Charge carriers typically move faster in crystalline regions than amorphous conjugated polymers because polymer chains adopt a regular arrangement resulting high degree of π–π stacking regions. In contrast, the random chain orientation hinders connectivity between backbones; thus, it charge carrier delocalization. Various studies have attempted to enhance transport by increasing crystallinity. However, these approaches are inevitably limited semicrystalline nature polymers. Moreover,...

A uniform ultrathin polymer film is deposited over a large area with molecularlevel precision by the simple wire-wound bar-coating method. The bar-coated films not only exhibit high transparency of up to 90% in visible wavelength range but also charge carrier mobility degree percolation through uniformly covered nanofibrils. They are capable realizing highly sensitive multigas sensors and represent first successful report ethylene detection using sensor based on organic field-effect transistors.

High-mobility and low-voltage-operated organic field-effect transistors (OFETs) are demonstrated by the design of a new fluorinated benzothiadiazole-based conjugated polymer with high-k dielectrics. A record-breaking high hole mobility 9.0 cm2 V−1 s−1 for semiconducting polymers is achieved excellent planarity polymer. As service to our authors readers, this journal provides supporting information supplied authors. Such materials peer reviewed may be re-organized online delivery, but not...

In this report, we investigate a formation mechanism for polymer chains aligned with various semiconductor polymers and microstructure directionally film through systematic analysis that includes polarized UV–visible–near infrared (UV–vis–NIR) absorption spectroscopy, atomic force microscopy, charge modulation microscopy (p-CMM), incident X-ray diffraction (GIXD) measurements. Through study, make two important observations: first, the highly organic films are achieved by off-center spin...

The generalized Einstein relation (GER) can unify various theoretical models and predict charge transport in OSCs with crystallinities, by altering the variance of density states delocalization degree a Gaussian-distributed states.

Abstract Here, room‐temperature solution‐processed inorganic p‐type copper iodide (CuI) thin‐film transistors (TFTs) are reported for the first time. The spin‐coated 5 nm thick CuI film has average hole mobility ( µ FE ) of 0.44 cm 2 V −1 s and on/off current ratio × 10 . Furthermore, increases to 1.93 operating voltage significantly reduces from 60 by using a high permittivity ZrO dielectric layer replacing traditional SiO Transparent complementary inverters composed n‐type indium gallium...

Abstract ‘Ideal’ transparent p -type semiconductors are required for the integration of high-performance thin-film transistors (TFTs) and circuits. Although CuI has recently attracted attention owing to its excellent opto-electrical properties, solution processability, low-temperature synthesis, uncontrolled copper vacancy generation subsequent excessive hole doping hinder use as a semiconductor material in TFT devices. In this study, we propose approach through soft chemical process...

Ultrathin and dense metal oxide gate di-electric layers are reported by a simple printing of AlOx HfOx sol-gel precursors. Large-area printed indium gallium zinc (IGZO) thin-film transistor arrays, which exhibit mobilities >5 cm(2) V(-1) s(-1) leakage current 10(-9) A cm(-2) at very low operation voltage 2 V, demonstrated continuous bar-coated processes.

The universal role of high-k fluorinated dielectrics in assisting the carrier transport transistors for a broad range printable semiconductors is explored. These results present general rules how to design dielectric materials and achieve devices with high concentration, low disorder, reliable operation, robust properties. As service our authors readers, this journal provides supporting information supplied by authors. Such are peer reviewed may be re-organized online delivery, but not...

A π-conjugated polyazine containing diketopyrrolopyrrole (DPP) moiety, PDBTAZ, is synthesized through a simple condensation polymerization. PDBTAZ found to be high-performance ambipolar semiconductor in organic thin film transistors (OTFTs), showing an electron mobility of up 0.41 cm(2) V(-1) s(-1) and hole 0.36 s(-1).

Interdependence of chemical structure, thin‐film morphology, and transport properties is a key, yet often elusive aspect characterizing the design development high‐mobility, solution‐processed polymers for large‐area flexible electronics applications. There specific need to achieve >1 cm 2 V −1 s field‐effect mobilities ( μ ) at low processing temperatures in combination with environmental stability, especially case electron‐transporting polymers, which are still lagging behind hole...

A highly conductive, air stable and scalable poly(3,4-ethylenedioxythiophene) (PEDOT): poly(4-styrenesulfonate) (PEDOT:PSS) are prepared by using mass production ultrafiltration. By effectively removing excess PSS various reaction impurities repeated 100 nm pore membrane filtration, purified PEDOT:PSS exhibit conductivity as high 2000 S cm−1. As a service to our authors readers, this journal provides supporting information supplied the authors. Such materials peer reviewed may be...

Abstract A molecular design strategy to achieve highly balanced ambipolar charge transport for donor–acceptor (D–A) isoindigo (IIG)‐based copolymer through systematic selection of fluorination positions is reported. To study fluorine substitution site effects on electronic and structural properties, two fluorinated IIG‐based copolymers (PIIG‐iFT2 PIIG‐oFT2) are synthesized, which contain atoms at the bithiophene (T2) inner outer compare them with a nonfluorinated IIG T2 (PIIG‐T2) as...

Despite extensive progress in organic field‐effect transistors, there are still far fewer reliable, high‐mobility n‐type polymers than p‐type polymers. It is demonstrated that by using dopants at a critical doping molar ratio ( MR ), performance of polymer poly[[ N , 9‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,59‐(2,29‐bithiophene)] (P(NDI2DO‐T2)) transistors (FETs) can be significantly improved and simultaneously optimized mobility, on–off ratio,...

A specific design for solution‐processed doping of active semiconducting materials would be a powerful strategy in order to improve device performance flexible and/or printed electronics. Tetrabutylammonium fluoride and tetrabutylammonium hydroxide contain Lewis base anions, F − OH , respectively, which are considered as organic dopants efficient cost‐effective n‐doping processes both n‐type nanocarbon‐based semiconductors, such poly[[ N...

Control of electron and hole transport in conjugated molecules is a challenging but essential task for deeply understanding the intrinsic charge behaviors as well technological benefits optimizing performance various optoelectronic devices. Here we suggest facile route to controlling ambipolar polymers by precise regulation copolymerization ratio between relatively large donor acceptor building block repeating unit. By varying...

Here, we report on a simple and high-rate oxidization method for producing solution-based compound mixtures of indium zinc oxide (IZO) gallium (IGZO) metal-oxide semiconductors (MOS) thin-film transistor (TFT) applications. One the issues MOS fabrication is how to sufficiently oxidize precursor in order achieve high performance. As oxidation rate solution processing lower than vacuum-based deposition such as sputtering, devices using solution-processed exhibit relatively poorer Therefore,...

Abstract Electret and organic floating-gate memories are next-generation flash storage mediums for printed complementary circuits. While each memory can be easily fabricated using solution processes on flexible plastic substrates, promising their potential on-chip organization is limited by unreliable bit operation high write loads. We here report that new architecture could improve the overall performance of especially meet multi-level operation. Our concept depends synergistic effect...

Abstract Ordering of semiconducting polymers in thin films from the nano to microscale is strongly correlated with charge transport properties as well organic field‐effect transistor performance. This paper reports a method control ordering poly{[ N , ′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)} (P(NDI2OD‐T2)) by precisely regulating solidification rate metastable state just before crystallization. The proposed simple but effective...

Charge transport in carbon nanotube network transistors strongly depends on the properties of gate dielectric that is direct contact with semiconducting nanotubes. In this work, we investigate effects charge polymer-sorted single-walled field-effect (s-SWNT-FETs) by using three different polymer insulators: A low-permittivity (εr) fluoropolymer (CYTOP, εr = 1.8), poly(methyl methacrylate) (PMMA, 3.3), and a high-εr ferroelectric relaxor [P(VDF-TrFE-CTFE), 14.2]. The s-SWNT-FETs dielectrics...

We report on the fabrication of an organic thin-film semiconductor formed using a blend solution soluble ambipolar small molecules and insulating polymer binder that exhibits vertical phase separation uniform film formation. The thin films are produced in single step from mixture containing molecular semiconductor, namely, quinoidal biselenophene (QBS), polymer, poly(2-vinylnaphthalene) (PVN). Organic field-effect transistors (OFETs) based QBS/PVN then assembled top-gate/bottom-contact...

This study investigates the effect of molecular structure three different donor units, naphthalene (Np), bithiophene (BT), and thiophene–vinylene–thiophene (TVT), in isoindigo (IIG)‐based –acceptor conjugated polymers (PIIG‐Np, PIIG‐BT PIIG‐TVT) on charge carrier mobility organic field‐effect transistors (OFETs). The transport properties IIG‐based strongly depend units. PIIG–BT OFETs showed 50 times higher hole (0.63 cm 2 V −1 s ) than PIIG–TVT PIIG–Np ones ≈ 0.01 with CYTOP dielectric...