A5060246416- Ga2O3 and related materials
- 2D Materials and Applications
- ZnO doping and properties
- Electronic and Structural Properties of Oxides
- Ferroelectric and Negative Capacitance Devices
- Nanowire Synthesis and Applications
- Advanced Memory and Neural Computing
- MXene and MAX Phase Materials
- Perovskite Materials and Applications
- Nuclear physics research studies
- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Advanced Sensor and Energy Harvesting Materials
- Atomic and Molecular Physics
- Silicon Nanostructures and Photoluminescence
- Quantum Chromodynamics and Particle Interactions
- Astronomical and nuclear sciences
- Gas Sensing Nanomaterials and Sensors
- Advanced Photocatalysis Techniques
- Conducting polymers and applications
- CCD and CMOS Imaging Sensors
- Transition Metal Oxide Nanomaterials
- Neural Networks and Reservoir Computing
- Acoustic Wave Resonator Technologies
Soongsil University
2016-2025
Seoul National University
2024
ORCID
2018
Korea Electronics Technology Institute
2015-2016
Kyonggi University
2016
Kyung Hee University
2016
Samsung (South Korea)
2014
University of Michigan–Ann Arbor
1996-2010
National Superconducting Cyclotron Laboratory
1990-2000
Michigan State University
1989-2000
Hysteresis, which is induced by both extrinsic and intrinsic causes, often observed in molybdenum disulphide (MoS2) field-effect transistors (FETs), several hysteresis effects have been reported unpassivated bottom-gate MoS2 device structures. In this study, interface-trap-induced other electrical properties are examined. We experimentally investigate thermally activated trap charges near a silicon-dioxide (SiO2)-MoS2 interface that gives rise to multilayer FET temperature region of 10–300...
Multispectral photodetectors are emerging devices capable of detecting photons in multiple wavelength ranges, such as visible (VIS), near infrared (NIR), etc. Image data acquired with these can be used for effective object identification and navigations owing to additional information beyond human vision, including thermal image night vision. However, capabilities hindered by the structural complexity arising from integration heterojunctions selective absorbers. In this paper, we demonstrate...
Deep-ultraviolet (DUV) photodetectors based on wide-band-gap semiconductors have attracted significant interest across a wide range of applications in the industrial, biological, environmental, and military fields due to their solar-blind nature. As one most promising materials, β-Ga2O3 provides great application potential over detection wavelengths ranging from 230 280 nm owing its superior optoelectronic performance, stability, compatibility with conventional fabrication techniques....
Significant effort for demonstrating a gallium nitride (GaN)-based ferroelectric metal-oxide-semiconductor (MOS)-high-electron-mobility transistor (HEMT) reconfigurable operation via simple pulse has been hindered by the lack of suitable materials, gate structures, and intrinsic depolarization effects. In this study, we have demonstrated artificial synapses using GaN-based MOS-HEMT integrated with an α-In2Se3 semiconductor. The van der Waals heterostructure GaN/α-In2Se3 provides potential to...
Molybdenum disulfide (MoS2) field-effect transistor (FET)-based biosensors have attracted significant attention as promising candidates for highly sensitive, label-free biomolecule detection devices. In this paper, toward practical applications of biosensors, we demonstrate reliable and quantitative a prostate cancer biomarker using the MoS2 FET biosensor in nonaqueous environment by reducing nonspecific molecular binding events realizing uniform chemisorption anti-PSA onto surface. A...
Abstract Van der Waals (vdW) 2D/3D heterostructures are extensively studied for high‐performance photodetector applications. Until now, the type of 2D materials has been primary area interest rather than design 3D semiconductors. In this study, high‐speed broadband photodiodes (PDs) based on vdW p‐WSe 2 /n‐Ge heterojunctions reported, and performance compared with different n‐Ge regions formed via ion‐implantation process. The fabricated PD a typical long region low doping concentration...
In this study, we demonstrate ferroelectric GaN high-electron mobility transistors (HEMTs) with a sputtered AlScN gate dielectric, exhibiting large memory window of ~ 14.6 V and high on/off ratio <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim ~10^{{8}}$ </tex-math></inline-formula> . The strong polarization layer contributes to the remarkably threshold voltage ( notation="LaTeX">$\text{V}_{\text...
Among various polymorphic phases of gallium oxide (Ga2O3), α-phase Ga2O3 has clear advantages such as its heteroepitaxial growth well wide bandgap, which is promising for use in power devices. In this work, we demonstrate α-Ga2O3 MOSFETs with hybrid Schottky drain (HSD) contact, comprising both Ohmic and electrode regions. comparison conventional (OD) a lower on-resistance (Ron) 2.1 kΩ mm achieved variable channel lengths. Physics-based TCAD simulation performed to validate the turn-on...
Abstract Recent advances in mass transfer technology are expected to bring next‐generation micro light‐emitting diodes (µLED) displays into reality, although reliable integration of the active‐matrix backplane with transferred µLEDs remains as a challenge. Here, µLED display is innovated by demonstrating pixel circuit‐integrated micro‐LEDs (PIMLEDs) and integrating them onto transparent glass substrate. The PIMLED comprises low‐temperature poly‐silicon transistors GaN µLED. square‐shaped...
Abstract Advances in semiconductor technology have been primarily driven by exponentially reducing the size of silicon transistors and pushing quantum limit. However, continued scaling becomes extremely difficult accordance with Moore's law. Conversely, recent advances monolithic heterogeneous integration exploring non‐group IV materials envision beyond CMOS scaling. This study entails development scalable van der Waals (vdW) using all back‐end‐of‐line‐compatible processes: vertical 3D...
We propose nano-crystalline diamond (NCD) as a heteroepitaxial substrate for beta-gallium oxide (β-Ga2O3), and investigate self-heating effect in β-Ga2O3 MOSFET on the NCD compared with native Ga2O3 other alternative (SiC) using physics-based TCAD simulation. The high thermal conductivity reduces lattice temperature of thus mitigates drain current degradation. Furthermore, benefits become more pronounced device scaling. These results suggest that low-cost can be promising devices applications.
Abstract The ultra‐wide bandgap and cost‐effective melt‐growth of β‐Ga 2 O 3 ensure its advantages over other wide materials, competitive electrical performance has been demonstrated in various device structures. In this paper, an asymmetric double‐gate (ADG) nanomembrane field‐effect transistor (FET) comprised a bottom‐gate (BG) metal‐oxide top‐gate (TG) metal‐semiconductor (MESFET) is demonstrated. Schottky contact properties are validated by characterizing the lateral barrier diode (SBD),...
Abstract Highly sensitive and system integrable gas sensors play a significant role in industry daily life, MoS 2 has emerged as one of the most promising two-dimensional nanomaterials for sensor technology. In this study, we demonstrate scalable monolithically integrated active-matrix array based on large-area bilayer films synthesized via two-successive steps: radio-frequency magnetron sputtering thermal sulfurization. The fabricated thin-film transistors exhibit consistent electrical...
Microdonut-shaped GaN/InxGa1−xN light-emitting diode (LED) microarrays are fabricated for variable-color emitters. The figure shows clearly donut-shaped light emission from all the individual microdonut LEDs. Furthermore, LEDs exhibit spatially-resolved blue and green EL colors, which can be tuned by either controlling external bias voltage or changing size of LED.
Color-selective or wavelength-tunable capability is a crucial feature for two-dimensional (2-D) semiconducting material-based image sensor applications. Here, we report on flexible and wavelength-selective molybdenum disulfide (MoS2) phototransistors using monolithically integrated transmission Fabry-Perot (F-P) cavity filters. The fabricated multilayer MoS2 polyarylate substrate exhibit decent electrical characteristics (μFE > 64.4 cm2/Vs, on/off ratio 106), the F-P filters, being able to...
Abstract Heterogeneous integration of dissimilar crystalline materials has recently attracted considerable attention due to its potential for high-performance multifunctional electronic and photonic devices. The conventional method fabricating heterostructures is by heteroepitaxy, in which epitaxy performed on crystallographically different materials. However, epitaxial limitations monolithic growth prevent implementation high quality heterostructures, such as complex-oxides semiconductor...
The cross sections for elastic scattering of 318 MeV $^{6}\mathrm{Li}$ from $^{12}\mathrm{C}$ and $^{28}\mathrm{Si}$ were measured. data extend well beyond the rainbow angle into region where far-side dominates, thus define unique phenomenological potentials. These complement earlier potentials derived at an energy 210 MeV. Double-folded real also generated using effective nucleon-nucleon interactions. M3Y Franey-Love 50 interactions gave similar A Woods-Saxon form was used imaginary...
We demonstrate low subthreshold swing (SS) double-gate (DG) β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> field-effect transistors (FETs) with polycrystalline hafnium oxide (HfO2) gate dielectrics. The atomic layer deposited HfO at an elevated temperature of 350 °C without post-deposition annealing has a structure. threshold voltage is modulated from depletionto enhancement-mode...