A5026986287- Thin-Film Transistor Technologies
- Silicon and Solar Cell Technologies
- Silicon Nanostructures and Photoluminescence
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- ZnO doping and properties
- solar cell performance optimization
- Nanowire Synthesis and Applications
- Chalcogenide Semiconductor Thin Films
- Photovoltaic System Optimization Techniques
- Advanced Memory and Neural Computing
- Quantum Dots Synthesis And Properties
- High voltage insulation and dielectric phenomena
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Piezoelectric Materials
- Integrated Circuits and Semiconductor Failure Analysis
- Transition Metal Oxide Nanomaterials
- Gas Sensing Nanomaterials and Sensors
- Organic Electronics and Photovoltaics
- Microgrid Control and Optimization
- Copper-based nanomaterials and applications
- Advanced Surface Polishing Techniques
- Photovoltaic Systems and Sustainability
- Conducting polymers and applications
- Perovskite Materials and Applications
Sungkyunkwan University
2016-2025
Zhejiang University
2025
North University of China
2024
RMIT University
2024
COMSATS University Islamabad
2022-2024
Suwon Research Institute
2015-2019
Government of the Republic of Korea
2016-2018
Namseoul University
2012
Vietnam National University Ho Chi Minh City
2012
Hanoi University of Science and Technology
2012
In this study, the biosorption mechanisms of methylene blue (MB) and Cr(iii) onto pomelo peel collected from our local fruits are investigated by combining experimental analysis with ab initio simulations. Factors that affect adsorption such as pH, time, adsorbent dosage initial adsorbate concentration, fully considered. Five isotherm models-Langmuir, Freundlich, Sips, Temkin, Dubinin-Radushkevich-are employed to estimate capacity adsorption, whereas four kinetic models-pseudo-first-order,...
Abstract A high‐performance transparent p‐NiO/n‐ZnO heterojunction ultraviolet photodetector with a photovoltaic mode that exploits the pyro‐phototronic effect is demonstrated. The influence of thermal treatment on ZnO films systematically investigated, and found to help speed up current flow due redistribution pyroelectric potential within device. pyrocurrent magnitude enhanced by 1264.41% for thermally treated In addition, under weak UV illumination (0.43 mW cm −2 ), device exhibits high...
Abstract We developed and designed a bifacial four-terminal perovskite (PVK)/crystalline silicon (c-Si) heterojunction (HJ) tandem solar cell configuration albedo reflection in which the c-Si HJ bottom sub-cell absorbs spectrum from both front rear sides (reflected light background such as green grass, white sand, red brick, roofing shingle, snow, etc.). Using subsequent short-circuit current density, conversion efficiency of PVK-filtered was improved regardless PVK top properties. This...
leaf extract was characterized for its mitigation of the electrochemical corrosion steel in naturally aerated hydrochloric acid environments by methods and surface analysis. The presence
Stability of negative bias temperature stress (NBTS) nitrogen doped amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) is investigated. Undoped a-IGZO TFT stressed at 333 K exhibit a larger ΔVTH (−3.21 V) with an unpredictable sub-threshold swing (SS) hump shaped transfer curve due to the creation meta-stable traps. Defects related formation has disappeared small (−1.13 and ΔSS (0.018 V/dec) in TFT. It observed that doping enhances device stability by well controlled oxygen vacancy trap...
An amorphous InGaZnO film fabricated by radio frequency magnetron sputtering in only an Ar-reactive gas shows high conductivity, and a thin-film transistors (TFTs)-based IGZO active layer expresses poor on/off current ratio with off subthreshold swing (SS). This paper presents the post-annealing effects on thin films to compensate oxygen deficiencies as well TFT devices reduce densities of interface trap between insulator. The vacancies over total (O2/Otot) estimated XPS measurement that...
A visible transparent pyro–phototronic photodetector, which provides remarkable enhancements in the photo-induced current (121%), responsivity and detectivity (750%) ultrahigh response speed of 4 μs under 365 nm at mW cm<sup>−2</sup>.
A zinc oxide nanowire (ZnO NW)-embedded Schottky diode was fabricated for UV detection. Two types of devices were prepared. The ZnO NW positioned onto asymmetric metal electrodes (Al and Pt) a device or symmetric Al) an ohmic device, respectively. provided rectifying current flow more sensitive to illumination than the device. barrier plays important role detection by UV-induced reduction effect. fabrication NW-embedded reaction mechanism are discussed in light light-induced