By considering the qualitative benefits associated with solution rheology and mechanical properties of polymer semiconductors, it is expected that polymer-based electronic devices will soon enter our daily lives as indispensable elements in a myriad flexible ultra low-cost flat panel displays. Despite more than decade research focused on designing synthesizing state-of-the-art semiconductors for improving charge transport characteristics, current mobility values are still not sufficient many...

A record-breaking high electron mobility of 7.0 cm2V−1s−1 for n-channel polymer OFETs is reported. By the incorporation only one nitrile group as an electron-withdrawing function in vinyl linkage DPP-based copolymer, a dramatic inversion majority charge-carriers from holes to electrons achieved.

An organic field-effect transistor (OFET) memory device based on pentacene is fabricated using an additional poly(α-methyl styrene) gate dielectric layer (PαMS, see figure) that has charge-trapping ability (an electret). The excellent non-volatile OFET characteristics, believed to originate from the stored charges in PαMS and transferred semiconductor polymeric electret.

Abstract Here, an investigation of three‐dimensional (3D) morphologies for bulk heterojunction (BHJ) films based on regioregular poly(3‐hexylthiophene) (P3HT) and [6,6]‐phenyl‐C 61 ‐butyric acid methyl ester (PCBM) is reported. Based the results, it demonstrated that optimized post‐treatment, such as solvent annealing, forces PCBM molecules to migrate or diffuse toward top surface BHJ composite films, which induces a new vertical component distribution favorable enhancing internal quantum...

Abstract Here, room‐temperature solution‐processed inorganic p‐type copper iodide (CuI) thin‐film transistors (TFTs) are reported for the first time. The spin‐coated 5 nm thick CuI film has average hole mobility ( µ FE ) of 0.44 cm 2 V −1 s and on/off current ratio × 10 . Furthermore, increases to 1.93 operating voltage significantly reduces from 60 by using a high permittivity ZrO dielectric layer replacing traditional SiO Transparent complementary inverters composed n‐type indium gallium...

Pentacene organic field-effect transistors with multilayer graphene electrodes exhibit a lower contact resistance and charge-injection barrier height than those conventional Au electrodes. This enhancement in performance is related to the favorable dipole layer formation at graphene/pentacene interface. Detailed facts of importance specialist readers are published as "Supporting Information". Such documents peer-reviewed, but not copy-edited or typeset. They made available submitted by...

A new concept of a high-capacitance polymeric dielectric based on high-k polymer and ion gel blends is reported. This solid-state electrolyte gate insulator enables remarkable field-effect mobilities exceeding 10 cm2 V−1 s−1 for common other semiconductor families at VG ≤ 2 V owing to high areal capacitance (>4 µF cm−2) from combined polarization CF interface dipoles electrical-double-layer formation. As service our authors readers, this journal provides supporting information supplied by...

Considering there is growing interest in the superior charge transport ( E )‐2‐(2‐(thiophen‐2‐yl)‐vinyl)thiophene (TVT)‐based polymer family, an essential step forward to provide a deep and comprehensive understanding of structure–property relationships with their analogs. Herein, carefully chosen set DPP‐TVT‐n polymers are reported here, involving TVT diketopyrrolopyrrole (DPP) units that constructed combination varying thiophene content repeat units, where n number spacer units. Their OFET...

The effect of light irradiation on the characteristics organic field-effect transistors containing sexithiophene (6-T) and pentacene was examined. Organic phototransistors (OPTs) in which 6-T were incorporated fabricated. Their response behaviors investigated under conditions by either modulated or continuous ultraviolet with various intensities. Both devices showed two distinguishable responses, i.e., fast slow responses from photoconductive photovoltaic effects, respectively. is mainly...

Abstract Van der Waals (vdW) heterostructures with 2D materials have shown that atomically thin non‐volatile memories are advantageous in terms of integration, while offering high performance and excellent stability. The memory behavior has mainly been studied for single‐bit operation, there is growing interest expanding to multi‐bit operation enhance the storage capacities devices. However, conditions or rules generating desired number bits 2D‐based remain be identified. In this study,...

We report the characteristics of a p-n heterojunction diode comprised poly(3,4-ethylene-dioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) as hole-conducting p-type polymer and n-type ZnO nanowall networks. networks were synthesized on GaN/sapphire substrate without metal catalyst using hot-wall type organic chemical vapor deposition. The diodes PEDOT:PSS/ZnO exhibited space charge limited current phenomena at forward bias transient reverse recovery when sudden was applied from condition....

We report the fabrication of high-performance organic field-effect transistors (OFETs) and complementary inverters using spray-printed films n-type small-molecule semiconductors p-type conjugated polymers. Highly crystalline semiconductor could be obtained by controlling droplet size, nozzle-to-substrate distance, solvent drying speed during printing process. After optimisation spray-printing process, performances OFETs were comparable to those spin-coated inkjet-printed OFETs. In addition...

In this paper, a technique using mixed transition‐metal oxides as contact interlayers to modulate both the electron‐ and hole‐injections in ambipolar organic field‐effect transistors (OFETs) is presented. The cesium carbonate (Cs 2 CO 3 ) vanadium pentoixide (V O 5 are found greatly independently improve charge injection properties for electrons holes OFETs semiconductor of diketopyrrolopyrrolethieno[3,2‐b]thiophene copolymer (DPPT‐TT) electrodes molybdenum (Mo). When Cs V blended at various...

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We investigated preferentially oriented pentacene grains on rubbed polyimide (PI) layers under various conditions, such as substrate temperature and cumulative rubbing number. In case of thin films deposited PI at room (RT), compared to unrubbed, the field-effect mobilities were improved by two- threefold in contrast cases elevated temperature. From results crystalline in-plane orientation thin-film versus bulk-phase ratio, we proposed that pentacence a layer could be more favorable RT,...

We report the effects of gate bias sweep rate on electronic characteristics ZnO nanowire field-effect transistors (FETs) under different environments. As device was swept at slower rates, current decreased and threshold voltage shifted to a positive direction. These phenomena are attributed increased adsorption oxygen surface by longer biasing time. Adsorbed oxygens capture electrons cause depletion in channel. Different electrical trends were observed for FETs environments ambient air, N2,...

This study examines bilayer source-drain electrodes for organic thin-film transistors (OTFTs). Between the pentacene layer and Au layer, a p-type metal oxide was inserted. p-Type prepared by thermally evaporating copper (CuO). To compare effect of CuO device with single as electrode fabricated. The field-effect mobility , it higher than .

In this work, we develop a gate-tunable gas sensor based on MoS2/hBN heterostructure field effect transistor. Through experimental measurements and numerical simulations, systematically reveal principle that relates the concentration of target sensing signals (ΔI/I0) as function gate bias. Because linear relationship between ΔI/I0 guarantees reliable operation, optimal bias condition for linearity was investigated. Taking NO2 NH3 molecules, it is clarified greatly depends electron...

In article number 1802379, Yong Xu, Myung-Gil Kim, Yong-Young Noh, and co-workers develop room-temperature solution-processed, high-performance, solution-processible, reliable copper iodide (CuI) thin-film transistors (TFTs). These p-type CuI TFTs with a ZrO2 dielectric show impressively high field-effect mobility of 1.93 cm2 V−1 s−1 at low operating voltage 5 V. Transparent complementary inverters composed the n-type IGZO are demonstrated clear inverting characteristics gain >4.

To simultaneously assess the impact of molecular weight (Mn) and alkyl substituent variations polymers on structural optoelectronic properties, herein, we conduct a systematic study series poly(thienoisoindigo-alt-naphthalene) (PTIIG-Np)-based containing different substituents (2-hexyldecyl (HD), 2-octyldodecyl (OD), 2-decyltetradecyl (DT) chains) Mn's (low (L) high (H)). All produce almost identical energy levels, whereas their optical spectra show clear dependence substituents....