This paper presents the first printed organic 13-MHz RFID on flexible substrate. The proposed solution includes a planar near field antenna bonded to an tag, which is foil using complementary TFT technology. Thanks active envelope detector, ASK modulation with depth as low 20% can be adopted increase available input power for rectifier. functionality demonstrated at internally generated supply voltage of 24 V, reading range 2-5 cm and bit-rate up 50 bit/s. With more than 250 transistors same...

This paper presents the design and experimental results of advanced analog blocks manufactured in a printed complementary organic TFT technology on flexible foil. Operational transconductance amplifiers exhibiting open-loop gain from 40 to 50 dB gain-bandwidth product 55 Hz 1.5 kHz have been implemented by using different circuit topologies. An extensive amplifier characterization both time frequency domain (i.e., gain, product, phase margin, settling time, harmonic distortion) has carried...

This brief gives an overview of recent advancements in CMOS automotive radar sensors, focusing on the most critical circuit design at mm-wave frequencies. Highly scaled technologies enable very low-power consumption, reduced costs, and higher data processing capacity integration compared to state-of-the-art SiGe BiCMOS chip-set solutions commonly adopted commercial products. The bottleneck is still represented by radio front-end due challenging requirements long-range radars. Circuit...

This paper presents an on–off power control technique for galvanically isolated dc–dc converters, which implements a feedback loop regulation on the same isolation transformer used transfer. To this aim, oscillator is controlled with PWM scheme, and signal transmitted through galvanic barrier by using ASK modulation that acts secondary winding of transformer. The key building block proposed architecture PLL allows reconstruction when turned off data transmission disabled. effectiveness...

The analysis and modeling of monolithic stacked transformers fabricated in a high-speed silicon bipolar technology is addressed. On-wafer experimental measurements are employed to investigate the effect layout scaling on transformer performance parameters (i.e., self-resonance frequency, magnetic coupling coefficient, insertion loss). Based this analysis, wideband lumped model developed, whose related technological data through closed-form expressions. Model accuracy demonstrated by...

Galvanic isolation is becoming an essential requisite for several low-power applications, such as sensor interfaces and medical devices. In the last years, different solutions of silicon-integrated data transmission with galvanic have been proposed that are based on RF links [1], capacitive couplings [2] or integrated coreless transformers [3]. As far power transfer concerned, a dedicated link exploiting discrete transformer typical solution. State-of-the-art devices currently adopt...

This article presents a W-band power amplifier (PA) for automotive radar applications. It was designed in 28-nm fully depleted silicon-on-insulator CMOS technology with transition frequency of around 270 GHz and standard back-end-of-line. The circuit adopts pseudo-differential topology coupling transformers, which allow both compact matching networks layout-optimized interstage interconnections. stage exploits transformer-based folded-cascode structure that is very suitable low-voltage...

A lumped scalable model for spiral inductors in silicon bipolar technology has been developed. The effect of three different cross sections on inductor performance was first investigated by comparing experimental measurements. Using both the results this analysis and three-dimensional electromagnetic simulation guidelines, several circular were integrated a radial patterned ground shield validation purposes. employs novel equation series resistance with only one fitting parameter extracted...

Radar-based advanced safety systems are crucial to reduce road accidents caused by driver inattention. An actual and pervasive adoption of radar technology requires the development low-cost Silicon-integrated sensors, including microwave, analog, digital blocks on a single chip, able replace existing discrete electronics based compound semiconductors. Indeed, considerable advantage silicon lies in its natural capability for integration that will enable higher level complexity such sensors....

This paper presents a pseudodifferential power amplifier for 77-GHz automotive radar. The circuit is fabricated in SiGe HBT BiCMOS technology featuring bipolar transistors with <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">fT</i> / xmlns:xlink="http://www.w3.org/1999/xlink">f</i> <sub xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> of 230/280 GHz. adopts transformer-coupling current-reuse approach to improve both gain and efficiency. An...

In the last several years, organic electronics have gained increasing consideration as a cost-effective alternative to silicon, especially in RFID applications. An inductive-coupled operating at 13.56MHz was demonstrated on foil using p-type technologies [1]. A complementary technology used for transponder [2]. Recently, hybrid organic/metal-oxide process exploited demonstrate bidirectional communication an HF [3]. It adopts passive envelope detection traditional diode-based schemes with OOK...

This paper presents an organic sensor for ambient light monitoring fabricated on flexible plastic foil. The exploits photodiode whose photocurrent is linearly converted into output voltage by a transconductance operational amplifier in feedback configuration. based inkjet printed bulk heterojunction blend of P3HT/PCBM sandwiched between Au and Al electrodes, whereas the implemented complementary TFT technology. Both were fully characterized stand-alone Then, response assembled was measured...

This paper presents a fully integrated galvanically isolated dc-dc converter with data communication. The converter, which is fabricated in 0.35-μm BCD technology, made up of only two silicon dice and adopts 6-kV on-chip transformers. It takes advantage customized architecture, uses the power control link to transfer bidirectional half-duplex data, thus reducing overall area package size. proposed delivers 93-mW output 19% maximum efficiency an voltage ranging from 2.4 V 3.3 V, while...

This paper reviews state-of-the-art approaches for galvanically isolated DC-DC converters based on radio frequency (RF) micro-transformer coupling. Isolation technology, integration level and fabrication issues are analyzed to highlight the pros cons of fully integrated (i.e., two chips) multichip systems-in-package (SiP) implementations. Specifically, different basic isolation technologies compared, which exploit thick-oxide polyimide standalone transformers, respectively. To this aim,...

This paper presents a 77-GHz automotive radar receiver in 28-nm fully depleted silicon-on-insulator CMOS technology. It exploits mixer-first direct-conversion architecture to trade-off noise and linearity performance. The is composed of downconverter, variable-gain amplifier, switched-capacitor low-pass filter. adopts an effective robust approach for leakage suppression due the TX RX crosstalk, which overcomes both gain limitations. draws overall quiescent current as low 27 mA from 1-V...

In this paper, a design methodology for the optimization of transformer-loaded RF circuits is presented. The procedure based on novel figure merit integrated transformer (namely characteristic resistance), which was introduced to quantify its performance when operated as tuned load. Using proposed approach, highly linear up-converter 5-GHz wireless LAN applications implemented in 45-GHz-f/sub T/ SiGe HBT technology. circuit achieved an output 1-dB compression point 4.5 dBm and power gain 18...

This paper presents the design and experimental characterization of a power transfer system performing dc-dc conversion with on-chip galvanic isolation. The converter is operated in VHF band, which enables fully integration all required components silicon technology. It consists only two dice, i.e., oscillator an isolation transformer full-bridge rectifier, are fabricated 0.35-μm BCD 0.13-μm CMOS technology, respectively. A thick SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...

This brief presents a fully integrated dc-dc converter consisting of only two CMOS chips, which are power oscillator with an transformer and full-bridge rectifier. A thick inter-metal oxide layer guarantees galvanic isolation rating as high 5 kV. current-reuse hybrid-coupled is proposed, based on three-winding tapped improves both output silicon area occupation respect to previous works. The operated at 5-V supply able deliver up 300-mW dc 10-V voltage while exhibiting density efficiency 36...

This paper presents a 15-dBm power amplifier for 77-GHz automotive radar applications, which is fabricated in 0.13-μm SiGe:C BiCMOS process featuring bipolar transistors with f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> /f xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> of 230/280 GHz. The circuit consists two-stage pseudodifferential cascode fully integrated input/output matching networks. State-of-art performance achieved the...

This paper presents a Colpitts-based voltage-controlled oscillator (VCO) for <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">W</i> -band radar applications. In the proposed circuit, oscillation signal is directly drawn from switching transistor bases by means of primary winding transformer tank, while secondary drives output buffer. solution improves both tuning range and swing with respect to traditional millimeter-wave VCO topologies without...

This paper presents a galvanically isolated power transfer system based on two inductively coupled CMOS oscillators with on-chip isolation transformer. The share the same current and are loaded by an integrated transformer that performs combining of oscillation signals at its secondary winding output. By using thick inter-metal oxide layer for transformer, galvanic rating as high 5 kV is guaranteed. Thanks to proposed circuit topology, 300-mW dc-ac conversion performance excellent 36.5%...

This focus paper gives a panorama of galvanically isolated power/data transfer systems. It starts from review state-of-the-art isolation technologies and describes most advanced system architectures. Among these, approaches capable reducing the number links, while preserving power data functionalities will be presented. Main research aims such as improvement rating, rate, level efficiency, along with isolator size cost considered.

This paper presents a 24-GHz transmitter for ultra-wideband short-range radar applications fabricated in 0.13-µm SiGe:C BiCMOS technology. The circuit is composed of frequency synthesiser, based on voltage-controlled oscillator an N-integer phase-locked loop (PLL), RF switch delivering 0-dBm output power, and tunable rectangular pulse generator, whose width covers range between 0.5 1.2 ns. has been developed flip-chip bumping assembly module with UWB antenna. Assuming 10.5-dBi antenna gain,...

This paper presents a SiGe BiCMOS transmitter chipset for 24/77-GHz automotive radar sensors. The adopts dual-band architecture consisting of 24-GHz section ultra-wideband short-range operation, which is able to drive the 77-GHz long-range front-end. proposed solution allows using single frequency synthesizer implement both operation modes. demonstrates an output power 12 dBm, gain 20 dB and output-referred 1-dB compression point 11 while drawing 155 mA from 2.5-V supply voltage.