A5004135252- Advanced Memory and Neural Computing
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Neuroscience and Neural Engineering
- Analytical Chemistry and Sensors
- 3D IC and TSV technologies
- Transition Metal Oxide Nanomaterials
- Gas Sensing Nanomaterials and Sensors
Chang Gung University
2014-2017
The performances of conductive-bridging random access memory (CBRAM) have been reviewed for different switching materials such as chalcogenides, oxides, and bilayers in structures. structure consists an inert electrode one oxidized copper (Cu) or silver (Ag). mechanism is the formation/dissolution a metallic filament under external bias. However, growth dynamics are still debated. All CBRAM devices operation current 0.1 μA to 1 mA, voltage ±2 V also needed. device can reach low 5 pA;...
Formation-free multi-level resistive switching characteristics by using 10 nm-thick polycrystalline GeO
Impact of the device size and thickness Al2O3 film on Cu pillars resistive switching memory characteristics Al/Cu/Al2O3/TiN structures have been investigated for first time. The 18 nm are observed by transmission electron microscope image. 20-nm-thick films used pillar formation (i.e., stronger filaments) in structures, which can be three-dimensional (3D) cross-point architecture as reported previously Nanoscale Res. Lett.9:366, 2014. Fifty randomly picked devices with sizes ranging from 8 ×...
A novel idea by using copper (Cu) pillar is proposed in this study, which can replace the through-silicon-vias (TSV) technique future three-dimensional (3D) architecture. The Cu formation under external bias an Al/Cu/Al2O3/TiN structure simple and low cost. formed Al2O3 film a small operation voltage of <5 V high-current-carrying conductor >70 mA obtained. More than 100 devices have shown tight distribution pillars for high current compliance (CC) 70 mA. Robust read pulse endurances >106...