The combination of a neuromorphic architecture and photonic computing may open up new era for computational systems owing to the possibility attaining high bandwidths low-computation-power requirements. Here, demonstration devices based on amorphous oxide semiconductors (AOSs) that mimic major synaptic functions, such as short-term memory/long-term memory, spike-timing-dependent plasticity, neural facilitation, is reported. functions are successfully emulated using inherent persistent...

Despite intensive research on photochemical activation of sol–gel metal oxide materials, the relatively long processing time and lack deep understanding underlying chemical courses have limited their broader impact diverse materials applications such as thin‐film electronics, photovoltaics, catalysts. Here, in‐depth studies rapid films using various spectroscopic electrical investigations for physicochemical mechanism are reported. Based exhaustive physical analysis, it is noted that...

Incorporation of Zr into an AlOx matrix generates intrinsically activated ZAO surface enabling the formation a stable semiconducting IGZO film and good interfacial properties. Photochemically annealed metal–oxide devices circuits with optimized sol-gel dielectric semiconductor layers demonstrate high performance electrically/mechanically operation flexible electronics fabricated via low-temperature solution process.

Ultrasensitive room-temperature operable gas sensors utilizing the photocatalytic activity of Na-doped p-type ZnO (Na:ZnO) nanoflowers (NFs) are demonstrated as a promising candidate for diabetes detection. The flowerlike Na:ZnO nanoparticles possessing ultrathin hierarchical nanosheets were synthesized by facile solution route at low processing temperature 40 °C. It was found that Na element acting dopant successfully incorporated in lattice. On basis NFs, chemiresistive-type realized,...

Stretchable sensors have been widely investigated and developed for the purpose of human motion detection, touch sensors, healthcare monitoring, typically converting mechanical/structural deformation into electrical signals. The viscoelastic strain stretchable materials often results in nonlinear stress–strain characteristics over a broad range strains, consequently making at body joints less accurate predicting recognizing gestures. Accurate recognition gestures can be further deteriorated...

Combining biomolecular function with integrated circuit technology could usher in a new era of biologically enabled electronics. A key challenge has been coupling different molecular functions to specific chip locations for communication the circuit. We used spatially confined electric fields assemble populations DNA-coated nanowires desired positions an accuracy that postassembly fabrication contacts each individual nanowire, high yield and without loss DNA function. This combination...

An ultra-thin and large-area skin-compatible heterogeneous organic/metal-oxide photosensor array is demonstrated which capable of sensing boosting signals with high detectivity signal-to-noise ratio. For the realization ultra-flexible high-sensitive arrays on a polyimide substrate having organic sensor metal-oxide circuitry, solution-processing room-temperature alternating photochemical conversion routes are applied. As service to our authors readers, this journal provides supporting...

We discuss the influence of V-pits and their energy barrier, originating from its facets (101¯1) planes, on luminescence efficiency InGaN LEDs. Experimental analysis using cathodoluminescence (CL) exhibits that thin quantum wells (QWs) appear to be effective in improving emission intensity, preventing injected carriers recombining non-radiatively with threading dislocations (TDs). Our theoretical calculation based self-consistent approach adopting k⋅p method reveals higher V-pit barrier...

The low-temperature electrical passivation of an amorphous oxide semiconductor (AOS) thin-film transistor (TFT) is achieved by a deep ultraviolet (DUV) light irradiation-water treatment-DUV irradiation (DWD) method. water treatment the first DUV-annealed indium-gallium-zinc-oxide (a-IGZO) thin film likely to induce preferred adsorption molecules at oxygen vacancies and leads subsequent hydroxide formation in bulk a-IGZO films. Although initially degraded performance TFTs, second DUV on...

The electrical transport and chemical sensing properties of individual multisegmented Au-poly(3,4-ethylenedioxythiophene)(PEDOT)-Au nanowires have been investigated. Temperature dependent conductivity measurements show that different charge mechanisms influence these in two types PEDOT nanowires. Charge PEDOT/poly(4-styrenesulfonic acid) (PSS) is the insulating regime metal-insulator transition dominated by hopping, while PEDOT/perchlorate (CIO4) are slightly on metallic side critical...

We report the effect of V-shaped pit size, inverted hexagonal pits embedded in InGaN multiple quantum well, on reverse leakage current light-emitting diodes (LEDs). It was found that LEDs with larger is significantly reduced from 1.80 mA down to 3.84 nA at -30 V by several orders magnitude. claim this improvement accounted for increased Poole-Frenkel barrier height carrier trapped deep centers via enlarged V-pit formation, consequently resulting lower LEDs.

We report a general strategy for obtaining high-quality, large-area metal-chalcogenide semiconductor films from precursors combining chelated metal salts with chalcoureas or chalcoamides. Using conventional organic solvents, such enable the expeditious formation of chalco-gels, which are easily transformed into corresponding high-performance thin large, uniform areas. Diverse chalcogenides and their alloys (MQ x : M = Zn, Cd, In, Sb, Pb; Q S, Se, Te) successfully synthesized at relatively...

Solution-processed indium gallium tin oxide (InGaSnO, IGTO) thin film transistors (TFTs) are investigated as promising low-cost and stable materials for high-performance amorphous semiconductor (AOS)-based TFTs in display applications. After tailoring the metal cation composition IGTO films, (7:1:1) AOS TFT shows a saturation mobility current on/off ratio of 2.13 cm2 V–1 s–1 2.55 × 107, superior to IGZO TFT. It was found that threshold voltage (Vth) shifts with higher Sn molar ratios became...

Indium tin zinc oxide (ITZO) thin-film transistors (TFTs) with different channel structures are investigated. The electrical performance and bias stress stability of bilayer-channel ITZO TFTs enhanced in comparison those single-channel TFTs. bilayer consists an oxygen-uncompensated layer oxygen-compensated capping layer, while the single is layer. properties films fine-tuned by adjusting their oxygen stoichiometry using X-ray photoelectron spectroscopy measurements reveal that shows...

In this work, the fabrication and characterization of high performance indium-tin-zinc-oxide (ITZO) thin-film transistors (TFTs) with hexamethyldisilazane (HMDS) passivation are presented. The incorporation HMDS significantly enhances electrical bias stress stability ITZO TFTs compared those without passivation. X-ray photoelectron spectroscopy measurements reveal that offer distinct advantages over passivation, including an increased concentration metal oxide a reduced oxygen vacancies...

The branched network-driven ion solvating quasi-solid polymer electrolytes (QSPEs) are prepared via one-step photochemical reaction. A poly(ethylene glycol diacrylate) (PEGDA) is combined with an ion-conducting solvate ionic liquid (SIL), where tetraglyme (TEGDME), which acts like interneuron in the human brain and creates branching network points, mixed EMIM-NTf

Thiocyanate (SCN)-treated lead sulfide (PbS) quantum dot thin-film-transistors (QD TFTs) and CMOS-compatible circuits were fabricated on a flexible substrate via scalable photolithography process. Spectroscopic electrical investigations demonstrated that the thermal treatments induce ligand decomposition densification of QD arrays at around 170 °C. High temperature annealing above 200 °C induces an aggregation particles, resulting in degradation device performance, such as field-effect...

To achieve both high structural integrity and excellent ion transport, designing gel polymer electrolytes (IGPEs) composed of an ionic conducting phase a mechanical supporting matrix is one the promising material strategies for development next-generation all-solid-state energy storage systems. Herein, we prepared IGPE thin film, in which ion-diffusing containing liquids lithium salts was bicontinuously intertwined with cross-linked epoxy phase, using silicon elastomer-based stamping method,...

Abstract New ionic‐gel polymer electrolytes (IGPEs) are designed for use as all‐solid‐state supercapacitors (ASSSs) with excellent deformability and stability. The combination of the photochemical reaction‐based matrix, weak‐binding lithium salt ionic liquid, ion dissociating solvator is employed to construct nano‐canyon structured IGPE high conductivity (σ DC = 1.2 mS cm −1 at 25 ° C), dielectric constant (ε s 131), even mechanical robustness (bending deformation 10 000 cycles superior...

A highly sensitive and flexible gas sensor that can detect a wide range of chemicals is crucial for wearable applications. However, conventional single resistance-based sensors face challenges in maintaining chemical sensitivity under mechanical stress be affected by interfering gases. This study presents versatile approach fabricating micropyramidal ion gel sensor, which accomplishes sub-ppm (<80 ppb) at room temperature discrimination capability between various analytes, including toluene,...

Abstract Strongly bound excitons are a characteristic hallmark of 2D semiconductors, enabling unique light–matter interactions and novel optical applications. Platinum diselenide (PtSe 2 ) is an emerging material with outstanding electrical properties excellent air stability. Bulk PtSe semimetal, but its atomically thin form shows semiconducting phase the appearance band‐gap, making one expect strongly excitons. However, in have been barely studied, either experimentally or theoretically....