A5050554959- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- GaN-based semiconductor devices and materials
- Organic Electronics and Photovoltaics
- Ga2O3 and related materials
- Integrated Circuits and Semiconductor Failure Analysis
- Thin-Film Transistor Technologies
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and interfaces
- Conducting polymers and applications
- Advanced Sensor and Energy Harvesting Materials
- Organic Light-Emitting Diodes Research
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Radio Frequency Integrated Circuit Design
- ZnO doping and properties
- Tactile and Sensory Interactions
- Semiconductor Quantum Structures and Devices
- Molecular Junctions and Nanostructures
- Silicon and Solar Cell Technologies
- VLSI and Analog Circuit Testing
- Low-power high-performance VLSI design
- Elevator Systems and Control
- Advancements in Photolithography Techniques
- Electrostatic Discharge in Electronics
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2014-2023
Université Grenoble Alpes
2008-2023
CEA LETI
2007-2023
CEA Grenoble
2008-2023
Institut polytechnique de Grenoble
2007-2022
CEA LITEN
2009-2017
Institut de Microélectronique, Electromagnétisme et Photonique
2010
Micro and Nanotechnology Innovation Centre
2010
Japan Science and Technology Agency
2010
RIKEN
2010
A new mobility degradation specific to short channel MOSFETs is studied and elucidated. Pocket implants/dopants pile-up, interface states/oxide charges, remote Coulomb scattering or ballisticity are insufficient explain this degradation. The role of non-Coulombian (neutral) defects, which can be healed by increasing the annealing temperature, evidenced
A modified transmission-line method (TLM) for organic transistors contact resistance extraction is proposed. It shown that the issues of conventional TLM reside in channel scattering due to parameter variations. These difficulties are overcome TLM, which linear regression slope directly controlled by rather than as TLM. Much smaller transistor-to-transistor dispersion results a more stable and reliable method. Moreover, an error study simulation has been carried out, confirming greater accuracy
This paper presents an electrical analysis of mechanical stress induced by shallow trench isolation (STI) on MOSFETs advanced 0.13 /spl mu/m bulk and silicon-on-insulator (SOI) technologies. By applying external calibrated stress, we present piezoresistive coefficients measurements these technologies, compare small long transistors responses, evidencing the strong effect source drain resistance R/sub sd/. Then, using same approach short devices with different gate-edge-to-STI distances,...
A new concept of dielectric pockets is proposed allowing suppression short-channel effects (SCEs) and DIBL without increasing the channel doping. The have been implanted into 0.15-/spl mu/m PMOS devices showing substantial efficiency in reducing SCE I/sub OFF/ current altering drive. thus embody ideal pocket architecture.
Drastic efforts have been realized these last years in order to develop comple mentary organic technology. This is the essential key produce elementary low cost circuits for digital and analog applications. Different techniques are available nowadays obtain both Nand/or P-type devices. Screen printing one of most highly awaited low-cost that can be used devices circuits. It has widely organ ic technologies. Now N-type semiconductors become much more easily processed, developers seeking a...
In this paper we present the development of enhanced printed temperature sensors on large area flexible substrates . The process flow is a fully screen technology that uses exclusively solution-processed materials. These Screen are based resistive pastes integrated in Wheatstone bridge circuit Substrate commercial Poly Ethylene Naphtalate (PEN) with thickness 125 µm. Functional demonstrated and characterized good electrical properties, showing sensitivity 0.06 V/°C at V =4.8 V. This by...
Understanding the impact of GaN surface treatment conditions on dielectric/GaN interface chemical properties is critically important for device performance. This point under intensive research structure because does not have a good native oxide quality such as SiO2 used in silicon technologies. The effects different wet treatments prior to atomic layer deposition (ALD) thin Al2O3 Ga-polar were studied by X-ray photoelectron spectroscopy (XPS). same been applied recessed region AlGaN/GaN...
The aggressive scaling of the gate oxide leads to direct tunneling current, which affects floatingbody effects in partially-depleted SOI MOSFETs. Experiments and simulations show that gate-to-body current charges body causing an unexpected ‘kink’ effect occur at low drain voltage. This kink results a second peak transconductance, whose time-dependent behavior practical consequences are investigated.
A study of carrier transport in top-gate and bottom-contact TIPS-pentacene organic field-effect transistors (OFETs) based on mobility is presented. Among three mobilities extracted by different methods, the low-field obtained Y function exhibits best reliability ease for use, whereas widely applied not reliable, particularly short-channel at low temperatures. detailed contact reveals its strong impact transistors, suggesting that a more intrinsic analysis better implemented relatively...
An analytical and physically based expression of organic solar cell I-V characteristic under dark illuminated conditions has been derived. This model found in very good agreement with both experimental data drift-diffusion numerical simulations accounting for the coupling Poisson equation optical propagation.
This work is a reinvestigation of the impact blend morphology and thermal annealing on electrical performance regioregular‐P3HT:PC 60 BM bulk heterojunction organic solar cells. The morphological, structural, properties are experimentally investigated with atomic force microscopy, X‐ray diffraction, time‐of‐flight measurements. Current–voltage characteristics photodiode devices measured in dark under illumination. Finally, existence exponential electronic band tails due to gap states...
This paper presents an organic sensor for ambient light monitoring fabricated on flexible plastic foil. The exploits photodiode whose photocurrent is linearly converted into output voltage by a transconductance operational amplifier in feedback configuration. based inkjet printed bulk heterojunction blend of P3HT/PCBM sandwiched between Au and Al electrodes, whereas the implemented complementary TFT technology. Both were fully characterized stand-alone Then, response assembled was measured...
MOS High Electron Mobility Transistors (MOS-HEMTs) may suffer from VTH instability and hysteresis reducing device performances. Post-Deposition Anneal (PDA) of the Atomic-Layer Deposited (ALD) dielectric has potential to increase MOS-HEMT performances but needs be compatible with actual integration (at CEA Leti: fully recessed Gate First MOS-channel HEMT process flow). In this work, impact different PDA temperatures on flat-band voltage (VFB) its (ΔVFB) for Al2O3 deposited etched GaN...
This paper presents a printed organic complementary technology on flexible plastic substrate with high performance N and P-type Organic Thin Film Transistors (OTFTs), based small-molecule semiconductors in solution. Challenges related to the integration of both OTFT types common flow are addressed, showing importance surface treatments. Data single devices elementary digital circuits (inverters ring oscillators) presented, demonstrating that robust reliable electrical performances can be...
In this paper, we investigate the influence of negative gate stress on threshold voltage V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> instabilities in GaN-on-Si devices. This study has been carried out by using ultra-fast Measurement-Stress-Measurement (MSM) procedure E-mode MOSc-HEMTs (Enhancement-mode MOS-channel HEMTs) for different lengths L xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> . NBTI transients at temperatures...
The power spectral density of low-frequency noise in contact resistance, SRsd, organic transistors is evaluated by the transfer-line method. obtained gate-voltage dependent SRsd then normalized square which extracted from dc current-voltage (I-V) measurements. After normalization, slightly variable and nearly constant SRsd/Rsd2 with respect to gate voltage are range 10−7–10−6 μm/Hz at 20 Hz p-type n-type devices, respectively. This method proves suitable investigate separately origin sources...
Flexibility will significantly expand the application scope of electronics, particularly large-area electronics. Over last 10 years, printed organic electronic is believed to be one next major technological breakthroughs in field microelectronic and use printing technology process field-effect transistors (OFETs) opens promising perspectives for low-cost, circuits integrated on flexible, plastic substrates. With amorphous polymer-based thin film acceptable electrical performances are now...
Bottom-contact organic thin-film transistors with active layers made of n-type small-molecule perylene diimide Polyera ActivinkTM N1400 were fabricated and compared those 6,13-bis (triisopropylsilylethinyl)pentacene poly(triarylamine) (PTAA). For the three devices, mobility values distribution density states (DOS) estimated from current-voltage measurements. The value samples increases up to four orders magnitude within measured voltage range, reaching PTAA at high gate voltages. Finally, we...
A modeling of organic field-effect transistors’ (OFETs’) electrical characteristics is presented. This model based on a one-dimensional (1-D) Poisson’s equation solution that solves the potential profile in semiconducting film. Most importantly, it demonstrates that, due to common open-surface configuration used transistors, conduction occurs film volume below threshold. because at free surface not fixed zero but rather rises also with gate bias. The tail carrier concentration therefore...
Nowadays, the haptic effect is used and developed for many applications—particularly in automotive industry, where mechanical feedback induced by a system enables user to receive information while their attention kept on road driving. This article presents development of vibrotactile button based printed piezoelectric polymer actuation. Firstly, characterization electro-active as actuator model able predict electromechanical behavior this device are summarized. Then, design circular...