A5042269398- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Semiconductor materials and interfaces
- Integrated Circuits and Semiconductor Failure Analysis
- Nanowire Synthesis and Applications
- solar cell performance optimization
- Photovoltaic System Optimization Techniques
- ZnO doping and properties
- Advanced Surface Polishing Techniques
- Electrical and Thermal Properties of Materials
- Laser Material Processing Techniques
- Chalcogenide Semiconductor Thin Films
- Industrial Vision Systems and Defect Detection
- Semiconductor materials and devices
- Transition Metal Oxide Nanomaterials
- Organic Electronics and Photovoltaics
- CCD and CMOS Imaging Sensors
- Ocular and Laser Science Research
- Boron and Carbon Nanomaterials Research
- Electron and X-Ray Spectroscopy Techniques
- Greenhouse Technology and Climate Control
- Electrowetting and Microfluidic Technologies
- Advanced Sensor and Energy Harvesting Materials
- Molecular Junctions and Nanostructures
Sungkyunkwan University
2012-2022
National University of Singapore
2018-2021
National University Cancer Institute, Singapore
2018-2020
St. Peter's Institute of Higher Education and Research
2019
Government of the Republic of Korea
2016
Silla University
2016
Suwon Research Institute
2016
Abstract We present n ‐type bifacial solar cells with a rear interfacial SiO x / + :poly‐Si passivating contact (‘monoPoly’ cells) where the oxide and layers are fabricated using an industrial inline plasma‐enhanced chemical vapor deposition (PECVD) tool. demonstrate outstanding passivation quality dark saturation current density ( J 0 ) values of approximately 3 fA/cm 2 implied open‐circuit voltage iV oc 730 mV at 1‐sun conditions after firing in belt furnace. Using simple cell process flow...
Stability of negative bias temperature stress (NBTS) nitrogen doped amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) is investigated. Undoped a-IGZO TFT stressed at 333 K exhibit a larger ΔVTH (−3.21 V) with an unpredictable sub-threshold swing (SS) hump shaped transfer curve due to the creation meta-stable traps. Defects related formation has disappeared small (−1.13 and ΔSS (0.018 V/dec) in TFT. It observed that doping enhances device stability by well controlled oxygen vacancy trap...
In this work, small random pyramid texturing (0.5–2 μm size) was generated with chemical nano-masking, to enhance the surface passivation of commercial p-type Cz-Si wafers.
An experiential aspect regarding the improvement of retention characteristics InSnZnO (ITZO) thin-film transistor-based nonvolatile memory (TFT-NVM) devices with a hydrogen peroxide H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O treated Aluminum oxide (Al xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) tunneling layer is reported. A better performance in ~92% (after ten years), smaller subthreshold swing 96 mV/decade, and...
Effect of short-channel induced instabilities in InSnZnO-based thin-film transistors (TFTs) caused by combination the drain barrier lowering (DIBL) and parasitic resistance is reported. As active channel length decreased below a critical value around 8 μm, draincurrent (2.81 μA) are abruptly increased N-shaped behavior transconductance observed due to formation additional current path channel. The magnitude subgap density states also depended on size. higher RSD (~42 kg) DIBL coefficient...
Abstract Double stack antireflection coatings have significant advantages over single-layer due to their broad-range coverage of the solar spectrum. A cell with 60-nm/20-nm SiN X :H double has 17.8% efficiency, while that a 80-nm single coating 17.2% efficiency. The improvement efficiency is effect better passivation and coating. It important films strong resistance against stress factors since they are used as antireflective for cells. However, tolerance external stresses never been...
We have investigated the effect of nitrogen doping on behavior hysteresis curve and its suppression temperature instability in amorphous InGaZnO thin-film transistors (a-IGZO TFTs). The situ reduced induced abnormal sub threshold leakage current traps generation. Large falling-rate (FR) ∼ 0.26 eV V−1, low activation energy (Ea) 0.617 a small compared to pure a-IGZO TFTs, shows best immunity thermal instability. This is mainly attributed reduction interface trap density oxygen vacancies due...
Increasing silicon solar cell efficiency plays a vital role in improving the dominant market share of photo-voltaic systems renewable energy sector. The performance cells can be evaluated by making profound analysis on various effective parameters, such as sheet resistance, doping concentration, thickness cell, arbitrary dopant profile, etc., using software simulation tools, PC1D. In this paper, we present observations obtained from evaluation carried out impact resistance cell’s parameters...
High quality surface passivation has gained a significant importance in photovoltaic industry for reducing the recombination and hence fabricating low cost high efficiency solar cells using thinner wafers. The formation of good-quality SiO2 films SiO2/Si interfaces at processing temperatures is prerequisite improving conversion industrial with better passivation. High-temperature annealing inert ambient promising to improve interface. However, treatments could cause negative effects on due...