A5035760281- Silicon and Solar Cell Technologies
- Silicon Nanostructures and Photoluminescence
- Thin-Film Transistor Technologies
- Nanowire Synthesis and Applications
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- solar cell performance optimization
- Photovoltaic System Optimization Techniques
- Photovoltaic Systems and Sustainability
- Chalcogenide Semiconductor Thin Films
- Advancements in Semiconductor Devices and Circuit Design
- Quantum Dots Synthesis And Properties
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Semiconductor Quantum Structures and Devices
- Solar Radiation and Photovoltaics
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- ZnO doping and properties
- Copper-based nanomaterials and applications
- Near-Field Optical Microscopy
- Transition Metal Oxide Nanomaterials
- Silicon Effects in Agriculture
- Advanced Surface Polishing Techniques
- Electronic and Structural Properties of Oxides
Sungkyunkwan University
2018-2025
COMSATS University Islamabad
2022
Hanyang University
2016
Hyundai Heavy Industries (South Korea)
2008-2015
ARC Centre of Excellence in Advanced Molecular Imaging
2004-2011
UNSW Sydney
2002-2011
Korea Institute of Materials Science
2008
Samsung (South Korea)
2006
Silicon (Si) quantum dot (QD) materials have been proposed for 'all-silicon' tandem solar cells. In this study, cells consisting of phosphorus-doped Si QDs in a SiO2 matrix deposited on p-type crystalline substrates (c-Si) were fabricated. The formed by alternate deposition and silicon-rich SiOx with magnetron co-sputtering, followed high-temperature annealing. Current tunnelling through the QD layer was observed from spacing 2 nm or less. To get required current densities devices, had to be...
We report work progress on the growth of Si quantum dots in different matrices for future photovoltaic applications. The reported here seeks to engineer a wide-bandgap silicon-based thin-film material by using confinement silicon and utilize this complete tandem cell, without constraints lattice matching, but which nonetheless gives an enhanced efficiency through increased spectral collection efficiency. Coherent-sized dots, dispersed matrix carbide, nitride, or oxide, were fabricated...
Amorphous Si1−xCx/SiC multilayer films were prepared by alternating deposition of Si-rich Si1−xCx and near-stoichiometric SiC layers using magnetron sputtering. The as-deposited annealed at different temperatures (Ta) from 800 to 1100 °C. influence Ta Si content in the layer on layered structural stability formation and/or nanocrystals (NCs) is investigated a variety analytical techniques, including x-ray reflectivity (XRR), diffraction (XRD), transmission electron microscopy (TEM), Raman...
Doping of Si nanocrystals is an important topic in the emerging field based all-Si tandem solar cells. Boron-doped embedded a silicon dioxide matrix were realized by co-sputtering process, followed high temperature annealing. The x-ray photoelectron spectroscopy B 1s signal attributable to Si-B (187 eV) and/or B-B (188 indicates that boron may exist inside nanocrystals. A higher probability effective doping was suggested for Si-rich oxide films with low oxygen content, Then, structural and...
Twenty-three percent of carbon emissions come from fossil fuels used in transportation. Electric vehicles are suggested as alternatives to fossil-fueled vehicles. Cars having vehicle integrated photovoltaics (VIPV) on the roof have recently been launched, aiming increase fuel efficiency and maximum mileage by supplying electricity when needed. VIPV needs be light terms efficiency. The use polymeric materials, made low-iron tempered glass front that contributes significantly module’s weight,...
Heterojunctions (HJs) were fabricated from p-type Si nanocrystals (Si NCs) embedded in a SiC matrix on an n-type crystalline substrate. Transmission electron microscopy revealed that NCs are clearly established, with sizes the range of 3–5nm. The HJ diodes showed good rectification ratio 1.0×104 at ±1.0V 298K. ideality factor, junction built-in potential, and open-circuit voltage ∼1.24, 0.72V, 0.48V, respectively. Measurement temperature-dependent I-V curves forward conduction suggests that,...
Si-rich amorphous silicon carbide thin films were prepared by magnetron cosputtering and subsequently annealed to form Si nanocrystals embedded in a SiC matrix. A sputter target consisted of patterned wafer on top carbon target. The ratio deposited was adjusted means different open area. X-ray photoelectron spectroscopy spectra show that various compositions obtained changing the sputtered area Analysis atomic force microscopy shows surface roughness increases significantly after annealing....