A5076297169- Thin-Film Transistor Technologies
- ZnO doping and properties
- Semiconductor materials and devices
- Quantum Dots Synthesis And Properties
- Organic Electronics and Photovoltaics
- Silicon Nanostructures and Photoluminescence
- Advanced Sensor and Energy Harvesting Materials
- Chalcogenide Semiconductor Thin Films
- Silicon and Solar Cell Technologies
- Transition Metal Oxide Nanomaterials
- Nanomaterials and Printing Technologies
- 2D Materials and Applications
- Nanowire Synthesis and Applications
- Perovskite Materials and Applications
- Nanocluster Synthesis and Applications
- Advanced Memory and Neural Computing
- Ion-surface interactions and analysis
- Semiconductor materials and interfaces
- Organic Light-Emitting Diodes Research
- Molecular Junctions and Nanostructures
- Conducting polymers and applications
- Carbon and Quantum Dots Applications
- CCD and CMOS Imaging Sensors
- Electronic and Structural Properties of Oxides
- Electrowetting and Microfluidic Technologies
Korea Electronics Technology Institute
2015-2024
Jeonbuk National University
2017-2023
Government of the Republic of Korea
2019
Seonam University
2017-2019
Kyonggi University
2016
Kyung Hee University
2016
Yonsei University
1998-2009
Gwangju Institute of Science and Technology
2008
Seoul National University
2005
Kwangju Christian Hospital
2000
Transparent ZnO thin-film transistors (TFTs) with a defect-controlled channel and channel/dielectric interface maintain good photo-stability during device operation. The figure shows cross-sectional view of top-gate ZnO-based transparent TFT/storage capacitor cell structure, connected to front-panel organic-light-emitting-diode pixels operate in bottom emission mode.
Abstract Luminescent solar concentrators (LSCs) have the potential to serve as energy-harvesting windows in buildings. Although recent advances nanotechnology led emergence of novel fluorophores such quantum dots, perovskites and others, commercialization functional glass remains immature due an insufficient power conversion efficiency. In other words, improvements alone cannot fully maximize LSCs. Here we introduce a new laminated type LSC structure where patterned low-refractive-index...
Since the introduction of inorganic ZnO, typically in form nanoparticles (NPs), as an electron transport layer (ETL) material, device performance electrically driven colloidal quantum dot-light-emitting diodes (QLEDs), particular, with either Cd-based II–VI or non-Cd-based III–V (e.g., InP) dot (QD) visible-emitters, has been rapidly improved. In present work, three Zn1–xMgxO (x = 0, 0.05, 0.1) NPs that possess different electronic energy levels are applied ETLs solution-processed,...
We have studied the electrical stability of organic poly-4-vinyl phenol (PVP)/inorganic oxide bilayer gate dielectrics for low-voltage pentacene thin-film transistors (TFTs). Curing conditions spin-cast PVP influence on drain current-gate bias hysteresis behavior; long term curing reduces magnitude hysteresis, which can also be reduced by decreasing thickness. The electron charge injection from electrode plays as another cause hysteresis. These instabilities are categorized into following...
Crack-based strain sensor systems have been known for its high sensitivity, but suffer from the small fracture of thin metal films employed in which results negligible stretchability. Herein, we fabricated a transparent (>90% at 550 nm wavelength), stretchable (up to 100%), and sensitive (gauge factor (GF) 30 100% strain) gauge by depositing an encapsulated crack-induced Ag nanowire (AgNW) network on hydroxylated poly(dimethylsiloxane) (PDMS) film. Stretching AgNWs/PDMS resulted formation...
Because of outstanding optical properties and non‐vacuum solution processability colloidal quantum dot (QD) semiconductors, many researchers have developed various light emitting diodes (LEDs) using QD materials. Until now, the Cd‐based QD‐LEDs shown excellent properties, but eco‐friendly semiconductors attracted attentions due to environmental regulation. And, since there are issues about reliability conventional with organic charge transport layers, a stable layer in conditions must be for...
Anion-exchange membranes (AEMs) with high hydroxide conductivity, strong alkaline stability, and outstanding single-cell performance are in great demand for use fuel cells water electrolyzer applications. In this study, carboxylic acid-functionalized graphene nanofibers (c-GNF) were used as an effective filler to improve the electrochemical physicochemical characteristics of commercial FAA3 anion-exchange membrane fuel-cell (AEMFC) application. The effects c-GNF incorporation on structural,...
Nonvolatile memory ferroelectric thin-film transistors (FeTFT) with P(VDF-TrFE) polymer are demonstrated both n-channel ZnO and p-channel pentacene. A high mobility of ≈1 cm2 V−1 s−1 large window ≈20 V achieved through the organic ferroelectric– inorganic channel hybrid device ZnO-FeTFT. WRITE/ERASE states clearly distinguished by ±20 switching for ZnO- pentacene-FeTFTs.
We report on the fabrication of pentacene-based nonvolatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/trifluoroethylene) ferroelectric gate insulators. Our NVM-TFT adopts flexible polyethersulfone substrate and operates under low voltage write-erase (WR-ER) pulses ±13∼±20 V field effect mobilities 0.1–0.18 cm2/V s, depending polymer thickness. displays good window (ΔV) 2.5–8 also exhibits WR-ER current ratio 20–40. The retention properties persist over ∼10...
Direct quantitative mapping of the density-of-states, named photo-excited charge-collection technique, for interface traps at n-ZnO and/or p-pentacene thin-film transistor channel is implemented by using monochromatic photons which are carried optical fibers and probed onto transistors.
The authors report on the fabrication of a top-gate ZnO thin-film transistor (TFT) with polymer dielectric/ferroelectric double-layer gate insulator that was formed patterned through sequential spin-casting process 450-nm-thick poly-4-vinylphenol (PVP) and 200-nm-thick poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]. Compared to single P(VDF/TrFE) layer, double layer shows remarkably reduced leakage current aid PVP buffer. TFT PVP/P(VDF/TrFE) exhibits field effect mobility...
Authors report the fabrication of heterostructure diode adopting p -Ni 0.8 Cu 0.2 WO 4 oxide/ n -Si junction, and its demonstration toward high speed rectifier circuit upto 1 MHz. Newly developed -type Cu-doped NiWO was synthesized by...
The authors report on the fabrication of complementary thin-film transistor (CTFT) inverters with pentacene (p type) and ZnO (n hybrid channels rf-deposited AlOx dielectrics. All deposition processes were carried out glass substrates at low temperatures (<100°C). Since our p-channel TFT showed somewhat equivalent field mobility 0.11cm2∕Vs compared to that n-channel device (0.75cm2∕Vs), CTFT designed identical dimensions for both channels. demonstrated an excellent voltage gain ∼21 a...
We report on high-performance ink-jet-printed amorphous zinc-tin-oxide (a-ZTO) thin-film transistors (TFTs) and simple inverter circuits. The solution-processed a-ZTO layer was directly printed source/drain electrodes then thermally treated by using rapid thermal annealing process. TFTs (W/L = 100 μm/10 μm) have shown a carrier mobility of 4.98 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V · s with an on/off current ratio that is...
Thiocyanate (SCN)-treated lead sulfide (PbS) quantum dot thin-film-transistors (QD TFTs) and CMOS-compatible circuits were fabricated on a flexible substrate via scalable photolithography process. Spectroscopic electrical investigations demonstrated that the thermal treatments induce ligand decomposition densification of QD arrays at around 170 °C. High temperature annealing above 200 °C induces an aggregation particles, resulting in degradation device performance, such as field-effect...
An ultrathin, transparent and stretch-compatible (up to 100% strain) pressure sensitive capacitor was achieved by developing a novel photo-induced patterning of silver nanowire networks deposited on 1.4 μm thick polyethylene terephthalate sheet.
Color-selective or wavelength-tunable capability is a crucial feature for two-dimensional (2-D) semiconducting material-based image sensor applications. Here, we report on flexible and wavelength-selective molybdenum disulfide (MoS2) phototransistors using monolithically integrated transmission Fabry-Perot (F-P) cavity filters. The fabricated multilayer MoS2 polyarylate substrate exhibit decent electrical characteristics (μFE > 64.4 cm2/Vs, on/off ratio 106), the F-P filters, being able to...
The authors report on the fabrication of rubrene organic thin-film transistors (OTFTs) with crystalline and amorphous channels, which were achieved by patterning a thin film deposited under specific condition. was mostly covered matrix smooth surface except many disks embedded rough surface. When channel OTFT covers some portion disks, displayed typical field effect behavior while it showed little drain current background. Typical mobility obtained from 1.23×10−4cm2∕Vs an on/off ratio ∼103.
We report on the fabrication of top-gate ZnO thin-film transistors (TFTs) with organic and inorganic nanohybrid dielectric layers that take superlattice form in their inside structure. The dielectrics were prepared by alternate deposition self-assembled monolayer oxide sputter-deposited channel. With a 22-nm-thin AlOx-based hybrid layer (∼130nFcm2), our TFT showed field mobility 0.36cm2Vs operating at 8V, while increased up to 0.66cm2Vs AlOx-based/TiOx-based/AlOx-based (5.5nm11nm5.5nm...
We report on the fabrication of complementary inverters that have ZnO and pentacene as n-type p-type channels a polyethersulfone substrate operating under 7V. Patterned Al AlOx thin film were deposited at room temperature plastic common gate electrode dielectric, respectively. After initial instability between channel dielectric was controlled, our thin-film transistors (TFTs) displayed quite similar drain current level to TFTs. Our flexible device showed much high voltage gain ∼100 even...
We report on the fabrication of gate-stable ZnO thin-film transistors (TFTs) with aluminum oxide dielectric. When an off-stoichiometric was deposited at room temperature, ZnO-TFT revealed unreliable transfer characteristics: a large drain current-gate bias hysteresis and amount threshold voltage shift under gate-bias stress. As rapid thermal annealing (RTA) in ambient applied onto prior to channel deposition, reliability device improved. The RTA might cause our surface be more stoichiometric...