A5030852108- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Neuroscience and Neural Engineering
- MXene and MAX Phase Materials
- Photoreceptor and optogenetics research
- Ferroelectric and Piezoelectric Materials
- Advanced Sensor and Energy Harvesting Materials
- Electronic and Structural Properties of Oxides
- CCD and CMOS Imaging Sensors
Moscow Institute of Physics and Technology
2021-2025
Moscow Power Engineering Institute
2025
Abstract Next‐generation flexible electronics for healthcare applications require biocompatible non‐volatile memory data storage. Ultra‐thin ferroelectric hafnium oxide films offer great potential memories due to their flexibility and perfect compatibility with modern technologies. This study presents ultra‐flexible stretchable devices based on 10‐nm‐thick Hf 0.5 Zr O 2 film fabricated by an innovative technology involving encapsulation of the in a organic package. They exhibit high...
Artificial synapse is a key element of future brain-inspired neuromorphic computing systems implemented in hardware. This work presents graphene synaptic transistor based on all-technology-compatible materials that exhibits highly tunable biorealistic behavior. It shown the device geometry and interface properties can be designed to maximize memory window minimize power consumption. The virtually continuous range multiple conductance levels, similar weighting, which achieved by gradual...
Artificial synapse is a key element of future brain-inspired neuromorphic computing systems implemented in hardware. This work presents graphene synaptic transistor based on all-technology-compatible materials that exhibits highly tunable biorealistic behavior. It shown the device geometry and interface properties can be designed to maximize memory window minimize power consumption. The virtually continuous range multiple conductance levels, similar weighting, which achieved by gradual...
The development of the next generation flexible electronics for biomedical applications requires implementation active elements, potentially microcontrollers. further step in this direction includes devices data processing directly on-chip, particular, neuromorphic computing. One key elements put forward within paradigm is memristor—the device emulating plasticity biological synapses. Due to internal temporal dynamics conductance, second-order memristors exhibit most natural emulation a...
Since ultrathin ferroelectric HfO2 films can be conformally grown by atomic layer deposition even on complex three-dimensional structures, new horizons in the development of next-generation piezoelectric devices are opened. However, hafnium oxide has a significant drawback for applications: its coefficients much smaller than those classical materials currently used devices. Therefore, approaches to high-performance based exploiting unique properties paramount importance. In this work, giant...
Ferroelectricity patterning in a thin HfO 2 film paves new way for designing innovative switchable photonics devices and microelectronic nonvolatile memory based on hybrid heterostructures of 2D material/ferroelectric (FE) films. For inducing local ferroelectricity, implantation Ga ions into an amorphous by pattern is conducted using focused ion beam followed rapid thermal annealing. It demonstrated that the as well annealing play crucial roles FE properties Ga‐doped , including remnant...