A5100771041- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Optical Network Technologies
- Thin-Film Transistor Technologies
- Nanowire Synthesis and Applications
- Advanced Photonic Communication Systems
- Semiconductor materials and devices
- ZnO doping and properties
- Advanced Sensor and Energy Harvesting Materials
- Photonic and Optical Devices
Hanyang University
2022-2024
In this work, the fabrication and characterization of high performance indium-tin-zinc-oxide (ITZO) thin-film transistors (TFTs) with hexamethyldisilazane (HMDS) passivation are presented. The incorporation HMDS significantly enhances electrical bias stress stability ITZO TFTs compared those without passivation. X-ray photoelectron spectroscopy measurements reveal that offer distinct advantages over passivation, including an increased concentration metal oxide a reduced oxygen vacancies...
We demonstrate the programmable light intensity of a micro-LED by compensating threshold voltage variability thin-film transistors (TFTs) introducing non-volatile ferroelectric material, HfZrO
We successfully demonstrated a 2T0C-FeDRAM with record-long multibit retention time exceeding 2000 seconds and 4-bit (19 states) capability, attributed to V SN of 0 leveraging the non-volatile properties ferroelectrics.
We propose the carrier-depletion type strained SiGe optical lumped Mach-Zehnder modulators (MZMs) with L-shape PN junction (LSPN) a highly CMOS-compatible fabrication method. The device performance is numerically investigated and optimized by technology computer-aided design (TCAD) simulation. LSPN MZ modulator exhibits high modulation efficiency of 0.52 Vcm for <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math...