A5043266249- ZnO doping and properties
- Nanowire Synthesis and Applications
- Gas Sensing Nanomaterials and Sensors
- Thin-Film Transistor Technologies
- Quantum Dots Synthesis And Properties
- Semiconductor materials and interfaces
- Chalcogenide Semiconductor Thin Films
- Ga2O3 and related materials
- Silicon Nanostructures and Photoluminescence
- Silicon and Solar Cell Technologies
- Perovskite Materials and Applications
- Transition Metal Oxide Nanomaterials
- Advanced Chemical Sensor Technologies
- Nanomaterials and Printing Technologies
- Analytical Chemistry and Sensors
- Copper-based nanomaterials and applications
- Carbon Nanotubes in Composites
- Gold and Silver Nanoparticles Synthesis and Applications
- GaN-based semiconductor devices and materials
- Advanced Sensor and Energy Harvesting Materials
- Thermal Radiation and Cooling Technologies
- Force Microscopy Techniques and Applications
- Advancements in Semiconductor Devices and Circuit Design
- Plasmonic and Surface Plasmon Research
- Conducting polymers and applications
Incheon National University
2015-2024
Government of the Republic of Korea
2019
Incheon Medical Center
2019
University at Buffalo, State University of New York
2010-2015
Korea Institute of Machinery and Materials
2008-2012
New York University
2012
Buffalo State University
2010
Direct coupling of electronic excitations optical energy via plasmon resonances opens the door to improving gain and selectivity in various optoelectronic applications. We report a new device structure working mechanisms for resonance detection electric conversion based on thin film transistor with metal nanostructure incorporated it. This field effect collects plasmonically induced hot electrons from physically isolated nanostructures. These contribute amplification drain current. The...
In this article, room temperature ethanol sensing behavior of p-type Ce doped SnO2 nanostructures are investigated successfully. Interestingly, it is examined that the abnormal n to transition caused by doping in lattice. SnO2, ion substituting Sn favor generating excess holes as oxygen vacancies, which associated with improved performance. Although, one important materials for practical applications, less studied compared n-type SnO2. Pure and were successfully synthesized chemical...
A zinc oxide nanowire (ZnO NW)-embedded Schottky diode was fabricated for UV detection. Two types of devices were prepared. The ZnO NW positioned onto asymmetric metal electrodes (Al and Pt) a device or symmetric Al) an ohmic device, respectively. provided rectifying current flow more sensitive to illumination than the device. barrier plays important role detection by UV-induced reduction effect. fabrication NW-embedded reaction mechanism are discussed in light light-induced
Conventional Cu(In1–x,Gax)Se2 (CIGS) solar cells exhibit poor spectral response due to parasitic light absorption in the window and buffer layers at short wavelength range between 300 520 nm. In this study, CdSe/CdZnS core/shell quantum dots (QDs) acting as a luminescent down-shifting (LDS) layer were inserted MgF2 antireflection coating of CIGS cell improve harvesting range. The LDS absorbs photons re-emits 609 nm range, which are transmitted through absorbed layer. average external...
Could nanostructures act as lenses to focus incident light for efficient utilization of photovoltaics? Is it possible, in order avoid serious recombination loss, realize periodic solar cells without direct etching a absorbing semiconductor? Here we propose and demonstrate promising architecture shape nanolenses on planar semiconductor. Optically transparent electrically conductive simultaneously provide the optical benefit modulating electrical advantage supporting carrier transportation. A...
Here, we report an approach to realize highly transparent low resistance Al-doped ZnO (AZO) films for broadband conductors. Thin Al are deposited on surfaces, followed by thermal diffusion processes, introducing the doping into thin films. By utilizing interdiffusion of Al, Zn, and O, chemical state surfaces can be converted a fully oxidized state, resulting in sheet 6.2 Ω/sq excellent transparency (i.e., 96.5% at 550 nm higher than 85% up 2500 nm), which is superior compared with some...
Abstract Periodical nanocone-arrays were employed in an emitter region for high efficient Si solar cells. Conventional wet-etching process was performed to form the a large area, which spontaneously provides graded doping features selective emitter. This enables lower electrical contact resistance and enhances carrier collection due electric field distribution through nanocone. Optically, convex-shaped nanocones efficiently reduce light-reflection incident light is effectively focused into...