A5029727411- Advanced Sensor and Control Systems
- Advanced Algorithms and Applications
- Structural Engineering and Vibration Analysis
- Metallic Glasses and Amorphous Alloys
- Adaptive Control of Nonlinear Systems
- Semiconductor Quantum Structures and Devices
- Industrial Technology and Control Systems
- Semiconductor Lasers and Optical Devices
- Machine Learning in Materials Science
- Vibration and Dynamic Analysis
- Magnetic Properties and Applications
- Magnetic properties of thin films
- Metal and Thin Film Mechanics
- GaN-based semiconductor devices and materials
- Photonic and Optical Devices
- Inorganic Chemistry and Materials
- Aerospace Engineering and Control Systems
- Semiconductor materials and devices
- Remote Sensing and Land Use
- Stability and Control of Uncertain Systems
- Technology and Security Systems
- Civil and Geotechnical Engineering Research
- Fluid Dynamics and Vibration Analysis
- Magnetic Properties of Alloys
- Advancements in Photolithography Techniques
Chongqing University
2025
Tongji University
2005-2024
Shanghai Jiao Tong University
2008-2024
Shanghai Skin Disease Hospital
2022
Nanjing University of Aeronautics and Astronautics
2004-2021
Shanghai Pulmonary Hospital
2021
Shenzhen Institutes of Advanced Technology
2020
State Grid Corporation of China (China)
2016-2019
State Grid Hunan Electric Power Company Limited
2019
AviChina Industry & Technology (China)
2016-2017
One of the key challenges to X-ray security check is detect overlapped items in backpacks or suitcases images. Most existing methods improve robustness models object overlapping problem by enhancing underlying visual information such as colors and edges. However, this strategy ignores situations that objects have similar clues background, each other. Since two cases rarely appear datasets, we contribute a novel dataset – Cutters Liquid Containers Dataset (CLCXray) complete related research....
Graph representation learning has now become the de facto standard when dealing with graph-structured data. Using powerful tools from deep and graph neural networks, recent works have applied to time-evolving dynamic graphs showed promising results. However, all previous models require labeled samples train, which might be costly acquire in practice. Self-supervision offers a principled way of utilizing unlabeled data achieved great success computer vision community. In this paper we propose...
Low-resolution text images are very commonplace in real life and their information is hard to be extracted by using existing recognition methods only. Although this problem can solved introducing super-resolution (SR) techniques, most SR fail process stroke regions background of input distinctively. In paper, we propose a text-specific network named Text Enhanced Attention Network (TEAN) solve problem. First all, compensate for disadvantages traditional thresholding mask operation proposed...
Growth of very high quality unintentionally doped InP by low pressure metalorganic vapor phase epitaxy using solid trimethylindium as the indium source is described. Hall mobilities 5370 cm2/Vs (300 K) and 131 600 (77 with residual carrier concentration 2.5×1014 cm−3 have been obtained. Low-temperature photoluminescence exciton spectra revealed that neutral acceptor-bound-exciton emission was hardly observable, indicating a compensation ratio.
Due to the decentralization, irreversibility, and traceability, blockchain has attracted significant attention been deployed in many critical industries such as banking logistics. However, micro-architecture characteristics of programs still remain unclear. What's worse, large number events make understanding extremely difficult. We even lack a systematic approach identify important focus on. In this paper, we propose novel benchmarking methodology dubbed BBS characterize at level. The key...
The growth of unintentionally doped indium phosphide by low pressure metalorganic chemical vapor deposition (LPMOCVD) using triethlylindium and phosphine has been investigated temperature photoluminescence (PL). Pregrowth annealing was found to result in improved crystalline quality the seed surface. predominant acceptor impurity on annealed substrate surface initial epitaxial region (1200 Å) shown be carbon. major thicker epilayers further away from interface determined Zn. Silicon also...
The uninterrupted growth of high quality GaInAs layers on InP buffers by atmospheric pressure metalorganic chemical vapor deposition using trimethylindium is reported. A lattice mismatch smaller than 4.3×10−4 and low-temperature photoluminescence exciton linewidth 2.6 meV have been obtained, along with best 300-K, 77-K, 4.2-K Hall mobilities 11 200, 64 000, 80 000 cm2/Vs, respectively. Such mobility values at 4.2 K are explained the existence a two-dimensional electron gas demonstrate...
A new nitride semiconductor, single crystalline ZnGeN 2 has been successfully grown by MOCVD for the first time. The epitaxial is found to be of hexagonal wurtzite lattice without ordering zinc and germanium atoms in pseudomorphic Group III sublattice. Lattice constants are a = 3.186 ± 0.007 A, c 5.174 0.012 which gives c/a 1.624.
This letter presents a study of optical phonon modes single-crystalline orthorhombic ZnSiN2 semiconductor epitaxially deposited on r-sapphire. An epitaxial relationship for film was found from x-ray diffraction to be (0k0)ZnSiN2‖(10 1̄2)Al2O3 and [100]ZnSiN2‖(12̄10)Al2O3. Six B1 were revealed in 400–1000 cm−1 range s-polarized infrared reflectance spectra. is consistent with the analysis symmetry selection rules presented. The frequencies transversal longitudinal components, damping,...
High-quality modulation doped In0.53Ga0.47As/InP heterostructures have been grown by atmospheric pressure metalorganic chemical-vapor deposition (MOCVD) using solid trimethylindium source. The two-dimensional nature of electrons bound in the heterojunctions is proved a Shubnikov-de Haas effect experiment. Electron Hall mobilities as high 12000, 83000, 98000, and 92000 cm2/V s at 300, 77, 40, 4.2 K are obtained, respectively. electron effective mass measured to be m*CR =0.043 m0 cyclotron...
SrxBa1−xNb2O6 films have been epitaxially grown on MgO substrates by a single-source plasma-enhanced chemical vapor deposition (PE-CVD). Exceptionally high quality of the epitaxial was observed as indicated high-resolution synchrotron x-ray diffraction imaging. The exhibit waveguiding behavior with values refractive index and linear electro-optic coefficient r51 close to those bulk crystals.