A5100772344- Organic Electronics and Photovoltaics
- Advanced Memory and Neural Computing
- Semiconductor materials and devices
- Conducting polymers and applications
- Thin-Film Transistor Technologies
- Molecular Junctions and Nanostructures
- Advancements in Semiconductor Devices and Circuit Design
- Crustacean biology and ecology
- Drug Solubulity and Delivery Systems
- Graphene research and applications
- Organic Light-Emitting Diodes Research
- Advanced Sensor and Energy Harvesting Materials
- ZnO doping and properties
- Gas Sensing Nanomaterials and Sensors
- Nanowire Synthesis and Applications
- Semiconductor materials and interfaces
- Low-power high-performance VLSI design
- Advanced Drug Delivery Systems
- Catalysts for Methane Reforming
- Education, Safety, and Science Studies
- Advancements in PLL and VCO Technologies
- Education and Learning Interventions
- Neuroscience and Neural Engineering
- Electrocatalysts for Energy Conversion
- Analytical Chemistry and Sensors
University of Ottawa
2024-2025
Chonnam National University Hwasun Hospital
2025
Korea Institute of Industrial Technology
2019-2024
Kyungpook National University
2024
Korea Advanced Institute of Science and Technology
1998-2023
Gachon University
2018-2023
Chung-Ang University
2013-2023
Wonkwang University
2023
University of North Texas
2023
University of North Texas Health Science Center
2023
Owing to the mixed electron/hole and ion transport in aqueous environment, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)-based organic electrochemical transistor has been regarded as one of most promising device platforms for bioelectronics. Nonetheless, there exist very few in-depth studies on how intrinsic channel material properties affect their performance long-term stability environments. Herein, we investigated correlation among film microstructural crystallinity/composition,...
Ion gels composed of a copolymer and room temperature ionic liquid are versatile solid-state electrolytes with excellent features including high conductivity, nonvolatility, easily tunable mechanical properties, good flexibility solution processability. can be functionalized by incorporating redox-active species such as electrochemiluminescent (ECL) luminophores or electrochromic (EC) dyes. Here, we enhance the functionality EC for realizing multicolored devices (ECDs), either controlling...
Graphene micro‐supercapacitors (MSCs) are an attractive energy storage technology for powering miniaturized portable electronics. Despite considerable advances in recent years, device fabrication typically requires conventional microfabrication techniques, limiting the translation to cost‐effective and high‐throughput production. To address this issue, we report here a self‐aligned printing process utilizing capillary action of liquid inks microfluidic channels realize scalable,...
A 512 Mb diode-switch PRAM has been developed in a 90 nm CMOS technology. The vertical using the SEG technology achieved minimum cell size and disturbance-free core operation. configuration, read/write circuit techniques, charge-pump system for are proposed. read throughput of 266 MB/s through proposed schemes. write was 0.54 internal x2 mode, increased to 4.64 with x16 accelerated mode at 1.8 V supply.
The vertical integration of graphene with inorganic semiconductors, oxide and newly emerging layered materials has recently been demonstrated as a promising route toward novel electronic optoelectronic devices. Here, we report organic thin film transistors based on heterojunctions semiconductors. In these heterostructure devices, current modulation is accomplished by tuning the injection barriers at semiconductor/graphene interface application gate voltage. N-channel devices fabricated layer...
In spite of impressive improvements achieved for organic field-effect transistors (OFETs), there is still a lack theoretical understanding their behaviors. Furthermore, it challenging to develop universal model that would cover huge variety materials and device structures available state-of-the-art OFETs. Nonetheless, currently strong need specific OFET compact models when device-to-system integration an important issue. We briefly describe the most fundamental characters semiconductors...
Both organic semiconductors and graphene now represent an established field of research with great technological potential. Recently, impressive progress has been made in our understanding how to synergistically exploit their basic properties as unique functions practical applications. It is therefore time regard hybrid electronics from a distinct subject that may open up many new possibilities. This article reviews fundamental aspects recent advances emerging devices, projects perspectives...
Multi-valued logic (MVL) circuits based on heterojunction transistor (HTR) have emerged as an effective strategy for high-density information processing without increasing the circuit complexity. Herein, organic ternary inverter (T-inverter) is demonstrated, where a nonvolatile floating-gate flash memory employed to control channel conductance systematically, thus realizing stabilized T-inverter operation. The 3-dimensional (3D) fabricated in vertically stacked form all-dry processes, which...
The capacitive behavior of pentacene films was investigated in the metal-semiconductor-metal (MSM) diode structure. Impedance analysis diodes with a thick layer up to 1012 nm showed full depletion organic layer. This observation allowed us regard MSM as parallel-plate capacitor reverse-bias regime without current flow. Under forward-bias, evaluated through frequency-dependent impedance measurements by using an equivalent circuit composed single parallel resistance-capacitance circuit. data...
Here, we propose an advanced compact analytical current-voltage model for organic field-effect transistors (OFETs), which can be incorporated into SPICE-type circuit simulators. We improved the output saturation behavior by introducing a new asymptotic function that also enables more precise low-voltage current and conductance fitting. A expression subthreshold was suggested to cover all operation regimes of OFETs. All parameters were extracted systematic method, comparison modeled with...
We propose a theoretical description of the charge distribution and contact resistance in coplanar organic field-effect transistors (OFETs). Based on concept that current semiconductors is only carried by injected carriers from electrodes, an analytical formulation for inside layer was derived. found OFETs arises sharp low-carrier-density zone at source/channel edge because gate-induced channel carrier density orders magnitude higher than source density. This image totally different...
In this letter, decisive advantages of the staggered-type organic field-effect transistors (OFETs) over coplanar type are elucidated by 2-D device simulation. It is found that charge transport in channel not limited contact electrode staggered OFETs, whereas OFETs show strongly contact-limited behavior. This dissimilarity originates from continuity (staggered) or discontinuity (coplanar) carrier concentration at ends, which directly connected to potential profile. The calculated...
In bottom‐contact organic field‐effect transistors (OFETs), the functionalization of source/drain electrodes leads to a tailored surface chemistry for film growth and controlled interface energetics charge injection. This report describes comprehensive investigation into separating correlating energetic morphological effects self‐assembled monolayers (SAMs) treatment on Au, Ag, Cu electrodes. Fluorinated 5,11‐bis(triethylsilylethynyl) anthradithiophene (diF‐TES‐ADT) pentafluorobenzenethiol...
Germanium–tin (Ge1−xSnx) alloy nanocrystals were synthesized using a gas-phase laser photolysis reaction of tetramethyl germanium and tin. A composition tuning was achieved the partial pressure precursors in closed reactor. For x < 0.1, cubic phase exclusively produced without separation tetragonal Sn metal. In range = 0.1–0.4, unique Ge1−xSnx–Sn alloy–metal hetero-junction synthesized, where metal domain becomes dominant with x. Thin graphitic carbon layers usually sheathed nanocrystals. We...
Significance When various electronic appliances used in everyday life become deformable and transparent, they will provide tremendous versatility the design use of see-through, smart mobile applications, exceeding limitations best developed conventional silicon technologies, which are available only rigid, opaque forms. However, even recently discovered innovative semiconducting components have failed to simultaneously achieve such flexibility transparency. Thus, existing options still...
New materials and device approaches to multi-valued logic systems are introduced.
Abstract Interface issues with organic semiconductors on metal oxide challenge realizing a high‐performance anti‐ambipolar transistor (AAT) stable operation. The motivation behind this research delves into the intricate landscape of AATs, elucidating their envisioned applications and constituent materials. Central to authors, discourse is pivotal role that fluoropolymers assume, acting as bridge uniting n‐type (n‐oxide) p‐type (p‐organic), thereby unveiling hitherto concealed facet...
A 512Mb diode-switch PRAM is developed in a 90nm CMOS technology. core configuration, read/write circuit techniques, and charge-pump system for the are described. Through these schemes, achieves read throughput of 266MB/S maximum write 4.64MB/S with 1.8V supply.
A zinc oxide nanowire (ZnO NW)-embedded Schottky diode was fabricated for UV detection. Two types of devices were prepared. The ZnO NW positioned onto asymmetric metal electrodes (Al and Pt) a device or symmetric Al) an ohmic device, respectively. provided rectifying current flow more sensitive to illumination than the device. barrier plays important role detection by UV-induced reduction effect. fabrication NW-embedded reaction mechanism are discussed in light light-induced
This paper investigates the physics of single-layer organic diodes in low-voltage regime. A simple analytical model is developed to describe current-voltage characteristics device. At variance with what often reported literature, operating mechanism diode closer that p-n junction than conventional Schottky diode. The influence an exponential distribution traps also analyzed. Alongside a drastic reduction current at above-diffusion-potential regime, introduce substantial ideality factor...
Abstract Recently, growing interest in implantable bionics and biochemical sensors spurred the research for developing non-conventional electronics with excellent device characteristics at low operation voltages prolonged stability under physiological conditions. Herein, we report high-performance aqueous electrolyte-gated thin-film transistors using a sol-gel amorphous metal oxide semiconductor electrolyte dielectrics based on small ionic salts. The proper selection of channel material...
In this letter, we report that high-performance insulating films can be generated by judicious control over the microstructure of sol-gel-processed titanium dioxide (TiO2) films, typically known as wide-bandgap semiconductors. The resultant device made 23 nm-thick TiO2 dielectric layer exhibits a low leakage current density ∼1 × 10(-7) A cm(-2) at 2 V and large areal capacitance 560 nF with corresponding constant 27. Finally, low-voltage flexible organic thin-film transistors were...
Abstract Organic neuromorphic devices hold great promise for unconventional signal processing and efficient human-machine interfaces. Herein, we propose novel synaptic organic transistors devised to overcome the traditional trade-off between channel conductance memory performance. A vacuum-processed, nanoscale metallic interlayer provides an ultra-flat surface a high-mobility molecular film as well desirable degree of charge trapping, allowing low-temperature fabrication uniform device...