the of TaOx films with controllable concentration oxygen vacancies (VO) is reported herein. VO control was achieved by varying volume fraction hydrogen-argon mixture in plasma, allowing leakage current density tantalum oxide within range 5 orders magnitude compared Ta2O5 film grown via thermal ALD identical H2O. Temperature-dependent current-voltage...
The influence of La content on the ferroelectric properties HfO2-ZrO2 thin films was examined for integrated electrostatic supercapacitor applications. A transition from to antiferroelectric-like behavior, accompanied by a significant increase energy storage density value and efficiency, observed with increasing concentration in La-doped HfO2-ZrO2-based capacitor structures, where processing temperature remained below 400 °C. combination high (≈50 J/cm3) efficiency (70%) obtained film...
The feasibility of growing atomically thin MoS2 films (down to two monolayers) on several tens cm2 area was demonstrated by first depositing the MoO3 film using an atomic layer deposition and subsequent sulfurization at temperatures ranging from 500 1000 °C. effect temperature properties investigated in details. It found that annealing under elemental sulfur vapor condition allows effective °C, which converted contained a rather high concentration might reside boundaries between relatively...
Owing to a strong photothermal response in the near-IR spectral range and very low toxicity, titanium nitride (TiN) nanoparticles (NPs) synthesized by pulsed laser ablation liquids (PLAL) present novel appealing object for photo-induced therapy of cancer, but properties these NPs still require detailed investigation. Here, we have elaborated methods femtosecond from TiN target variety liquid solutions, including acetonitrile, dimethylformamide, acetone, water, H2O2, synthesize clarify effect...