Myung‐Han Yoon

ORCID: 0000-0001-7205-3054
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Research Areas
  • Conducting polymers and applications
  • Organic Electronics and Photovoltaics
  • Advanced Sensor and Energy Harvesting Materials
  • Advanced Memory and Neural Computing
  • Thin-Film Transistor Technologies
  • ZnO doping and properties
  • Semiconductor materials and devices
  • Neuroscience and Neural Engineering
  • Nanowire Synthesis and Applications
  • Organic Light-Emitting Diodes Research
  • Crystallization and Solubility Studies
  • X-ray Diffraction in Crystallography
  • Perovskite Materials and Applications
  • Gas Sensing Nanomaterials and Sensors
  • Molecular Junctions and Nanostructures
  • Electrospun Nanofibers in Biomedical Applications
  • Analytical Chemistry and Sensors
  • 3D Printing in Biomedical Research
  • Supercapacitor Materials and Fabrication
  • Nanopore and Nanochannel Transport Studies
  • Advanced Photocatalysis Techniques
  • Hydrogels: synthesis, properties, applications
  • Membrane Separation Technologies
  • Graphene and Nanomaterials Applications
  • Semiconductor materials and interfaces

Gwangju Institute of Science and Technology
2016-2025

Inha University
2024

Ajou University
2023

Gwangju University
2014-2021

Government of the Republic of Korea
2015-2021

Institut of Research in Solar Energy and New Energies
2015

Dongguk University
2015

Harvard University
2010-2012

Northwestern University
2003-2007

University of Illinois Urbana-Champaign
2005

Abstract In this contribution we review the motivations for, and recent advances in, new gate dielectric materials for incorporation into organic thin‐film transistors (OTFTs) electronics. After a general introduction to OTFT materials, operating principles, processing requirements optimizing low‐cost electronics, focuses on three classes of OTFT‐compatible dielectrics: i) inorganic (high‐ k ) materials; ii) polymeric iii) self‐assembled mono‐ and/multilayer materials. The principal goals in...

10.1002/adma.200500517 article EN Advanced Materials 2005-07-08

Taking up the semiconducting baton: Organic field-effect transistors fabricated with a new class of extremely electron-deficient cyanated perylene diimides are air-stable and exhibit n-type mobilities as high 0.64 cm2 V−1 s−1 (see scheme). Devices can be from vapor-deposited solution-cast films well top- bottom-contact electrode configurations. Supporting information for this article is available on WWW under http://www.wiley-vch.de/contents/jc_2002/2004/z461324_s.pdf or author. Please note:...

10.1002/anie.200461324 article EN Angewandte Chemie International Edition 2004-11-23

A generalized platform for introducing a diverse range of biomolecules into living cells in high-throughput could transform how complex cellular processes are probed and analyzed. Here, we demonstrate spatially localized, efficient, universal delivery immortalized primary mammalian using surface-modified vertical silicon nanowires. The method relies on the ability nanowires to penetrate cell’s membrane subsequently release surface-bound molecules directly cytosol, thus allowing highly...

10.1073/pnas.0909350107 article EN Proceedings of the National Academy of Sciences 2010-01-11

This study describes a general approach for probing semiconductor-dielectric interfacial chemistry effects on organic field-effect transistor performance parameters using bilayer gate dielectrics. Organic semiconductors exhibiting p-/n-type or ambipolar majority charge transport are grown six different dielectric structures consisting of various spin-coated polymers/HMDS 300 nm SiO(2)/p(+)-Si, and characterized by AFM, SEM, WAXRD, followed electrical characterization. In the case...

10.1021/ja063290d article EN Journal of the American Chemical Society 2006-09-09

A new family of perfluoroarene-modified thiophene semiconductors 1–3 has been synthesized to assess the influence perfluoroarene introduction and regiochemistry on molecular thin-film transistor properties. Compound 1 is an n-type semiconductor with a mobility approaching 0.1 cm2 V−1 s−1 whereas 2 3 exhibit p-type behavior. These results show that origin carrier not solely consequence solution/film LUMO HOMO energies. Supporting information for this article available WWW under...

10.1002/anie.200351253 article EN Angewandte Chemie International Edition 2003-08-22

The quest for high-performance organic thin-film transistor (OTFT) gate dielectrics is of intense current interest. Beyond having excellent insulating properties, such materials must meet other stringent requirements optimum OTFT function: efficient low-temperature solution fabrication, mechanical flexibility, and compatibility with diverse semiconductors. OTFTs should function at low biases to minimize power consumption, hence the dielectric exhibit large capacitance. We report realization...

10.1021/ja052488f article EN Journal of the American Chemical Society 2005-06-30

The synthesis, comparative physicochemical properties, and solid-state structures of five oligothiophene (nT) series differing in substituent nature attachment, regiochemistry, core length (n) are described. These include the following 25 compounds: (i) alpha,omega-diperfluorohexyl-nTs 1 (DFH-nTs, n = 2-6), (ii) beta,beta'-diperfluorohexyl-nTs 2 (isoDFH-nTs, (iii) alpha,omega-dihexyl-nTs 3 (DH-nTs, (iv) beta,beta'-dihexyl-nTs 4 (isoDH-nTs, (v) unsubstituted oligothiophenes 5 (alphanTs, 2-6)....

10.1021/ja048988a article EN Journal of the American Chemical Society 2004-09-14

Owing to the mixed electron/hole and ion transport in aqueous environment, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)-based organic electrochemical transistor has been regarded as one of most promising device platforms for bioelectronics. Nonetheless, there exist very few in-depth studies on how intrinsic channel material properties affect their performance long-term stability environments. Herein, we investigated correlation among film microstructural crystallinity/composition,...

10.1038/s41467-018-06084-6 article EN cc-by Nature Communications 2018-09-17

Despite intensive research on photochemical activation of sol–gel metal oxide materials, the relatively long processing time and lack deep understanding underlying chemical courses have limited their broader impact diverse materials applications such as thin‐film electronics, photovoltaics, catalysts. Here, in‐depth studies rapid films using various spectroscopic electrical investigations for physicochemical mechanism are reported. Based exhaustive physical analysis, it is noted that...

10.1002/adfm.201500545 article EN Advanced Functional Materials 2015-03-30

Abstract Despite the growing attention on organic electrochemical transistors (OECTs), most research has focused design of p‐type active materials, and number high‐performance n‐type materials is limited. Herein, a series naphthalene diimide‐based polymers incorporated with asymmetrically branched oligo(ethylene glycol) (OEG) side chains are developed to enable green‐solvent‐processed, OECTs. The OEG afford sufficient solubility in eco‐friendly ethanol/water solvent mixtures. Importantly,...

10.1002/adfm.202111950 article EN Advanced Functional Materials 2022-01-04

The solid-state properties and FET electrical behavior of several series α,ω- β,β'-fluorocarbon- alkyl-substituted unsubstituted oligothiophenes nTs (n = 2−6) are compared contrasted. thin films were grown by slow vacuum deposition over a range substrate temperatures and/or casting from solution investigated X-ray diffraction scanning electron microscopy. Our results indicate that at 60−80 °C affords with remarkably similar microstructures despite the extensive H → F substitution. Trends in...

10.1021/ja0489846 article EN Journal of the American Chemical Society 2004-09-22

New carbonyl-functionalized quaterthiophenes, 5, 5' ''-diheptanoyl-2,2':5',2' ':5' ',2' ''-quaterthiophene (DHCO-4T), ''-diperfluorohexylcarbonyl-2,2':5',2' (DFHCO-4T), and 2,7-[bis-(5-perfluorohexylcarbonylthien-2-yl)]-4H-cyclopenta[2,1-b:3,4-b']-dithiophen-4-one (DFHCO-4TCO) have been synthesized characterized. Field-effect transistors fabricated with these materials exhibit high electron mobilities both in a vacuum (up to 0.6 cm2 V-1 s-1) air 0.02 very Ion:Ioff currents ratios (>107)....

10.1021/ja045124g article EN Journal of the American Chemical Society 2005-01-15

We present here the systematic synthesis and comparative physicochemical characterization of a series regiochemically varied core size extension-modulated arene(perfluoroarene)-thiophene oligomers. The molecules investigated are: 5,5''-diphenyl-2,2':5',2'':5'',2'''-quaterthiophene (1), 5,5'-bis[1-[4-(thien-2-yl)phenyl]]-2,2'-dithiophene (2), 4,4'-bis[5-(2,2'-dithiophenyl)]-biphenyl (3), 5,5''-diperfluorophenyl-2,2':5',2'':5'',2'''-quaterthiophene (4),...

10.1021/ja060016a article EN Journal of the American Chemical Society 2006-04-07

Very thin (2.3-5.5 nm) self-assembled organic dielectric multilayers have been integrated into thin-film transistor structures to achieve sub-1-V operating characteristics. These new dielectrics are fabricated by means of layer-by-layer solution phase deposition molecular silicon precursors, resulting in smooth, nanostructurally well defined, strongly adherent, thermally stable, virtually pinhole-free, organosiloxane films having exceptionally large electrical capacitances (up ≈2,500 nF·cm...

10.1073/pnas.0501027102 article EN Proceedings of the National Academy of Sciences 2005-03-21

In the present study, a novel polar-solvent vapor annealing (PSVA) was used to induce significant structural rearrangement in poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) films order improve their electrical conductivity and work function. The effects of on PEDOT:PSS were systematically compared with those conventional solvent additive method (SAM) investigated detail by analyzing changes conductivity, morphology, top bottom surface composition, conformational PEDOT...

10.1021/am300231v article EN ACS Applied Materials & Interfaces 2012-04-10

Ultrathin and dense metal oxide gate di-electric layers are reported by a simple printing of AlOx HfOx sol-gel precursors. Large-area printed indium gallium zinc (IGZO) thin-film transistor arrays, which exhibit mobilities >5 cm(2) V(-1) s(-1) leakage current 10(-9) A cm(-2) at very low operation voltage 2 V, demonstrated continuous bar-coated processes.

10.1002/adma.201502239 article EN Advanced Materials 2015-07-26

Despite the great potential of polymer microfibers in human-friendly wearable electronics, most previous polymeric electronics have been limited to thin-film-based devices due practical difficulties fabricating microfibrillar devices, as well defining active channel dimensions a reproducible manner. Herein, we report on conducting microfiber-based organic electrochemical transistors (OECTs) and their application single-strand fiber-type ion concentration sensors. We developed simple...

10.1038/s41427-018-0097-3 article EN cc-by NPG Asia Materials 2018-11-01

Abstract To realize thermoelectric textiles that can convert body heat to electricity, fibers with excellent mechanical and properties are needed. Although poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is among the most promising organic materials, reports explore its use for all but absent. Herein, of wet‐spun PEDOT:PSS reported, their in energy‐harvesting discussed. Wet‐spinning into sulfuric acid results water‐stable semicrystalline a Young's modulus up 1.9 GPa, an...

10.1002/mame.201900749 article EN cc-by Macromolecular Materials and Engineering 2020-02-24
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