The conversion of body heat into electrical energy using a thermoelectric (TE) power generator is useful for wearable self-powered mobile electronic systems such as medical sensors or smart watches. We herein demonstrate glass fabric-based flexible TE screen printing technique and the self-sustaining structure device without top bottom substrates. With this it possible to make thin (∼500 μm), lightweight (∼0.13 g cm−2), flexible. In addition, developed achieved an unprecedentedly large...

There has been strong demand for novel nonvolatile memory technology low-cost, large-area, and low-power flexible electronics applications. Resistive memories based on metal oxide thin films have extensively studied application as next-generation devices. However, although the resistive several advantages, such good scalability, consumption, fast switching speed, their to large-area substrates limited due material characteristics necessity of a high-temperature fabrication process. As...

Direct measurement of the adhesion energy monolayer graphene as-grown on metal substrates is important to better understand its bonding mechanism and control mechanical release from substrates, but it has not been reported yet. We report large-area synthesized copper measured by double cantilever beam fracture mechanics testing. The 0.72 ± 0.07 J m–2 was found. Knowing directly value, we further demonstrate etching-free renewable transfer process that utilizes repetition delamination...

Although the work function of graphene under a given metal electrode is critical information for realization high-performance graphene-based electronic devices, relatively little relevant research has been carried out to date. In this work, values various metals are accurately measured first time through detailed analysis capacitance-voltage (C-V) characteristics metal-graphene-oxide-semiconductor (MGOS) capacitor structure. contrast high exposed 4.89-5.16 eV, varies depending on species....

A self-powered wearable electrocardiography (ECG) system is demonstrated. The ECG sensing circuit was fabricated on a flexible PCB and powered by thermoelectric generator (w-TEG) using body heat as the energy source. To allow TEG to obtain large temperature difference for high power generation also be wearable, polymer-based sink (PHS) comprised of superabsorbent polymer (SAP) fiber that promotes liquid evaporation devised. Parametric studies PHS were conducted, structure w-TEG optimized...

Flexible thermoelectric generators (f-TEGs) are emerging as a semipermanent power source for self-powered sensors, which is an important area of research next-generation smart network monitoring systems in the Internet-of-things era. We report this paper f-TEG produced by screen-printing technique (SPT) and laser multiscanning (LMS) lift-off process. A screen-printed TEG was fabricated on SiO2/a-Si/quartz substrate via SPT process, LMS process completely separated rigid quartz from original...

We report the first experimental results on electromagnetic interference (EMI) shielding effectiveness (SE) of monolayer graphene. The CVD graphene has an average SE value 2.27 dB, corresponding to ∼40% incident waves. shows more than seven times (in terms dB) greater gold film. dominant mechanism is absorption rather reflection, and portion decreases with increase in number layers. Our modeling work that plane-wave theory for metal also applicable model predicts ideal can shield as much...

Layered structures of transition metal dichalcogenides stacked by van der Waals interactions are now attracting the attention many researchers because they have fascinating electronic, optical, thermoelectric, and catalytic properties emerging at monolayer limit. However, commonly used methods for preparing monolayers limitations low yield poor extendibility into large-area applications. Herein, we demonstrate synthesis MoSe2 with high quality uniformity selenization MoO3 via chemical vapor...

A resistive switching memory device based on graphene oxide (GO) is presented. It found that the characteristic has a strong dependence electrode material and GO thickness. In our experiment, an Al/GO/ITO structure with 30-nm-thick shows good performance on/off resistance ratio of <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\hbox{10}^{3}$</tex></formula> , low set/reset voltage, excellent data...

Recently, a flexible resistive switching memory device using graphene oxide was successfully demonstrated. In this work, the new findings on mechanism of are presented through comprehensive study phenomena. It has been found that operation (RRAM) is governed by dual oxygen migration and Al diffusion. However, diffusion into main factor to determine endurance property which limits long term lifetime device. The electrode dependence RRAM analyzed as well attributed difference in surface...

Metal-oxide-semiconductor capacitors were fabricated on germanium substrates by using metalorganic-chemical-vapor-deposited HfO2 as the dielectric and TaN metal gate electrode. It is demonstrated that a surface annealing step in NH3 ambient before deposition could result significant improvement both leakage current equivalent oxide thickness (EOT). was possible to achieve capacitor with an EOT of 10.5 Å 5.02×10−5 A/cm2 at 1 V bias. X-ray photoelectron spectroscopy analysis indicates...

Metal-insulator-metal (MIM) capacitors with different HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> thickness have been investigated. The results show that both the capacitance density and voltage coefficients of (VCCs) increase decreasing thickness. In addition, it is found VCCs decrease logarithmically increasing Furthermore, MIM capacitor 10-nm shows a record high 13 fF/μm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>...

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> In this paper, electrical and interfacial properties of MOS capacitors with atomic layer deposited (ALD) <formula formulatype="inline"><tex>$\hbox{Al}_{2}\hbox{O}_{3}$</tex></formula>, formulatype="inline"><tex>$ \hbox{HfO}_{2}$</tex></formula>, HfAlO gate dielectrics on sulfur-passivated (S-passivated) GaAs substrates were investigated. p-type has shown superior over formulatype="inline"><tex>...

The charge storage and program/erase mechanisms in polysilicon-oxide-nitride-oxide-silicon (SONOS) memory structures with charge-storage layers of different materials are investigated this paper. In particular, the use a HfAlO layer SONOS-type structure is proposed. Compared to other high-/spl kappa/ layers, has advantage high-speed HfO/sub 2/ as well good charge-retention time Al/sub 2/O/sub 3/, which makes promising candidate for memory. 3/ compositions blocking-oxide also investigated.

Solution-processable, isolated graphene oxide (GO) monolayers have been used as a charge trapping dielectric in TaN gate/Al2O3/isolated GO sheets/SiO2/p-Si memory device (TANOS). The TANOS type structure serves with the threshold voltage controlled by amount of trapped sheet. Capacitance-Voltage hysteresis curves reveal 7.5 V window using sweep −5–14 V. Thermal reduction to reduces 1.4 unique properties points potential applications flexible organic devices.

We report an alternative approach to lower contact resistance and extend charge transfer length by forming graphene antidot arrays under metal electrode introduce edge of graphene. The resistivity ∼2.2 × 10−9 Ω·cm2 is experimentally estimated, based on the experiment one-dimensional equivalent circuit model, result agrees well with previous theoretical report. proposed module structure can open ways overcome poor performance current crowding effect at metal-graphene contact.

A junctionless-accumulation-mode (JAM) p-channel MOSFET is successfully implemented based on a junction-isolated bulk FinFET for the first time. The JAM devices with fin width of 16 nm show outstanding transfer characteristics: 1) subthreshold swing (SS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">min</sub> ) = 68 mV/dec; 2) drain-induced-barrier-lowering 9 mV/V; and 3) I xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> /I...

Abstract Thermal perception is essential for the survival and daily activities of people. Thus, it desirable to realize thermal feedback stimulation improving sense realism in virtual reality (VR) users. For stimulus, conventional systems utilize liquid circulation with bulky external sources or thermoelectric devices (TEDs) on rigid structures. However, these are difficult apply compact wearable gear used complex hand motions interact VR. Furthermore, generating a rapid temperature...