A5001541588- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Nanowire Synthesis and Applications
- Ferroelectric and Negative Capacitance Devices
- Thin-Film Transistor Technologies
- Organic Electronics and Photovoltaics
- Semiconductor Quantum Structures and Devices
- Advanced Memory and Neural Computing
- Electrostatic Discharge in Electronics
- Quantum and electron transport phenomena
- Low-power high-performance VLSI design
- Semiconductor materials and interfaces
- Quantum-Dot Cellular Automata
- Conducting polymers and applications
- Transition Metal Oxide Nanomaterials
- Silicon and Solar Cell Technologies
- CCD and CMOS Imaging Sensors
- Radio Frequency Integrated Circuit Design
- Analytical Chemistry and Sensors
- Nanotechnology research and applications
- Advanced DC-DC Converters
- Gas Sensing Nanomaterials and Sensors
- Silicon Nanostructures and Photoluminescence
Institut polytechnique de Grenoble
2015-2024
Institut de Microélectronique, Electromagnétisme et Photonique
2015-2024
Centre National de la Recherche Scientifique
2008-2024
Université Grenoble Alpes
2014-2024
Université Savoie Mont Blanc
2022-2023
Sinano Institute
2008-2021
Micro and Nanotechnology Innovation Centre
2010-2020
Los Angeles Harbor College
2013
CEA Grenoble
1988-2010
CEA LITEN
2010
The double-gate control of silicon-on-insulator (SOI) transistors is used to force the whole silicon film (interface layers and volume) in strong inversion. This original method transistor operation offers excellent device performance, particular great increases subthreshold slope, transconductance, drain current. A simulation program experiments on SIMOX structures are study new device.
An improved analysis of low frequency trapping noise in a MOS device is proposed. This takes into account the supplementary fluctuations mobility induced by those interface charge. It enables an adequate description gate voltage dependence input equivalent to be obtained various actual situations. The outputs given Hooge fluctuation model are also presented and discussed with respect carrier number model. In particular, impact channel length or width, type on drain current characteristics...
Analytical models are proposed for thin- and ultra-thin film silicon-on-insulator (SOI) MOSFETs operating in weak or strong inversion. The take into account all the device parameters. cases of two three interfaces with a silicon substrate considered modeling compared one another. These give main electrical MOSFET parameters ohmic operation (subthreshold swing threshold voltage) these structures. basic approximation is consideration linearly varying potential Si film, which has been inferred...
A modified transmission-line method (TLM) for organic transistors contact resistance extraction is proposed. It shown that the issues of conventional TLM reside in channel scattering due to parameter variations. These difficulties are overcome TLM, which linear regression slope directly controlled by rather than as TLM. Much smaller transistor-to-transistor dispersion results a more stable and reliable method. Moreover, an error study simulation has been carried out, confirming greater accuracy
Abstract Conjugated polymers came to an unprecedented epoch that the charge transport is limited only by small disorder within aggregated domains. Accurate evaluation of performance thus vital optimizing further molecule design. Yet, routine method means conventional field‐effect transistors may not satisfy such a requirement. Here, it shown extrinsic effects Schottky barrier, access through semiconductor bulk, and concurrent ambipolar conduction seriously influence analysis. The planar...
Abstract The reliability of mobility has come to be a critical issue the development new electronics especially for organic electronics, since is typically extracted from field‐effect transistors containing various extrinsic effects and overestimation popular in literature. Recently, this emphasized factor ( r ) proposed by pioneers gauge reported. Albeit many factors discussed, how much influence remains unrevealed facile solution using still lacking. Here, it shown that widely used...
The physics and performance of various advanced semiconductor devices, which are the most promising for end ITRS roadmap, investigated in a wide temperature range down to 20 K. transport parameters front and/or back channels fully depleted ultrathin film SOI Trigate, FinFET, Omega-gate nanowire FET 3D-stacked SiGe FETs, fabricated with high-k dielectrics/metal gate, elevated source/drain, different channel orientations, shapes strains, addressed. impacts gate length, Si wire diameter 10 nm,...
Abstract Unreliable mobility values, and particularly greatly overestimated values severely distorted temperature dependences, have recently hampered the development of organic transistor field. Given that field‐effect transistors (OFETs) been routinely used to evaluate mobility, precise parameter extraction using electrical properties OFETs is thus primary importance. This review examines origins various mobilities must be determined for OFET applications, relevant methods, data selection...
The performance and the physical properties of SIMOX (separation by implantation oxygen) MOS transistors are studied from room to liquid helium temperatures with particular emphasis on behavior carrier mobility, threshold voltage, subthreshold swing, leakage current, kink effect. Various substrates, such as partially depleted films annealed at low or high temperature ultrathin (100 nm), analyzed compared. Enhancement- depletion-mode devices different doping levels, channel lengths,...
An analysis of the kink effect in MOS transistors that provides a comprehensive view bulk silicon MOSFETs and SOI devices is presented. This enables quantitative description excess drain current to be obtained for room liquid-helium temperatures. In particular, it found transistor can simply modeled by body effect.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
A study of carrier transport in top-gate and bottom-contact TIPS-pentacene organic field-effect transistors (OFETs) based on mobility is presented. Among three mobilities extracted by different methods, the low-field obtained Y function exhibits best reliability ease for use, whereas widely applied not reliable, particularly short-channel at low temperatures. detailed contact reveals its strong impact transistors, suggesting that a more intrinsic analysis better implemented relatively...
Inspired by the silicide technology in manufacturing silicon devices and ongoing lack of knowledge on post-metallization annealing realizing oxide devices, we investigated post-contact for solution-processed InGaZnO transistors. Low-temperature air is found to significantly improve device uniformity, reproducibility, subthreshold charge transport. However, this method highly dependent employed contact metal. Detailed examination using Al, Au, Cu reveals that physics a metal/semiconductor...