Jinsu Park

ORCID: 0000-0001-8604-4714
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About
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Research Areas
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Silicon and Solar Cell Technologies
  • Thin-Film Transistor Technologies
  • Gas Sensing Nanomaterials and Sensors
  • Analytical Chemistry and Sensors
  • Silicon Nanostructures and Photoluminescence
  • Ferroelectric and Negative Capacitance Devices
  • Additive Manufacturing and 3D Printing Technologies
  • Digital Marketing and Social Media
  • Advanced Memory and Neural Computing
  • Optical Systems and Laser Technology
  • Innovations in Concrete and Construction Materials
  • Silicon Carbide Semiconductor Technologies
  • Advanced Wireless Communication Techniques
  • Advanced Chemical Sensor Technologies
  • Manufacturing Process and Optimization
  • Technology Adoption and User Behaviour
  • Photovoltaic Systems and Sustainability
  • Ion-surface interactions and analysis
  • Powder Metallurgy Techniques and Materials
  • Injection Molding Process and Properties
  • Teleoperation and Haptic Systems
  • Advanced Sensor Technologies Research
  • Scoliosis diagnosis and treatment

Korea University
2021

Sungkyunkwan University
2019-2020

Korea National University of Transportation
2019-2020

Seoul National University
2015-2019

Pusan National University
2017

Gyeongsang National University
2016

Korea Advanced Institute of Science and Technology
2008-2009

Kyungpook National University
2001

10.1016/j.ijrmhm.2021.105686 article EN publisher-specific-oa International Journal of Refractory Metals and Hard Materials 2021-08-28

The reduction in physical size of the Non-volatile memory (NVM) demands use high-k dielectrics due to loss charge trapping behavior. large bandgap Al2O3 (∼7.0 eV) proves it suitable for blocking and tunneling layer, while high dielectric constant HfO2 layer (CTL). In this paper, we propose application Al doped used as CTL. doping concentration has been varied by varying number sub-cycles (sequential cycles HfO2, Al2O3) ALD system. optical energy observed be increases from 4.91−5.20 eV...

10.1149/2162-8777/abaf10 article EN ECS Journal of Solid State Science and Technology 2020-08-13

The crystallization of hydrogenated amorphous silicon (a-Si:H) is essential for improving solar cell efficiency. In this study, we analyzed the a-Si:H via excimer laser annealing (ELA) and compared process with conventional thermal annealing. ELA prevents damage to substrate while maintaining melting point temperature. Here, used xenon monochloride (XeCl), krypton fluoride (KrF), deep ultra-violet (UV) lasers wavelengths 308, 248, 266 nm, respectively. Laser energy densities shot counts were...

10.3390/en13133335 article EN cc-by Energies 2020-06-30

This paper investigates the channel estimation schemes for tracking rapid time variant channels in IEEE 802. 11p systems. To overcome problems of existing preamble based estimation, various data-pilot aided (DPA) algorithms have been developed. However, their performance is not sufficient to meet advanced V2X use cases. In this paper, we propose a novel two step scheme which outperforms conventional DPA designs. For first step, develop an enhanced time-domain reliability test and frequency...

10.1109/vtc2020-spring48590.2020.9128435 article EN 2020-05-01

Osteoconductive, biocompatible, and resorbable organic/inorganic composites are most commonly used in fixation medical devices, such as suture anchors interference screws, because of their unique physical chemical properties. Generally, studies on biodegradable have focused mechanical properties based the composition individual roles organic inorganic biomaterials. In this study, we prepared nanocomposite materials using solvent mixing process conventional molding. We polylactic acid (PLA)...

10.1166/jnn.2018.14884 article EN Journal of Nanoscience and Nanotechnology 2017-09-29

This paper confirms that the electrical characteristics of FinFETs such as on/off ratio, drain-induced barrier lowering (DIBL), and sub-threshold slope (SS) can be improved by optimizing FinFET spacer structure. An operating voltage maintain a life 10 years or more when hot-carrier injection is extracted. excellent ratio (7.73×107) best SS value were found at 64.29 mV/dec with length 90 nm. Under hot carrier-injection conditions, supply voltages meet 10-year lifetime condition are 1.11 V,...

10.3390/electronics9081283 article EN Electronics 2020-08-11

In this work, the charge retention properties of thermal ALD-Al2O3 trapping layer with metal-oxide-oxide-oxide-silicon (MOOOS) gate stack have been investigated for non-volatile memory application. The precursor gas concentrations were changed to engineer band gap AlxOy and effect post-deposition annealing on was studied. Al2O3 trimethyl aluminum (TMA): H2O flow ratio 1:1 deposition pulse time 1 s per each cycle showed 4.49 eV , which is suitable layer. MOOOS device by performing...

10.1149/2162-8777/ab8b73 article EN ECS Journal of Solid State Science and Technology 2020-04-21

In this study we used luxury haul videos (LHVs) on YouTube to explore how creators' nonverbal communication cues encourage viewers subscribe certain channels and purchase the goods introduced in videos. Participants were 337 Korean women who completed a survey which they rated of creators. The results demonstrate that kinesics paralanguage important factors affecting viewers' perception content attributes. Creators' physical appearance was found be relatively less important. We also...

10.2224/sbp.10119 article EN Social Behavior and Personality An International Journal 2021-06-01

Metal additive manufacturing (AM) technologies are classified into two groups according to the consolidation mechanisms and densification degrees of as-built parts. Densified parts obtained via a single-step process such as powder bed fusion, directed energy deposition, sheet lamination AM technologies. Conversely, green bodies consolidated with aid binder phases in multi-step processes jetting material extrusion AM. Green-body part shapes sustained by phases, which removed for debinding...

10.4150/kpmi.2020.27.3.256 article EN Journal of Korean Powder Metallurgy Institute 2020-06-30

This paper presents a distortion compensation algorithm for cable-driven master devices. Such device has four string pots at corners of frame. Four cables are tied from the to center holder. When central holder, which is haptic grip, moves, lengths will change. From cable lengths, spatial position grip can be estimated using triangulation. In this case, such as barrel image field occurs when estimating with an offset parallel plane in located. The closer corner, smaller estimate value than...

10.7736/jkspe.022.086 article EN Journal of the Korean Society for Precision Engineering 2023-01-01

It is generally difficult to estimate rapid time-frequency variant channels in IEEE802.11p systems due insufficient number of pilots a data packet. To resolve such problem, advanced channel estimation schemes have been developed literature. However, their performance has mostly proven through computer simulations, which for reflecting the actual road environments. In this paper, we introduce result our field trials based on software defined radio testbed evaluate four celebrated schemes,...

10.1109/vnc48660.2019.9062808 article EN 2019-12-01

본 연구에서는 경상남도 의령군 지역의 소하천 162개소를 대상으로 산간 및 농경지 지역에 위치하고 있는 소하천에 대해 수문지형학적 특성인자 중에서 하폭을 결정하는데 중요한 역할을 하는 계획홍수량(Q), 유역면적(A), 유로연장(L), 하상경사(I) 등의 자료를 수집하고 소하천의 특성과 당 적합한 계획하폭을 산정하고 그 결과를 기존의 계획하폭 산정공식과 비교 검토하였다. 결과 소하천결정공식에 의해 산정된 하폭이 더 크게 결정되는 얻을 수 있었다. 이는 결정시 하폭확장에 어려움이 있어 제방을 높게 축제하거나 다른 방안을 통해 방재성능을 확보하는 등 다양한 정비계획이 고려되기 때문으로 판단된다. 이러한 결과는 향후 정비의 방향을 설정하는 데 기초자료가 될 것이다. The purpose of the current study is to determine design channel width for small basins in agricultural and mountaineous...

10.9798/kosham.2016.16.4.269 article EN Korean Society of Hazard Mitigation 2016-08-31

Ultra-thin MoO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> is capable of exhibiting high work function (<; 6 eV), large band gaps 3 eV) are benefiting for surface passivation and hole selectivity layer in silicon solar cells instead the doped layers due to parasitic absorption. Importantly, electronic structure by oxygen dilution during evaporation have influence hence reduce injection. XPS study confirmed chemical composition...

10.23919/am-fpd.2019.8830558 article EN 2019-07-01
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