A5050412589- ZnO doping and properties
- Thin-Film Transistor Technologies
- Perovskite Materials and Applications
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Conducting polymers and applications
- Ion channel regulation and function
- Cardiac electrophysiology and arrhythmias
- Advanced Memory and Neural Computing
- Copper-based nanomaterials and applications
- Gas Sensing Nanomaterials and Sensors
- Transition Metal Oxide Nanomaterials
- Advanced Sensor and Energy Harvesting Materials
- Neuroscience and Neural Engineering
- Analytical Chemistry and Sensors
- Organic Electronics and Photovoltaics
- 2D Materials and Applications
- Advanced Chemical Sensor Technologies
- Nanowire Synthesis and Applications
- Electronic and Structural Properties of Oxides
- Ga2O3 and related materials
- Advancements in Semiconductor Devices and Circuit Design
- Organic Light-Emitting Diodes Research
- Advanced Photocatalysis Techniques
- Additive Manufacturing and 3D Printing Technologies
University of Electronic Science and Technology of China
2008-2025
Chinese Academy of Sciences
2021-2025
Microbiology Institute of Shaanxi
2021-2025
Institute of Microbiology
2021-2025
Jinan Stomatological Hospital
2014-2025
Harbin Institute of Technology
2021-2025
Shandong Academy of Agricultural Sciences
2015-2025
Shenyang University of Chemical Technology
2025
Chinese Academy of Agricultural Sciences
2024-2025
Oil Crops Research Institute
2025
Compared with the n-i-p structure, inverted (p-i-n) perovskite solar cells (PSCs) promise increased operating stability, but these photovoltaic often exhibit lower power conversion efficiencies (PCEs) because of nonradiative recombination losses, particularly at perovskite/C60 interface. We passivated surface defects and enabled reflection minority carriers from interface into bulk using two types functional molecules. used sulfur-modified methylthio molecules to passivate suppress through...
Oxide electronic materials provide a plethora of possible applications and offer ample opportunity for scientists to probe into some the exciting intriguing phenomena exhibited by oxide systems interfaces. In addition already diverse spectrum properties, nanoscale form oxides provides new dimension hitherto unknown due increased surface-to-volume ratio.
Abstract The p-type characteristic of solution-processed metal halide perovskite transistors means that they could be used in combination with their n-type counterparts, such as indium–gallium–zinc-oxide transistors, to create complementary metal–oxide–semiconductor-like circuits. However, the performance and stability perovskite-based do not yet match which limit broader application. Here we report high-performance p-channel thin-film based on inorganic caesium tin triiodide semiconducting...
Abstract Studies on printable semiconductors and technologies have increased rapidly over recent decades, pioneering novel applications in many fields, such as energy, sensing, logic circuits, information displays. The newest display are already turning to metal oxide semiconductors, i.e., indium gallium zinc oxide, for the improvements needed drive active matrix organic light‐emitting diodes. Convenience portability will be realized with flexible wearable displays future. This report...
Although organic-inorganic halide perovskites continue to generate considerable interest due great potentials for various optoelectronic devices, there are some critical obstacles practical applications, including lead toxicity, relatively low field-effect mobility, and strong hysteresis during operation. This paper proposes a universal approach significantly improve mobility operational stability with reduced dual-sweep perovskite-based thin film transistors (TFTs) by coupling...
Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited due to ion migration and large organic spacer isolation. Herein, we report hysteresis-free p-channel thin-film (TFTs) based methylammonium tin iodide (MASnI3) rationalise effects (I/Br/Cl) anion engineering film quality improvement tin/iodine vacancy suppression, realising high hole mobilities 20...
Abstract Tin halide perovskites have the general chemical formula ASnX 3 , where A is a monovalent cation and X anion. These semiconducting materials can be used to fabricate p-type transistors at low cost temperature could potentially integrated with n-type oxide-based create complementary circuits. However, suffer from crystallization controllability high film defect density, resulting in uncompetitive device performance. Here we show that pure-tin perovskite thin-film created using triple...
Abstract Compared to polycrystalline semiconductors, amorphous semiconductors offer inherent cost-effective, simple and uniform manufacturing. Traditional hydrogenated Si falls short in electrical properties, necessitating the exploration of new materials. The creation high-mobility n-type metal oxides, such as a-InGaZnO (ref. 1 ), their integration into thin-film transistors (TFTs) have propelled advancements modern large-area electronics new-generation displays 2–8 . However, finding...
Poor selectivity of titania (TiO2) photocatalysis is unfavorable to photocatalytic removal highly toxic low-level organic pollutants in polluted waters the presence other less high-level pollutants. A new strategy increasing this surface modification TiO2 via coating a thin layer molecular imprinted polymer (MIP), which provides recognition ability toward template molecules. By using 2-nitrophenol and 4-nitrophenol as target pollutants, MIP-coated photocatalysts were prepared imprinting...
We reported here "aqueous-route" fabrication of In2O3 thin-film transistors (TFTs) using an ultrathin solution-processed ZrOx dielectric thin film. The formation and properties films under various annealing temperatures were intensively examined by thermogravimetric analysis, Fourier transform infrared spectroscopy, atomic force microscopy. film followed sequential UV/ozone treatment low-temperature thermal-annealing processes showed amorphous structure, a low leakage-current density (∼1 ×...
Here, a simple, nontoxic, and inexpensive “water‐inducement” technique for the fabrication of oxide thin films at low annealing temperatures is reported. For water‐induced (WI) precursor solution, solvent composed water without additional organic additives catalysts. The thermogravimetric analysis indicates that temperature can be lowered by prolonging time. A systematic study carried out to reveal condition dependence on performance thin‐film transistors (TFTs). WI indium‐zinc (IZO) TFT...
Low‐temperature solution processing opens a new window for the fabrication of oxide semiconductors due to its simple, low cost, and large‐area uniformity. Herein, by using combustion synthesis (SCS), p‐type Cu‐doped NiO (Cu:NiO) thin films are fabricated at temperature lower than 150 °C. The light doping Cu substitutes Ni site disperses valence band matrix, leading an enhanced conductivity. Their integration into thin‐film transistors (TFTs) demonstrates typical semiconducting behavior....
Solution‐processed metal‐oxide thin films based on high dielectric constant ( k ) materials have been extensively studied for use in low‐cost and high‐performance thin‐film transistors (TFTs). Here, scandium oxide (ScO x is fabricated as a TFT with excellent electrical properties using novel water‐inducement method. The are annealed at various temperatures characterized by X‐ray diffraction, atomic‐force microscopy, photoelectron spectroscopy, optical series of measurements. optimized ScO...
Abstract Here, room‐temperature solution‐processed inorganic p‐type copper iodide (CuI) thin‐film transistors (TFTs) are reported for the first time. The spin‐coated 5 nm thick CuI film has average hole mobility ( µ FE ) of 0.44 cm 2 V −1 s and on/off current ratio × 10 . Furthermore, increases to 1.93 operating voltage significantly reduces from 60 by using a high permittivity ZrO dielectric layer replacing traditional SiO Transparent complementary inverters composed n‐type indium gallium...