A5100381267- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- PAPR reduction in OFDM
- Advanced MIMO Systems Optimization
- Silicon Carbide Semiconductor Technologies
- Plasma Diagnostics and Applications
- Power Line Communications and Noise
- Advanced Memory and Neural Computing
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced battery technologies research
- Electrocatalysts for Energy Conversion
- Advanced Wireless Communication Techniques
- Full-Duplex Wireless Communications
- Advanced DC-DC Converters
- Advanced Wireless Communication Technologies
- Energy Harvesting in Wireless Networks
- Advanced Battery Technologies Research
- Internet of Things and Social Network Interactions
- Supercapacitor Materials and Fabrication
- Ferroelectric and Negative Capacitance Devices
- Analog and Mixed-Signal Circuit Design
- Innovation in Digital Healthcare Systems
- Microwave Engineering and Waveguides
- Low-power high-performance VLSI design
- Electric Vehicles and Infrastructure
Inha University
2024
Seoul National University
2002-2024
Korea National University of Transportation
2022
Yonsei University
2004-2022
Sookmyung Women's University
2022
Samsung (South Korea)
2007-2021
University of Ulsan
2020
Korea Advanced Institute of Science and Technology
2018
Korea Institute of Science and Technology
2016
Quality and Reliability (Greece)
2016
A 512 Mb diode-switch PRAM has been developed in a 90 nm CMOS technology. The vertical using the SEG technology achieved minimum cell size and disturbance-free core operation. configuration, read/write circuit techniques, charge-pump system for are proposed. read throughput of 266 MB/s through proposed schemes. write was 0.54 internal x2 mode, increased to 4.64 with x16 accelerated mode at 1.8 V supply.
Dynamic time division duplex (D-TDD) dynamically allocates the transmission directions for traffic adaptation in each cell. D-TDD systems are receiving a lot of attention because they can reduce latency and increase spectrum utilization via flexible dynamic operation 5G New Radio (NR). However, advantages system difficult to fully utilize due cross-link interference (CLI) arising from use different between adjacent cells. This paper is survey research academia standardization efforts being...
A 512Mb diode-switch PRAM is developed in a 90nm CMOS technology. core configuration, read/write circuit techniques, and charge-pump system for the are described. Through these schemes, achieves read throughput of 266MB/S maximum write 4.64MB/S with 1.8V supply.
In this paper, fundamental reliability findings in 14nm bulk FinFET technology, are systematically investigated. From device and Ring Oscillator stress to product-level HTOL results, we show that BTI on (110) Fin can be improved significantly with optimized process. addition, variability small Fins does not pose any risk we'll 1000hrs of data 128Mb SRAM. Self-heating effect (SHE) was characterized for both logic I/O devices verified through simulations thermal imaging product design...
We have developed a simple but robust process, plasma enhanced polymer Transfer printing (PEPTP), for fabricating micropatterns of semi-conducting poly(3-hexyl thiophene) (P3HT) thin films. The method is based on transferring P3HT film spin cast directly pre-patterned elastomeric poly(dimethyl siloxane) (PDMS) mold. Printing accomplished by the application oxygen both and substrate surface energy modulation at ambient conditions without additional pressure. control relative interfacial...
In this paper, a physical mechanism for hot carrier injection (HCI) induced trap generation and degradation in bulk FinFETs is investigated verified with both experiment simulation evidence. HCI mainly caused by interface states generated drain avalanche injection. From model, impact ionization intensity, location trapping immunity are proposed as key parameters to modulate degradation. reliability I/O severely degraded respect planar FETs because of the enhanced capability gate control...
As an approach to reduce the computational complexity of Filtered-Orthogonal Frequency Division Multiplexing (F-OFDM), we removed restrictions on filter lengths in F-OFDM and then applied linear pre- post-processing for a transmitter receiver using singular value decomposition (SVD) method order solve data distortion caused by use much shorter than symbol duration. This new has been given designation SVD-based (SF-OFDM). Numerical results show that SF-OFDM lower F-OFDM, especially when...
This letter proposes a new orthogonal frequency division multiplexing (OFDM)-based waveform, called time spread-windowed OFDM (TS-W-OFDM). TS-W-OFDM applies windowing procedure to improve spectral efficiency and spreading method create block signal structure. Numerical results show that has higher nearly same error rate compared the conventional cyclic prefix-OFDM, windowed-OFDM (W-OFDM), weighted overlap add-based (WOLA-OFDM), filtered-OFDM (F-OFDM). In addition, they also lower complexity...
We propose and demonstrate a vertical-cavity surface-emitting laser structure that operates predominantly in the single fundamental transverse mode over wide operation current range. In this structure, microlens is integrated on top of an otherwise ordinary so small portion output fed back into cavity, forcing lasing to occur mode. Model calculations reproduce observed selection effect.
Aging induced variability has been shaving away the design margins in advanced SRAM which may become more serious with highly scaled process node. This paper provides a systematical study of BTI variation impacts FinFET based on 14nm 128Mbit SRAM, including characterization from transistor and cell level to product. For level, despite effective optimization for shifts, Vth mismatch shows non-negligible increase after aging due intrinsic Sqrt(1/WL) trend as time=0 variations. distribution is...
A 256Mb PRAM featuring synchronous burst read operation is developed. Using a charge-pump system, write performance characterized at 1.8V supply. Measured initial access time and burst-read are 62ns 10ns, respectively. The maximum throughput 3.3MB/S
Accessibility is the most important element for creating a successful and robust environmental condition to enhance community vitality health. In era of diversity where all residents need be respected, finding optimal group in providing shared spaces essential satisfying greatest extent. Shared considered here are those general elderly residents. this context, study intended compare space arrangement preferences three different age groups with diverse facilities. Online questionnaire survey...
Both osteoporosis and depression are major health threats, but their interrelationship is not clear. This study elucidated the associations between while considering temporal sequence of diagnoses. In this cross-sectional study, data were extracted from Korean National Health Nutrition Examination Surveys (2007-2009 2015-2019, n = 29,045). Osteoporosis defined by diagnoses thereof. The odds ratio (OR) incident among patients without a history was calculated multivariable logistic regression...
Electrical conductivity (σ) indicates the efficiency of current flow through electronic materials, and varies with both carrier density (n 2D ) mobility ().Studying temperature-dependent σ a material allows for elucidation various transport mechanisms such as metal-insulator phase transition, Coulomb impurity scattering, metal-semiconductor barrier, quantum tunneling features.Herein, we report considerable interlayer resistance (R IT effects on scattering mechanism occurring in multilayer...
Dynamic time division duplex (D-TDD) maximizes resource utilization by dynamically allocating resources to the downlink and uplink according variations in traffic conditions. The new 5th generation (5G) mobile communication standard has reflected D-TDD frame structure. However, D- TDD inherent cross-link interference (CLI) problems. Although many CLI mitigation schemes have been proposed as part of standardization 5G system, none these solved multifaceted problem. In this paper, we analyze...
Display Driver IC is used to operate the display panel of mobile devices, such as handheld smartphones and tablets. Low power consumption becomes very important in segments, thus High-k (HK)/ metal-gate (MG) process was fabricate DDI products. In this paper, an abnormal leakage increase observed during HTOL will be discussed along with physical mechanism superb results after fixes have been implemented. As result, final product showed excellent reliability through 1500hrs exceeding end life (EOL).
We report a facile and novel method for the selective growth of SiC SiO x nanowires by direct microwave irradiation on Si substrate under atmospheric pressure. Selective synthesis amorphous or crystalline was achieved varying gas composition in reactor. The proposed requires short reaction time (2 min) with no need vacuum equipment because is carried out High-resolution transmission electron microscope images revealed that were crystalline. Raman spectra showed features typical nano-sized...
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Exploring precious metal-free bifunctional electrocatalysts for both the oxygen reduction reaction (ORR) and evolution (OER) is essential practical application of rechargeable Zn-air battery (ZAB). Herein, Ni-doped Co9S8 nanoparticles embedded in a defect-rich N, S co-doped carbon matrix (d-NixCo9-xS8@NSC) are synthesized via facile pyrolysis acid treatment process. The introduction abundant defects metal sulfide provides numerous active sites significantly enhances electrocatalytic...
The graph partitioning problem (GPP) is a representative combinatorial optimization which NP-hard. Currently, various approaches to solve GPP have been introduced. Among these, the solution using evolutionary computation (EC) an effective approach. There has not any survey on research applying EC since 2011. In this survey, we introduce attempts apply made in recent seven years.
This proposes a novel structure of power converter solution on the basis current source type topology for highly capacitively-coupled plasma application system. In overall system, two sources are connected in parallel to generate different output high precision switching intervals. The system consists four major functional blocks; bias generator, modulator, slope and modulator. proposed also employs SiC MOSFET semiconductor switch 1200V/90A order meet fast transient requirement. successfully...