A5040108336- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- MXene and MAX Phase Materials
- Ferroelectric and Piezoelectric Materials
- Electronic and Structural Properties of Oxides
- Multiferroics and related materials
- 2D Materials and Applications
- Magnetic Properties and Synthesis of Ferrites
- Force Microscopy Techniques and Applications
- Diamond and Carbon-based Materials Research
- Iron oxide chemistry and applications
- Neuroscience and Neural Engineering
- Metal and Thin Film Mechanics
- Advanced Sensor and Energy Harvesting Materials
- Adhesion, Friction, and Surface Interactions
- ZnO doping and properties
- Electromagnetic wave absorption materials
- Perovskite Materials and Applications
- Nanotechnology research and applications
- Nanofabrication and Lithography Techniques
- Carbon Nanotubes in Composites
- Photoreceptor and optogenetics research
- High-pressure geophysics and materials
- CCD and CMOS Imaging Sensors
Moscow Institute of Physics and Technology
2016-2025
Moscow Power Engineering Institute
2019-2025
Moscow Aviation Institute
2019-2024
University of Nebraska–Lincoln
2021
Seoul National University
2019
Institute of Physics and Technology
2011
While the conductance of a first-order memristor is defined entirely by external stimuli, in second-order it governed both stimuli and its instant internal state. As result, dynamics such devices allows to naturally emulate temporal behavior biological synapses, which encodes spike timing information synaptic weights. Here, we demonstrate new type functionality ferroelectric HfO2-based tunnel junction on silicon. The continuous change p+-Si/Hf0.5Zr0.5O2/TiN achieved via gradual switching...
The mechanism of the remnant polarization (Pr) growth during first stage ferroelectric HfO2-based memory cell operation (the wake-up effect) is still unclear. In this work, we reveal microscopic nature Pr in functional capacitors based on a polycrystalline 10 nm thick (111) out-of-plane textured Hf0.5Zr0.5O2 film electric cycling. We observe cycle-by-cycle evolution domain structure with piezoresponse force microscopy (PFM). During early wake-up, three types domains are found: (i) normal...
Electroresistance in ferroelectric tunnel junctions is controlled by changes the electrostatic potential profile across junction upon polarization reversal of ultrathin barrier layer. Here, hard X-ray photoemission spectroscopy used to reconstruct electric as-grown Cr/BaTiO3(001)/Pt(001) heterostructures. Transport properties Cr/BaTiO3/Pt with a sub-μm Cr top electrode are interpreted terms tunneling electroresistance resistance factor ∼30 reversal. By fitting I-V characteristics model...
Because of their full compatibility with the modern Si-based technology, HfO2-based ferroelectric films have recently emerged as viable candidates for application in nonvolatile memory devices. However, despite significant efforts, mechanism polarization switching this material is still under debate. In work, we elucidate microscopic nature process functional Hf0.5Zr0.5O2-based capacitors during its operation. particular, static domain structure and dynamics following external electric field...
New interest in the implementation of ferroelectric tunnel junctions has emerged following discovery properties HfO2 films, which are fully compatible with silicon microelectronics technology. The coercive electric field to switch polarization direction is relatively high compared classical perovskite materials, and thus it can cause migration non-ferroelectric charges HfO2, namely charged oxygen vacancies. charge redistribution would change barrier shape electroresistance effect. In case...
The feasibility of growing atomically thin MoS2 films (down to two monolayers) on several tens cm2 area was demonstrated by first depositing the MoO3 film using an atomic layer deposition and subsequent sulfurization at temperatures ranging from 500 1000 °C. effect temperature properties investigated in details. It found that annealing under elemental sulfur vapor condition allows effective °C, which converted contained a rather high concentration might reside boundaries between relatively...
Abstract Next‐generation flexible electronics for healthcare applications require biocompatible non‐volatile memory data storage. Ultra‐thin ferroelectric hafnium oxide films offer great potential memories due to their flexibility and perfect compatibility with modern technologies. This study presents ultra‐flexible stretchable devices based on 10‐nm‐thick Hf 0.5 Zr O 2 film fabricated by an innovative technology involving encapsulation of the in a organic package. They exhibit high...
Artificial synapse is a key element of future brain-inspired neuromorphic computing systems implemented in hardware. This work presents graphene synaptic transistor based on all-technology-compatible materials that exhibits highly tunable biorealistic behavior. It shown the device geometry and interface properties can be designed to maximize memory window minimize power consumption. The virtually continuous range multiple conductance levels, similar weighting, which achieved by gradual...
Artificial synapse is a key element of future brain-inspired neuromorphic computing systems implemented in hardware. This work presents graphene synaptic transistor based on all-technology-compatible materials that exhibits highly tunable biorealistic behavior. It shown the device geometry and interface properties can be designed to maximize memory window minimize power consumption. The virtually continuous range multiple conductance levels, similar weighting, which achieved by gradual...
Composite multiferroics containing ferroelectric and ferromagnetic components often have much larger magnetoelectric coupling compared to their single-phase counterparts. Doped or alloyed HfO2-based ferroelectrics may serve as a promising component in composite multiferroic structures potentially feasible for technological applications. Recently, strong charge-mediated at the Ni/HfO2 interface has been predicted using density functional theory calculations. Here, we report on experimental...
Ferroelectric hafnium oxide thin films-the most promising materials in microelectronics' non-volatile memory-exhibit both unconventional ferroelectricity and piezoelectricity. Their exact origin remains controversial, the relationship between ferroelectric piezoelectric properties unclear. We introduce a new method to investigate this issue, which consists local controlled modification of within single Hf0.5Zr0.5O2 capacitor device through doping further comparative nanoscopic analysis...
Ultrathin WS2 films are promising functional materials for electronic and optoelectronic devices. Therefore, their synthesis over a large area, allowing control thickness structure, is an essential task. In this work, we investigated the influence of atomic layer deposition (ALD)-grown WO3 seed-film on structural electrical properties nanosheets obtained via sulfurization technique. Transmission electron microscopy indicated that thinnest (1.9 nm) film contains rather big (up to 50 grains in...
The development of the next generation flexible electronics for biomedical applications requires implementation active elements, potentially microcontrollers. further step in this direction includes devices data processing directly on-chip, particular, neuromorphic computing. One key elements put forward within paradigm is memristor—the device emulating plasticity biological synapses. Due to internal temporal dynamics conductance, second-order memristors exhibit most natural emulation a...
Ternary oxide TixAl1−xOy thin films with a wide Ti/Al ratio have been grown by atomic layer deposition technique. As titanium aluminate are shown to be homogeneous alloy and exhibit the amorphous structure in whole compositional range, while rapid thermal processing (RTP) induces crystallization of binary ternary phases once composition film is close specific phase stoichiometry. The permittivity κ varies range κ=12–30 depending on film. A 0.5-nm-thick SiO2 formed at film/Si interface during...
This work demonstrates by in vacuo X-ray photoelectron spectroscopy and grazing-incidence diffraction that Ru(EtCp)2 O* radical-enhanced atomic layer deposition, where EtCp means the ethylcyclopentadienyl group, provides growth of either RuO2 or Ru thin films depending on deposition temperature (Tdep), while different mechanisms are responsible for Ru. The deposited at temperatures ranging from 200 to 260 °C consisted polycrystalline rutile phase revealing, according force microscopy...
Pairing two-dimensional semiconductors with ferroelectric films may allow for the development of hybrid electronic devices that would not only exhibit a combination functional properties both material groups but also reveal unusual characteristics emerging from coupling between these properties. Here, we report observation considerable (up to 103 at 0.8 V read bias) polarization-mediated tunneling electroresistance (TER) effect in Hf0.5Zr0.5O2 (HZO) tunnel junctions (FTJs) employing MoS2 as...