A5079282901- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Neuroscience and Neural Engineering
- Photoreceptor and optogenetics research
- Luminescence Properties of Advanced Materials
- Gas Sensing Nanomaterials and Sensors
- Semiconductor materials and devices
- Electronic and Structural Properties of Oxides
- Transition Metal Oxide Nanomaterials
- ZnO doping and properties
- Neural dynamics and brain function
- Electrochemical sensors and biosensors
- Structural Engineering and Vibration Analysis
- Advancements in Semiconductor Devices and Circuit Design
- Machine Fault Diagnosis Techniques
- Ga2O3 and related materials
- 3D IC and TSV technologies
- Analytical Chemistry and Sensors
- Quantum Dots Synthesis And Properties
- Radiation Detection and Scintillator Technologies
- Semiconductor materials and interfaces
- Lanthanide and Transition Metal Complexes
- Structural Health Monitoring Techniques
- Photonic and Optical Devices
- Conducting polymers and applications
Cotton University
2021-2024
Institute for Microelectronics and Microsystems
2023-2024
Chang Gung University
2014-2020
University of Pittsburgh
2012
The performances of conductive-bridging random access memory (CBRAM) have been reviewed for different switching materials such as chalcogenides, oxides, and bilayers in structures. structure consists an inert electrode one oxidized copper (Cu) or silver (Ag). mechanism is the formation/dissolution a metallic filament under external bias. However, growth dynamics are still debated. All CBRAM devices operation current 0.1 μA to 1 mA, voltage ±2 V also needed. device can reach low 5 pA;...
Self-compliance resistive random access memory (RRAM) characteristics using a W/TaO x /TiN structure are reported for the first time. A high-resolution transmission electron microscope (HRTEM) image shows an amorphous TaO layer with thickness of 7 nm. thin TiO N y 3 nm is formed at interface, owing to oxygen accumulation nature Ti. This device 100 consecutive switching cycles excellent uniformity, randomly picked device-to-device good and program/erase endurance >103 cycles. It observed that...
Controlled resistive switching by using an optimized 2 nm thick MoS2 interfacial layer and the role of top electrodes (TEs) on ascorbic acid (AA) sensing in a TaO x-based random access memory (RRAM) platform have been investigated for first time. Both high-resolution transmission electron microscopy (HRTEM) image depth profile from energy dispersive X-ray spectroscopy confirm presence each IrO x/Al2O3/TaO x/MoS2/TiN structure. The pristine device including x TE with shows highest uniform...
Abstract The structural, surface morphological, optical absorption and emission features of Y 2 O 3 :Ce (0%–5%) were studied. samples had a body‐centred cubic crystal structure. undoped sample crystallite size 29.03 nm, it varied after doping with Ce. grain the from 23.00 to 50.78 nm. All exhibited strong band at 206 nm due F‐centre involving delocalised bands. In addition, doped secondary ~250 4f → 5d transitions Ce 3+ ions. bandgap was found be ~5.37 eV, decreased 5.20 eV an increase in...
Formation-free multi-level resistive switching characteristics by using 10 nm-thick polycrystalline GeO
Abstract Controlling the copper (Cu) filament using an optimized porous iridium (Ir) interfacial layer thickness ranging from 2 to 20 nm in a Cu/Ir/TiN x O y /TiN resistive switching memory device is investigated for first time. Transmission electron microscopy (TEM) shows Ir layer, and X‐ray photoelectron spectroscopy (XPS) performed determine 0 , 3+ /Ir 4+ oxidation states, which are responsible super‐Nernstian pH sensitivity of 125.5 mV −1 as well low concentration 1 × 10 −12 m tributyrin...
Abstract Resistive random access memory (RRAM) characteristics using a new Cr/GdO x /TiN structure with different device sizes ranging from 0.4 × to 8 μm 2 have been reported in this study. Polycrystalline GdO film thickness of 17 nm and small via-hole size are observed by transmission electron microscope (TEM) image. All elements confirmed energy dispersive X-ray spectroscopy photoelectron analyses. Repeatable resistive switching at current compliance (CC) 300 μA low operating voltage ±4 V...
Abstract Computing through ensembles of interacting dynamical elements is the next frontier diverse field neuromorphic computing. Spiking neural networks are one possible examples. Computation dynamics and time requires development novel technologies for devices with rich dynamics. Among various candidates, most promising ones volatile electrochemical memristive systems that switch from high to low resistance state by voltage application self‐recover after a tunable relaxation time. Such can...
Resistive switching characteristics and urea sensing have been investigated by using annealed GdOx film in IrOx/GdOx/W cross-point memory for the first time. The shows larger polycrystalline grains as compared to as-deposited films, which is observed high-resolution transmission electron microscope (HRTEM) X-ray diffraction patterns (XRD). Surface roughness of films on W nano-dome atomic force (AFM). resistance ratio 1000× times higher, multi-level operation with varying current compliance...
Large volume change and associated stress generation is known to cause failure of the silicon thin film anode used for Lithium-ion batteries after a few cycles. Experimental observations suggest that plastic deformation underlying Cu substrate degradation active/inactive interface are primary reasons responsible capacity fade. The goal present study examine interplay between these mechanisms using computational mechanics approach. In study, novel multi-physics finite element framework has...
Diode-like threshold switching and high on/off ratio characteristics by using an Al/Ag/Al2O3/TiN conductive bridge resistive random access memories (CBRAM) have been obtained. The 5 nm-thick Al2O3 device shows superior memory parameters such as low forming voltage higher uniformity compared to the 20 layer, owing electric field across material. Capacitance-voltage (CV) are observed for Ag/Al2O3/TiN devices, suggesting unipolar/bipolar phenomena. Negative capacitance (NC) at frequency proves...
Effects of AlO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> interfacial layer in the W/AlO /TaO /TiN structures have been investigated for first time. This RRAM device shows long endurance 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> cycles and good retention at 85°C a low current compliance 100 μA. A physics based simulation is studied to understand set reset mechanism RRAM. The nature ions migration, potential profile...
In this work, we report a novel Cu filament based 5 nm-thick MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> in Cu/MoS /TiN devices with stable DC endurance, long program/erase (P/E) endurance of >8×10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> cycles at low P/E current 100 μA and ns speed, data retention as compared to 2 because controlled migration under external bias. The neuromorphic phenomena is also explored....
Effects of Mo/Ti barrier layer on improving resistive switching and neuromorphic characteristics have been evaluated MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> based CBRAM devices for the first time. The Al/Cu/Ti/MoS /TiN device shows long program/erase endurance >1.5 x 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> cycles at small pulse width 100 ns. operation current is 300 μA 9 cross-point memory good synaptic are...
Abstract: System Identification is an emerging area in the domain of structural engineering specially under health monitoring. For dynamic analysis or stimulation, system parameters (i.e. natural frequency, mode shape, damping ratio etc.) are most important. Vibration data actual structures collected by different sensors. These analyzed with help identification technique to get inside view structure. This paper presents synthetic vibration generation model structure using Time History...
Electrochemical Ag-based memristive devices as dynamical elements for neuromorphic computingStefano Brivio a, Mrinmoy Dutta Sabina Spiga aa CNR-IMM Unit of Agrate Brianza, Via Camillo Olivetti, 2, ItalyProceedings Neuronics Conference (Neuronics)València, Spain, 2024 February 21st - 23rdOrganizers: and Juan BisquertOral, Stefano Brivio, presentation 011DOI: https://doi.org/10.29363/nanoge.neuronics.2024.011Publication date: 18th December 2023The emulation brain functionalities through solid...